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    600S5R6 Price and Stock

    Kyocera AVX Components 600S5R6BT250XT

    CAP CER 5.6PF 250V C0G/NP0 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 600S5R6BT250XT Digi-Reel 14,179 1
    • 1 $1.98
    • 10 $1.268
    • 100 $0.889
    • 1000 $0.68745
    • 10000 $0.68745
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    600S5R6BT250XT Cut Tape 14,179 1
    • 1 $1.98
    • 10 $1.268
    • 100 $0.889
    • 1000 $0.68745
    • 10000 $0.68745
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    600S5R6BT250XT Reel 12,000 4,000
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    • 10000 $0.58749
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    Avnet Americas 600S5R6BT250XT Reel 12 Weeks 500
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    Mouser Electronics 600S5R6BT250XT 3,906
    • 1 $1.08
    • 10 $0.801
    • 100 $0.571
    • 1000 $0.545
    • 10000 $0.5
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    TTI 600S5R6BT250XT Reel 1,000 500
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    • 1000 $0.539
    • 10000 $0.5
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    Richardson RFPD 600S5R6BT250XT 2,500 1,000
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    • 1000 $0.48
    • 10000 $0.3
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    600S5R6BT250XT 5 1,000
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    • 1000 $0.48
    • 10000 $0.3
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    600S5R6BT250XT 1,000
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    • 1000 $0.48
    • 10000 $0.3
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    Kyocera AVX Components 600S5R6AT250XT

    CAP CER 5.6PF 250V C0G/NP0 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 600S5R6AT250XT Cut Tape 10,682 1
    • 1 $2.96
    • 10 $1.933
    • 100 $1.3886
    • 1000 $1.09825
    • 10000 $1.09825
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    600S5R6AT250XT Digi-Reel 10,682 1
    • 1 $2.96
    • 10 $1.933
    • 100 $1.3886
    • 1000 $1.09825
    • 10000 $1.09825
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    600S5R6AT250XT Reel 8,000 4,000
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    • 10000 $0.95416
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    Avnet Americas 600S5R6AT250XT Reel 12 Weeks 2,000
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    Mouser Electronics 600S5R6AT250XT 10,571
    • 1 $1.92
    • 10 $1.34
    • 100 $1.03
    • 1000 $0.89
    • 10000 $0.62
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    Arrow Electronics 600S5R6AT250XT 2,000 12 Weeks 2,000
    • 1 -
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    • 1000 -
    • 10000 $0.8903
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    Richardson RFPD 600S5R6AT250XT 500
    • 1 -
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    • 1000 $0.8
    • 10000 $0.53
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    Kyocera AVX Components 600S5R6BW250XT

    CAP CER 5.6PF 250V C0G/NP0 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 600S5R6BW250XT Cut Tape 10,376 1
    • 1 $0.86
    • 10 $0.537
    • 100 $0.3658
    • 1000 $0.29364
    • 10000 $0.29364
    		Buy Now
    600S5R6BW250XT Digi-Reel 10,376 1
    • 1 $0.86
    • 10 $0.537
    • 100 $0.3658
    • 1000 $0.29364
    • 10000 $0.29364
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    600S5R6BW250XT Reel 4,000 4,000
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    • 10000 $0.29364
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    Avnet Americas 600S5R6BW250XT Reel 12 Weeks 500
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    Mouser Electronics 600S5R6BW250XT 1,168
    • 1 $0.83
    • 10 $0.471
    • 100 $0.471
    • 1000 $0.471
    • 10000 $0.294
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    TTI 600S5R6BW250XT Reel 2,000 500
    • 1 -
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    • 1000 $0.472
    • 10000 $0.294
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    Kyocera AVX Components 600S5R6CT250XT

