Untitled
Abstract: No abstract text available
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
33dBm
54Mb/s
25dBm
680mA
DS120110
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SOF-26
Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
SZP-5026Z-EVB1
SZP-5026Z-EVB2
15GHz
35GHz
EDS-105366
SOF-26
SZP-5026
5.7Ghz low noise amplifier
600S4R7
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600S4R7
Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SZP-5026Z
SOF-26
DS110620
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
SZP5026Z-EVB1
600S4R7
600S0R5CW250
0805HQ-5N6XJBB
Coilcraft 0805
e483
SZP-5026
ZO21
600S5R6
600S4R7cw250
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MCH18
Abstract: ZO13 0805HQ-5N6XJBB
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
RFPA5026
33dBm
54Mb/s
25dBm
680mA
DS120110
MCH18
ZO13
0805HQ-5N6XJBB
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SZP-5026-HWD
Abstract: No abstract text available
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SZP-5026Z
SOF-26
DS111220
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
SZP5026Z-EVB1
SZP-5026-HWD
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Untitled
Abstract: No abstract text available
Text: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
RFPA5026
33dBm
54Mb/s
25dBm
680mA
CH185A1R8DK
MCH182CN104K
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Untitled
Abstract: No abstract text available
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
DS111220
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
15GHz
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Untitled
Abstract: No abstract text available
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
RFPA5026
33dBm
54Mb/s
25dBm
680mA
MCH182CN104K
600S4R7CW250
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SZP-5026
Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
SZP5026Z
SZP5026Z-EVB1
SZP5026Z-EVB2
15GHz
35GHz
DS091202
SZP-5026
600s5r6cw250
5.7Ghz low noise amplifier
SOF-26
MLCC rework
recommended land pattern for 0402 cap
e483
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