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California Eastern Laboratories (CEL) NE552R679A-A RF MOSFET LDMOS 3V 79A
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DigiKey	NE552R679A-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE552R679A-T1A-A RF MOSFET LDMOS 3V 79A
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DigiKey	NE552R679A-T1A-A	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $5.61812	Buy Now
California Eastern Laboratories (CEL) NE552R479A-EVPW24 EVAL BOARD NE552R479A
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DigiKey	NE552R479A-EVPW24	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	NE552R479A-EVPW24					1 $110 10 $110 100 $110 1000 $110 10000 $110	Get Quote
NEC Electronics Group NE552R479A-T1
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Bristol Electronics	NE552R479A-T1		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NE552R Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
NE552R479A	California Eastern Laboratories	3.0 V 0.25 W L&s-band Medium Power Silicon Ld-mosfet	Original	PDF
NE552R479A	NEC	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS	Original	PDF
NE552R479A-EVPW24	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE552R479A	Original	PDF
NE552R479A-T1	NEC	3.0 V Operation Silicon RF Power LDMOS FET for 2.45 GHz 0.4 W Transmission Amplifiers	Original	PDF
NE552R479A-T1A	California Eastern Laboratories	3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET	Original	PDF
NE552R479A-T1A	NEC	3.0 V Operation Silicon RF Power LDMOS FET for 2.45 GHz 0.4 W Transmission Amplifiers	Original	PDF
NE552R479A-T1A	NEC	NECs 3.0 V, 0.25 W, L&S-band medium power silicon LD-MOSFET.	Original	PDF
NE552R479A-T1A-A	California Eastern Laboratories	NECs 3.0 V 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET	Original	PDF
NE552R679A	NEC	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS	Original	PDF
NE552R679A-T1	NEC	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS	Original	PDF
NE552R679A-T1	NEC	3.0 V Operation Silicon RF Power LDMOS FET for 460 MHz 0.6 W Transmission Amplifiers	Original	PDF
NE552R679A-T1A	NEC	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS	Original	PDF
NE552R679A-T1A	NEC	3.0 V Operation Silicon RF Power LDMOS FET for 460 MHz 0.6 W Transmission Amplifiers	Original	PDF

NE552R Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE552R479A Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.	Original	NE552R479A NE552R479A mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency	PDF
mch215f104zp Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz	Original	NE552R479A NE552R479A 100mA 300mA mch215f104zp J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk	PDF
NE5511279A Abstract: NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS Text: NEC Silicon LD-MOS FETs www.cel.com Silicon LD-MOSFETs Typical Specifications @ TC = 25°C Part Number POUT dBm TYP NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR 26.0 11 40.0 32.0 35.5 33.0 40.4 VDS (V) IDSQ (mA) Package Code 19 3.0 200 79A 0.9 27	Original	NE552R479A NE5511279A NE5520279A NE5520379A NE55410GR NE5511279A NE5520279A NE5520379A NE552R479A NE55410GR 25VVGS	PDF
GL 7812 Abstract: ATC 2603 LDMOS NEC Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:	Original	NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC	PDF
NE552R679A Abstract: NE552R679A-T1 NE552R679A-T1A VP215 ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2	Original	NE552R679A NE552R679A NE552R679A-T1 NE552R679A-T1A VP215 ldmos nec	PDF
2.45 Ghz power amplifier 45 dbm Abstract: J842 2.45 Ghz power amplifier 30 db Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our	Original	NE552R479A NE552R479A HS350-P3 WS260 VP215 IR260 PU10124EJ03V0DS 2.45 Ghz power amplifier 45 dbm J842 2.45 Ghz power amplifier 30 db	PDF
NE552R479A-T1A Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our	Original	NE552R479A NE552R479A NE552R479A-T1A VP215 GSM1900 NE552R479A-T1 ldmos nec	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2	Original	NE552R679A NE552R679A	PDF
mch215f104zp Abstract: mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A ATC0603 Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz	Original	NE552R479A NE552R479A HS350-P3 mch215f104zp mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A-T1A ATC0603	PDF
Nec K 872 Abstract: NE552R679A NE552R679A-T1 NE552R679A-T1A VP215 nec 772 ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2	Original	NE552R679A NE552R679A Nec K 872 NE552R679A-T1 NE552R679A-T1A VP215 nec 772 ldmos nec	PDF
GL 7812 Abstract: ta 8264 NE55xx 7564 ROHM 7818 voltage ATC 2603 LDMOS NEC NEC 7812 Text: PRELIMINARY DATA SHEET 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +24.5 dBm TYP at VDS = 3 V 1.5 ± 0.2 4.2 Max	Original	NE552R479A GL 7812 ta 8264 NE55xx 7564 ROHM 7818 voltage ATC 2603 LDMOS NEC NEC 7812	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our	Original	NE552R479A NE552R479A	PDF
ne552r Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our	Original	NE552R479A NE552R479A ne552r	PDF
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT	PDF

NE5510279A Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01 Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is	Original		PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF
ne3511s02 s2p Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan	Original	07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N	PDF
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book	PDF
Avago 9886 Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8	Original	com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes	PDF
nec b1007 Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,	Original	NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G	PDF
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817	PDF

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NE552R Search Results

NE552R Price and Stock

California Eastern Laboratories (CEL) NE552R679A-A

California Eastern Laboratories (CEL) NE552R679A-T1A-A

California Eastern Laboratories (CEL) NE552R479A-EVPW24

NEC Electronics Group NE552R479A-T1

NE552R Datasheets (13)

NE552R Datasheets Context Search

NE552R479A

mch215f104zp

NE5511279A

GL 7812

NE552R679A

2.45 Ghz power amplifier 45 dbm

NE552R479A-T1A

Untitled

mch215f104zp

Nec K 872

GL 7812

Untitled

ne552r

mobile phone basic block diagram

NE5510279A

nec mosfet marked v75

2SK2500

FSQ510 Equivalent

SMD M05 sot23

ne3511s02 s2p

transistor marking T79 ghz

Avago 9886

nec b1007

marking code C1E SMD Transistor