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Amphenol Sine Systems 2CMA193331R1000 3P+N+E WALL MOUNTED INLET. REPLA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2CMA193331R1000	Box	20		1	1 $33.45 10 $28.432 100 $24.1706 1000 $22.6592 10000 $22.6592	Buy Now
Interstate Connecting Components	2CMA193331R1000					1 $35.5107 10 $29.2807 100 $27.3607 1000 $27.3607 10000 $27.3607	Buy Now
PEI Genesis	2CMA193331R1000		20		1	1 $30.43 10 $29.36 100 $29.36 1000 $29.36 10000 $29.36	Buy Now
Amphenol Sine Systems 2CMA193355R1000 3P+N+E PANEL MOUNTED INLET. REPL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2CMA193355R1000	Box	20		1	1 $29.27 10 $24.877 100 $21.1475 1000 $18.9875 10000 $18.9875	Buy Now
Interstate Connecting Components	2CMA193355R1000		3			1 $30.7022 10 $25.3158 100 $23.6557 1000 $23.6557 10000 $23.6557	Buy Now
PEI Genesis	2CMA193355R1000		20		1	1 $26.31 10 $25.39 100 $25.39 1000 $25.39 10000 $25.39	Buy Now
Amphenol Sine Systems 2CMA193300R1000 3P+E WALL MOUNTED INLET. REPLACE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2CMA193300R1000	Box	20		1	1 $33 10 $28.048 100 $23.8436 1000 $22.35248 10000 $22.35248	Buy Now
Newark	2CMA193300R1000	Bulk			1	1 $39.71 10 $30.71 100 $29.61 1000 $29.44 10000 $29.44	Buy Now
Interstate Connecting Components	2CMA193300R1000		3			1 $35 10 $28.8596 100 $26.9672 1000 $26.9672 10000 $26.9672	Buy Now
PEI Genesis	2CMA193300R1000		20		1	1 $30 10 $28.95 100 $28.95 1000 $28.95 10000 $28.95	Buy Now
Amphenol Sine Systems 2CMA193324R1000 3P+E WALL MOUNTED INLET. REPLACE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2CMA193324R1000	Box	20		1	1 $44.11 10 $37.492 100 $31.8729 1000 $29.88 10000 $29.88	Buy Now
PEI Genesis	2CMA193324R1000		20		1	1 $41.2 10 $39.75 100 $39.75 1000 $39.75 10000 $39.75	Buy Now
Amphenol Sine Systems 2CMA193322R1000 3P+E WALL MOUNTED INLET. REPLACE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2CMA193322R1000	Box	20		1	1 $25.52 10 $21.691 100 $25.52 1000 $25.52 10000 $25.52	Buy Now
Newark	2CMA193322R1000	Bulk			1	1 $30.73 10 $23.76 100 $20.31 1000 $20.31 10000 $20.31	Buy Now
PEI Genesis	2CMA193322R1000		20		1	1 $28.91 10 $27.9 100 $27.9 1000 $27.9 10000 $27.9	Buy Now

