RA55H4452M
Abstract: No abstract text available
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA55H4452M
440-520MHz
RA55H4452M
55-watt
520-MHz
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RD02MUS1
Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
T112
UHF transistor FET
RD02MUS1-101
3M Touch Systems
transistor J17
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RD07MVS1
Abstract: RD07MVS1-101 T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
520MHz
175MHz)
520MHz)
RD07MVS1-101
T112
3M Touch Systems
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RA13H4452M
Abstract: RA13H4452M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA13H4452M
440-520MHz
RA13H4452M
13-watt
520-MHz
RA13H4452M-101
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RA45H4452M
Abstract: RA45H4452M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA45H4452M
440-520MHz
RA45H4452M
45-watt
520-MHz
RA45H4452M-101
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RA07M4452M
Abstract: generator 4.20 mA
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier
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RA07M4452M
RA07M4452MSA
07M4452
440-520MHz
RA07M4452MSA
520-MHz
RA07M4452M
generator 4.20 mA
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RD07MVS1
Abstract: RD07MVS1B T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
520MHz
175MHz)
520MHz)
RD07MVS1B
RD07MVS1
T112
3M Touch Systems
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RD09MUP2
Abstract: No abstract text available
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-UHF-072-B Date: 6th Feb. 2006 Rev.date : 22th Jun. 2010 Prepared: M.Miyashita S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: “RD09MUP2” 400-520MHz RF characteristics data
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AN-UHF-072-B
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
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RD01MUS1-101
Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
c111m
RD01MSU1
3M Touch Systems
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100OHM
Abstract: RD30HUF1
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
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RD30HUF1
520MHz
RD30HUF1
520MHz
RD30HUF1-101
100OHM
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20-TSSOP
Abstract: KB8821 KB8822 KB8823
Text: PRELIMINARY SPECIFICATION V1.5 FREQUENCY SYNTHESIZER KB8821/22/23 INTRODUCTION The KB8821/22/23 are high performance dual frequency synthesizers with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz.
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KB8821/22/23
KB8821/22/23
520MHz.
KB8823)
KB8821/22/
20-TSly
TEL-97-D003
20-TSSOP
KB8821
KB8822
KB8823
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RD07MVS1
Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101
T112
07MVS1
3080D
RD07MVS
Rd07mvs1101
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GP 839 DIODE
Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.
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RD01MUS2
520MHz
520MHz
RD01MUS2
GP 839 DIODE
GP 809 DIODE
GP 841 Diode
MOS FET 1127
RF Transistor s-parameter vhf
RD01MUS2-101
t06 TRANSISTOR
5343 transistor
transistor M 839
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RA07N4452M
Abstract: RF MOSFET MODULE RA07N4452
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to
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RA07N4452M
440-520MHz
RA07N4452M
520-MHz
RF MOSFET MODULE
RA07N4452
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RA07M4452MSA
Abstract: RA07M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4452MSA RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to
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RA07M4452MSA
440-520MHz
RA07M4452MSA
520-MHz
RA07M
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RD07MVS1-101
Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101,
RD07MVS1-101
T112
ID-750
RD07M
D07MVS1
3M Touch Systems
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RD01MUS2
Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS2
520MHz
RD01MUS2
520MHz
RD01MUS2-101
GP 839 DIODE
FAN 3792
MOS FET 1127
GP 809 DIODE
IDQ100
01LOT
0703 transistor
3M Touch Systems
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet CDS6E-380/520 6dB Directional Coupler Product Description RFS CDS*E series Directional Coupler has been design for indoor applications covering 380 to 520MHz. Units couple off a defined fraction of signal from 6 to 30 dB with minimal reflections or loss.The
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CDS6E-380/520
520MHz.
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RA07H4452M
Abstract: RA07H4452M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M 440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 440- to 520-MHz
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RA07H4452M
440-520MHz
RA07H4452M
520-MHz
RA07H4452M-01
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SP8718
Abstract: SP8718AC
Text: SP8718AC 520MHz 64/65 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B The SP8718 -^64/65 is a 50mW program m able divider with a maximum specified operating frequency of 520MHz over the tem perature range -55° C to +125° C. The signal (clock) inputs are biased internally and require
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SP8718AC
520MHz
MIL-STD-883C
SP8718
MIL-M-38510
fortheSP8718ACat
SP8718
SP8718AC
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Untitled
Abstract: No abstract text available
Text: SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 520M H z PRESCALER FU JIT S U MB1504 SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 520MHz PRESCALER June 1 9 8 9 E d itio n 3 .0 The Fujitsu M B1504, u tilizin g BI-CMOS technology, is a single ch ip serial inp u t
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MB1504
520MHz
B1504,
B1504
16-bit
15-bit
14-bit
19-bit
18-bi
MB1504
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2SC3103
Abstract: No abstract text available
Text: - 198 - M A Sé fé '¡ ' m • 2 S C 3 1 0 3 EA %&WM is 'J -X , 2. 8Wo ffliÉ : VHF/uHF 150/400MHz «MSffl, 7. 2V m<a OHF 2* T' 20:1 VSWR tìÉtX-èo É : VHF/UHF (150/400MHz) UHF w ® 7 .2 v - y j - x , eifo 51 S Ì j i f t l M o W S : Vcc=9V, Po=6. 0W, f=520MHz O f j f f
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2SC3103
520MHz
15CC/W)
520MFiZ
150/400MHz
27MHz
800MHz)
860MHz,
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M64072FP
Abstract: M64072 64072FP 20SOP 20P2N 20P2E 20S50 M6407
Text: M IT S U B IS H I INTEGRATED CIRCUIT M 64072FP /G P 520MHz DUAL P L L FREQUENCY SYNTHESIZER DESCRIPTION M64072FP/GP is a 520MHz band 2 system 1 chip PLL fre quency synthesizer. Since PLL with 2 systems is incorpo rated, it is optimum for cordlessphone. duel band transceiv
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64072FP
520MHz
M64072FP/GP
20SOP)
20P2N
20P2E
20SOP
20P2N)
M64072FP
M64072
20SOP
20P2N
20P2E
20S50
M6407
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24P2E
Abstract: M64083GP
Text: MITSUBISHI SEMICONDUCTORS [DIGITAL/ANALOG IC] M64083GP Dual PLL Frequency Synthesizer DESCRIPTION The M64083GP is a dual-circuit single-chip PLL frequency synthesizer 1C that supports a maximum direct input of 520MHz. The M64083GP includes a high-speed lockup function. This 1C is ideal for
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M64083GP
M64083GP
520MHz.
24P2E
24P2E
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