RA13H4452M Search Results

RA13H4452M Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RA13H4452M		Mitsubishi	RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO		Original	PDF
RA13H4452M		Mitsubishi	440-520MHz 13W 12.5V MOBILE RADIO		Original	PDF
RA13H4452M-01		Mitsubishi	440 - 520 MHz 13 W 12.5 V, 2 Stage Amp. for Mobile Radio		Original	PDF
RA13H4452M-01		Mitsubishi	440-520MHz 13W 12.5V MOBILE RADIO		Original	PDF
RA13H4452M-101		Mitsubishi	RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO		Original	PDF
RA13H4452M-E01		Mitsubishi	440-520MHz 13W 12.5V MOBILE RADIO		Original	PDF

RA13H4452M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RA13H4452M Abstract: RA13H4452M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-101	PDF
RA13H4452M-01 Abstract: hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M RA13H4452M-E01 RF POWER amplifier 10 watt Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M 440-520MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz	Original	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-01 hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M-E01 RF POWER amplifier 10 watt	PDF
Untitled Abstract: No abstract text available Text: <Silicon RF Power Modules > RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the	Original	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz	PDF
RA13H4452M Abstract: RA13H4452M-101 transistor 60 13w Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-101 transistor 60 13w	PDF
RF MOSFET MODULE Abstract: RA13H4452M RA13H4452M-101 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RF MOSFET MODULE RA13H4452M-101	PDF
13w marking Abstract: 13w marking code MARKING CODE 13w Text: <Silicon RF Power Modules > RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the	Original	RA13H4452M RA13H4452M 13-watt 520-MHz 13w marking 13w marking code MARKING CODE 13w	PDF
RA13H4452M-01 Abstract: RA13H4452M Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-01	PDF
RA60H1317M1 Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR	Original	AN-GEN-026-H RA30H4452M 440-520MHz, 200pF, RA60H1317M1 RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M	PDF
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1	PDF
RA60H1317M1 Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR	Original	AN-GEN-026-G RA30H4452M 440-520MHz, 200pF, RA60H1317M1 C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M	PDF
RM15TB-H Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;	Original	CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A	PDF