    CAP CER 5.6PF 250V C0G/NP0 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 600S5R6CT250XT Digi-Reel 5,849 1
    • 1 $1.44
    • 10 $0.902
    • 100 $0.6203
    • 1000 $0.47029
    • 10000 $0.47029
    		Buy Now
    600S5R6CT250XT Cut Tape 5,849 1
    • 1 $1.44
    • 10 $0.902
    • 100 $0.6203
    • 1000 $0.47029
    • 10000 $0.47029
    		Buy Now
    600S5R6CT250XT Reel 4,000 4,000
    • 1 -
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    • 1000 -
    • 10000 $0.39595
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    Avnet Americas 600S5R6CT250XT Reel 12 Weeks 2,000
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    Mouser Electronics 600S5R6CT250XT 11,386
    • 1 $0.94
    • 10 $0.623
    • 100 $0.451
    • 1000 $0.403
    • 10000 $0.334
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    TTI 600S5R6CT250XT Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.399
    • 10000 $0.331
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    Kyocera AVX Components 600S5R6CW250XT

    CAP CER 5.6PF 250V NP0 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 600S5R6CW250XT Reel 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.43523
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    Mouser Electronics 600S5R6CW250XT 900
    • 1 $1.08
    • 10 $0.811
    • 100 $0.606
    • 1000 $0.426
    • 10000 $0.394
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    Richardson RFPD 600S5R6CW250XT 1,000
    • 1 -
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    • 100 -
    • 1000 $0.34
    • 10000 $0.21
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    Find more 600S5R6 price and stock on Findchips.com

    600S5R6 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    600S5R6AT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603 Original PDF
    600S5R6AW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603 Original PDF
    600S5R6BT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603 Original PDF
    600S5R6BW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603 Original PDF
    600S5R6CT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603 Original PDF
    600S5R6CW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603 Original PDF

    600S5R6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FL TGF2819-FL

    NE552R479A

    Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.


    Original     		PDF NE552R479A NE552R479A mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency

    mch215f104zp

    Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz


    Original     		PDF NE552R479A NE552R479A 100mA 300mA mch215f104zp J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110

    DCS1800

    Abstract: NE5520279A NE5520279A-T1
    Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15


    Original     		PDF NE5520279A 0X001 NE5520279A HS350-P3 DCS1800 NE5520279A-T1

    Untitled

    Abstract: No abstract text available
    Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366

    SOF-26

    Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 SOF-26 SZP-5026 5.7Ghz low noise amplifier 600S4R7

    Untitled

    Abstract: No abstract text available
    Text: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4004532-FS T1G4004532-FS TQGaN25

    600S4R7

    Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SZP-5026Z SOF-26 DS110620 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 600S4R7 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 600S5R6 600S4R7cw250

    MCH18

    Abstract: ZO13 0805HQ-5N6XJBB
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110 MCH18 ZO13 0805HQ-5N6XJBB

    SZP-5026-HWD

    Abstract: No abstract text available
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SZP-5026Z SOF-26 DS111220 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 SZP-5026-HWD

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA CH185A1R8DK MCH182CN104K

    Untitled

    Abstract: No abstract text available
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z DS111220 SZP5026ZSQ SZP5026ZSR SZP5026Z 15GHz

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FL T1G4020036-FL

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA MCH182CN104K 600S4R7CW250

    mch215f104zp

    Abstract: mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A ATC0603
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz


    Original     		PDF NE552R479A NE552R479A HS350-P3 mch215f104zp mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A-T1A ATC0603

    SZP-5026

    Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP5026Z SZP5026Z-EVB1 SZP5026Z-EVB2 15GHz 35GHz DS091202 SZP-5026 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 MLCC rework recommended land pattern for 0402 cap e483

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FL T1G4020036-FL

    DCS1800

    Abstract: NE5520279A NE5520279A-T1-A
    Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V Gate 1.2 MAX.


    Original     		PDF NE5520279A 0X001 NE5520279A DCS1800 NE5520279A-T1-A

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FS TGF2819-FS

    CAP, 0603 4.7pF

    Abstract: SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 SZP-5026Z 600S5
    Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar


    Original     		PDF SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 CAP, 0603 4.7pF SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 600S5