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    600S4R7CW250 Search Results

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    600S4R7CW250 Price and Stock

    Kyocera AVX Components 600S4R7CW250XT

    Silicon RF Capacitors / Thin Film 250volts 4.7pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 600S4R7CW250XT 667
    • 1 $1.04
    • 10 $0.752
    • 100 $0.536
    • 1000 $0.377
    • 10000 $0.317
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    Richardson RFPD 600S4R7CW250XT 1,500
    • 1 -
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    • 10000 $0.17
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    Kyocera AVX Components 600S4R7CW250T

    Silicon RF Capacitors / Thin Film 250V 4.7pF Tol 0.25pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 600S4R7CW250T
    • 1 $1.04
    • 10 $0.752
    • 100 $0.536
    • 1000 $0.377
    • 10000 $0.317
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    600S4R7CW250 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,


    Original     		RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110 PDF

    Untitled

    Abstract: No abstract text available
    Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar


    Original     		SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 PDF

    SOF-26

    Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 SOF-26 SZP-5026 5.7Ghz low noise amplifier 600S4R7 PDF

    600S4R7

    Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		SZP-5026Z SZP-5026Z SOF-26 DS110620 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 600S4R7 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 600S5R6 600S4R7cw250 PDF

    MCH18

    Abstract: ZO13 0805HQ-5N6XJBB
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110 MCH18 ZO13 0805HQ-5N6XJBB PDF

    SZP-5026-HWD

    Abstract: No abstract text available
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		SZP-5026Z SZP-5026Z SOF-26 DS111220 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 SZP-5026-HWD PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA CH185A1R8DK MCH182CN104K PDF

    Untitled

    Abstract: No abstract text available
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		SZP-5026Z SOF-26 SZP-5026Z DS111220 SZP5026ZSQ SZP5026ZSR SZP5026Z 15GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA MCH182CN104K 600S4R7CW250 PDF

    SZP-5026

    Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
    Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


    Original     		SZP-5026Z SOF-26 SZP-5026Z SZP5026Z SZP5026Z-EVB1 SZP5026Z-EVB2 15GHz 35GHz DS091202 SZP-5026 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 MLCC rework recommended land pattern for 0402 cap e483 PDF

    CAP, 0603 4.7pF

    Abstract: SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 SZP-5026Z 600S5
    Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar


    Original     		SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 CAP, 0603 4.7pF SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 600S5 PDF