TfiS SEMICONDUCTOR GROUP
Abstract: MSM514400 MSM514400-10 S4240 24B4G
Text: 4b E D • b7S4240 O K I QODTbDS TfiS B O K I J SEMICONDUCTOR M S M 5 1 4 4 0 0 7 - GROUP V * - 2 3 1,048,576-WORD X 4-BIT DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 5 1 4 4 0 0 isa new generation dynamic R A M organized as 1,048,576 w ords by 4 bits.
|
OCR Scan
|
PDF
|
b724240
MSM514400
576-WORD
MSM514400isa
26-pin
20-pin
msm5144oo-
b75424Q
TfiS SEMICONDUCTOR GROUP
MSM514400-10
S4240
24B4G
|
MSC23409C
Abstract: No abstract text available
Text: O K I Sem icon d u ctor M SC 23409C /C L -X X D S9 4,194,304-Word x 9-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI M SC23409C/CL-xxDS9 is a fully decoded 4,194,304-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs 4M x 1 in SOJ packages
|
OCR Scan
|
PDF
|
MSC23409C/CL-XXDS9
304-Word
MSC23409C
30-pin
|
AA 170 circit diagram
Abstract: 256KX16 MSM5416256 ucas zip
Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY
|
OCR Scan
|
PDF
|
MSM5416256/MSM54V16256
MSM5416256
256KX16
MSM54
DQ8-15
b72M2M0
b7S424D
AA 170 circit diagram
MSM5416256 ucas zip
|
ST 27C1000
Abstract: No abstract text available
Text: O K I Semiconductor MSM6690 RO M Interface LSI DESCRIPTIO N The MSM6690 is a LSI capable of driving 3 devices of 131,072 x 8 bit EPROM or MASKROM. m VDD SADX H SADY I SÄSX 38 ] S Ä S Y DOUT | T T ESTO 1 Ö L The MSM6690 is provided with a built-in internal
|
OCR Scan
|
PDF
|
MSM6690
MSM6690
MSM6690,
MSM6388
MSM6588)
MSM6389,
MSM6587
MSM6586)
fix23Y1018
ST 27C1000
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S
|
OCR Scan
|
PDF
|
MSM38S0000/MSM98S000
MSM38S
MSM98S
16-Mbit
38S/98S
44x44
35x35
28x28
33x33
38x38
|
ms1250
Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
Text: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith
|
OCR Scan
|
PDF
|
MSM6652-XXX/MSM6653-XXX/
MSM6654-XXX/MSM6655-XXX/
MSM6656-XXX_
MSM6650
MSM6375
12bit
-40dB
00MSA/MSK/
00MHz,
AR76-202
ms1250
SUNNY
eprom 6653
ln 258
oki voice synthesizer msm6375
Sunny Oscillators
MSM6653
MSM6656-XXX
10FFE
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511000H_ 1,048,576-Word x 1-Bit DYN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power
|
OCR Scan
|
PDF
|
MSM511000H
576-Word
MSM511000H
18-pin
26/20-pin
20-pin
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM51V17400
304-Word
MSM51V17400
2048cycles/32ms
A0-A10
|
CATVs
Abstract: OL327L S43 diodes DFB ea OL327B
Text: O K I electronic com ponents OL327B, OL327L 1.3 |am DFB Laser Diode GENERAL DESCRIPTION The OL327B and OL327L are 1.3 |im, InGaAsP/InP DFB laser diodes for optical communication systems. FEATURES • • • Longitudinal single-m ode operation High speed Compact packages: <| 5.6mm
|
OCR Scan
|
PDF
|
OL327B,
OL327L
OL327B
OL327L
b7S4240
D022430
CATVs
S43 diodes
DFB ea
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M S C 2 3 1 0 8 C /C L -X X P S 2 1,048,576-Word x 8-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23108C/CL-xxDS2 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs 1M x 4 in SOJ packages
|
OCR Scan
|
PDF
|
MSC23108C/CL-XXPS2
576-Word
MSC23108C/CL-xxDS2
30-pin
MSC23108C/CL-xxDS2
b7242M0
|
Untitled
Abstract: No abstract text available
Text: O K I electronic components KGF2702_ Wide-Band Amplifier for Microwave UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF2702, housed in an 8-pin SOP plastic package, is a tw o-stage am plifier that features flat and high gain over a w ide range of frequencies, internal inpu t and output m atching, and high
|
OCR Scan
|
PDF
|
KGF2702_
KGF2702,
KGF2702
KGF2702
b724240
0022fl5b
0022A57
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 14260A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514260A /A SL is a new generation D ynam ic RA M organized a s 262,144-w ord x 16-bit configuration. The technology u sed to fabricate the M SM 514260A /A SL is OKI's C M O S silicon gate process
|
OCR Scan
|
PDF
|
4260A/ASL
144-Word
16-Bit
14260A
144-w
16-bit
144-word
cycles/128m
|
OP125
Abstract: OD125
Text: OKI electronic com ponents O P 125 _ InGaAs PIN Photodiode for Optical Communications GEN ERAL DESCRIPTION The OD125 is designed as a receiver AMP for 30-Mbit digital signals. It features a PIN photodiode and AMP built into a TO-18 metal package.
