50W RF POWER TRANSISTOR Search Results

50W RF POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

50W RF POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power	Original	PDF	NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007
NPTB00050B Abstract: No abstract text available Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power	Original	PDF	NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B
NPTB00050 Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115 Text: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from	Original	PDF	NPTB00050 4000MHz 500-1000MHz EAR99 450mA, 3000MHz, NDS-007 NPTB00050B Gan on silicon substrate ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
NTE325 Abstract: No abstract text available Text: NTE325 Silicon NPN RF Power Transistor 50W @ 30MHz Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:	Original	PDF	NTE325 30MHz NTE325 30MHz. 30MHz
RD70HVF1 Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 071J RF Transistor Selection 100OHM
RD70HVF Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF rd70 RD70HVF1-101 100OHM 071J 1695 GP 1
RD70HVF Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF
RD70HVF1 Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
RD70HVF1-101 Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz Oct2011 RD70HVF1-101 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
RD70HVF Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz
RD70HVF1 Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers	Original	PDF	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
A1933 Abstract: amplifier 50 50W Text: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB	Original	PDF	RF3931D 96mmx1 33mmx0 RF3931D DS110216 A1933 amplifier 50 50W
Untitled Abstract: No abstract text available Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB	Original	PDF	RF3931D 96mmx1 33mmx0 DS110520
46dBm Abstract: No abstract text available Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB	Original	PDF	RF3931D 96mmx1 33mmx0 RF3931D DS110520 46dBm

smd Transistor 1117 Abstract: PD85050S smd Transistor 1116 J0363 Text: PD85050S RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet −preliminary data Features • Operating frequencies from 1 MHz to 1000 MHz ■ POUT > 50W with 12dB gain @ 870 MHz / 13.6V ■ Unmatched device for wideband operation	Original	PDF	PD85050S PowerSO-10RF 2002/95/EC1 PowerSO-10RF PD85050S smd Transistor 1117 smd Transistor 1116 J0363
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.	Original	PDF	ILD0912M400HV ILD0912M400HV 960-1215MHz. ILD0912M400HV-REV-NC-DS-REV-A
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1011L470 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011L470 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S-ELM pulse burst	Original	PDF	IB1011L470 IB1011L470 IB1011L470-REV-NC-DS-REV-B
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 MHz. While operating in class C mode under DME pulsing	Original	PDF	IB1012S500 IB1012S500 IB1012S500-REV-NC-DS-REV-NC
J464 Abstract: SL-5020 j196 Transistor J182 Text: Advance Data Sheet Product Description SL-5020 The SL-5020 is Stanford Microdevices’ high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in	Original	PDF	SL-5020 SL-5020 SL-50201 40otal SL-50202 J464 j196 Transistor J182
transistor C 245 b Abstract: No abstract text available Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for	Original	PDF	MPSH11 MMBTH11 MPSH11 OT-23 transistor C 245 b
MPS-H20 Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*	Original	PDF	MPSH20 MMBTH20 MPSH20 OT-23 MPS-H20 npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
T1P3005028-SP Abstract: 50w transistor RF power transistor Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed	OCR Scan	PDF	T1P3005028-SP T1P3005028-SP 500MHz 50watts 50w transistor RF power transistor
332MCP Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP Text: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.	OCR Scan	PDF	297MP NTE297 NTE297) T0202 NTE307) 300MP NTE300 27MHz) NTE332) 332MCP NTE307 27MHz rf transmitter NTE332 NTE297 NTE300 T072 T092
2 x 50W amplifier Abstract: UHF TRANSISTOR 2SC3218B 50w transistor Text: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration	OCR Scan	PDF	2SC3218B 2SC3218B 2 x 50W amplifier UHF TRANSISTOR 50w transistor

50W RF POWER TRANSISTOR Search Results

50W RF POWER TRANSISTOR Result Highlights (5)

50W RF POWER TRANSISTOR Datasheets Context Search

Untitled

NPTB00050B

NPTB00050

NTE325

RD70HVF1

RD70HVF

RD70HVF

RD70HVF1

RD70HVF1-101

RD70HVF

RD70HVF1

A1933

Untitled

46dBm

smd Transistor 1117

Untitled

Untitled

Untitled

J464

transistor C 245 b

MPS-H20

T1P3005028-SP

332MCP

2 x 50W amplifier