|
OCR Scan
|
PDF
|
OP125_
OD125
30-Mbit
30MHz
1300nm
b7E424G
OD125
b75424D
b72424Q
OP125
|
photo sensor pin diagram
Abstract: paper sensor cd photo detector "Photo Interrupter" bar code phototransistor PHOTO SENSOR of application OC808 IR SENSOR pin configuration QC808 3 pin IR sensor pin connection
Text: OKI electronic components OC808 Reflector-Type Photo Interrupter GENERAL DESCRIPTION The OC 8O8 is a reflector-type photo interrupter that contains a high-output infrared light-emitting diode and high-sensitivity phototransistor. FEATURES • High output • Compact, capable of reading 0.5 mm bar codes
|
OCR Scan
|
PDF
|
QC808_
b724240
OC808
b7S4240
L724240
photo sensor pin diagram
paper sensor
cd photo detector
"Photo Interrupter"
bar code phototransistor
PHOTO SENSOR of application
OC808
IR SENSOR pin configuration
QC808
3 pin IR sensor pin connection
|
|
|
Untitled
Abstract: No abstract text available
Text: O K I Sem iconductor M SM6650 External ROM Drive Speech Synthesis LSI GENERAL DESCRIPTION MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the
|
OCR Scan
|
PDF
|
SM6650
MSM6650,
MSM6376
12-bit
MSM6650
MSM6650
|
20-PIN
Abstract: 26-PIN ZIP20-P-400-W1
Text: O K I Sem iconductor MSM5 14 4 0 0 A/AL 1,048,576-W ord x 4 -B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION c v -siu v iu s silicon gate proce The device operates at a single 5V power supply. Its I/O pins are TTL compatible. FEATURES
|
OCR Scan
|
PDF
|
MSM514400A/AL_
576-Word
MSM514400A/AL
cycles/16ms,
cycles/128ms
MSM514400A/AL
20-PIN
26-PIN
ZIP20-P-400-W1
|
M7602
Abstract: QG21112 ECHO canceller IC MSM7602 MSM7602-001 MSM7602-001GS-K MSM7602-001TS-K 28pin echo IC 3.3 echo amplifier IC 28pin
Text: GENERAL DESCRIPTION The MSM7602 is an im proved version of the MSM7520 w ith the same basic configuration. The MSM7602 uses a 19.2 M Hz clock frequency to m eet PHS, the 3 V pow er supply 2.7 V to 5.5 V , and compact packaging. Also, this device adds the how ling detecter control pins and m ain cleek
|
OCR Scan
|
PDF
|
MSM7602
MSM7520
MSM7602-001
002TS-K
b724240
MSM7602
M7602
QG21112
ECHO canceller IC
MSM7602-001GS-K
MSM7602-001TS-K
28pin echo IC 3.3
echo amplifier IC 28pin
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6788 SBC SOLID-STATE RECORDER LSI GENERAL DESCRIPTION The MSM6788 is a solid-state-recorder developed using the Sub Band Coding SBC method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and dedicated DRAM
|
OCR Scan
|
PDF
|
MSM6788
MSM6788
MSM6791
b724240
MSM6791,
|
Bv 42 transistor
Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
Text: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM51V17190_
576-Word
18-Bit
MSM51V17190
cycles/32ms
Bv 42 transistor
CI 576
tsop50
42-PIN
MSM51V17190-70
MSM51V17190-80
oki Package SOJ
Scans-0053100
|