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A1933 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB	Original	RF3931D 96mmx1 33mmx0 DS110520	PDF
Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance	Original	RF3934D 96mmx4 57mmx0 DS110520	PDF
A1933 Abstract: No abstract text available Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB	Original	RF3932D 96mmx1 92mmx0 RF3932D DS110224 A1933	PDF
Untitled Abstract: No abstract text available Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB	Original	RF3932D 96mmx1 92mmx0 RF3932D DS110520	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
Amplifier 10W bluetooth Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die Text: RF3930D 10W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 19dB at 2GHz  48V Typical Performance  Output Power: 16W at P3dB  Drain Efficiency: 70% at P3dB	Original	RF3930D RF3930D DS130412 Amplifier 10W bluetooth DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector 3930D SiC diode die	PDF
A1933 Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175 Text: A1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)	Original	2SA1933 2SC5175 A1933 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175	PDF
2SA1933 Abstract: 2SC5175 A1933 Text: A1933 東芝トランジスタシリコンPNPエピタキシャル形 A1933 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = −0.4 V (最大) (IC = −2 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)	Original	2SA1933 2SC5175 2-10T1A 20070701-JA 2SA1933 2SC5175 A1933	PDF
Untitled Abstract: No abstract text available Text: RF3932D RF3932D 60W GaN on SiC Power Amplifier Die Package: Die The RF3932D is a 48V, 60W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general	Original	RF3932D RF3932D 49dBm DS130906	PDF
Untitled Abstract: No abstract text available Text: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete amplifier die designed for military communications, electronic warfare, general purpose broadband, commercial wireless infrastructure, and industrial/scientific/medical applications. Using	Original	RFHA3942D RFHA3942D DS131024	PDF
Untitled Abstract: No abstract text available Text: RF3934D 120W GaN on SiC Power Amplifier Die RF3934D Package: Die Features The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general	Original	RF3934D RF3934D 51dBm DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB	Original	RF3932D 96mmx1 92mmx0 DS110520	PDF
RF3930D Abstract: RF3930 Text: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB	Original	RF3930D RF3930D DS110406 RF3930	PDF
A1933 Abstract: amplifier 50 50W Text: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB	Original	RF3931D 96mmx1 33mmx0 RF3931D DS110216 A1933 amplifier 50 50W	PDF

Untitled Abstract: No abstract text available Text: A1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)	Original	2SA1933 2SC5175	PDF
Untitled Abstract: No abstract text available Text: RF3931D RF3931D 30W GaN on SiC Power Amplifier Die Package: Die The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general	Original	RF3931D RF3931D DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3930D RF3930D 10W GaN on SiC Power Amplifier Die Package: Die The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general	Original	RF3930D RF3930D 42dBm DS130906	PDF
Untitled Abstract: No abstract text available Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance	Original	RF3933D RF3933D90 96mmx2 52mmx0 RF3933D DS110520	PDF
RF3934D Abstract: GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A Text: RF3934D 120W GaN on SiC POWER AMPLIFIER DIE RF3934D Proposed 120W GaN ON SiC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged	Original	RF3934D RF3934D 96mmx4 57mmx0 DS110225 GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A	PDF
220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx	PDF
wiring diagram audio amplifier ic 6283 Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838 Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor	OCR Scan	4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838	PDF
14 pin BERG Abstract: TA-531 65043-015 ta531 Text: Discrete Crimp-to-Wire Pins/Receptacles/ Housings 2.54 x 2.54 mm 0.100 x 0.100 in. Centerlines Mini-Latch Housing Features Used With • For use with highly reliable dual-metal Mini-PV contacts and crimp-to-wire pins. ■ Available in single- and double-row	OCR Scan	B-122 MIL-M-20693 MIL-P-464 14 pin BERG TA-531 65043-015 ta531	PDF
DS1304 Abstract: RFMD HEMT GaN SiC amplifier circuit diagram class E 30w Text: RF3931D 30W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 14dB at 2GHz  48V Typical Packaged Performance  Output Power: 50W at P3dB  Drain Efficiency: 65% at P3dB	Original	RF3931D RF3931D DS130423 DS1304 RFMD HEMT GaN SiC amplifier circuit diagram class E 30w	PDF
Untitled Abstract: No abstract text available Text: RF3933D RF3933D 90W GaN on SiC Power Amplifier Die Package: Die The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general	Original	RF3933D RF3933D DS130906	PDF

A1933 Search Results

A1933 Price and Stock

Amphenol Sine Systems 2CMA193331R1000

Amphenol Sine Systems 2CMA193355R1000

Amphenol Sine Systems 2CMA193300R1000

Amphenol Sine Systems 2CMA193324R1000

Amphenol Sine Systems 2CMA193322R1000

A1933 Datasheets Context Search

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A1933

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schematic diagram atx Power supply 500w

Amplifier 10W bluetooth

A1933

2SA1933

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RF3930D

A1933

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RF3934D

220v AC voltage stabilizer schematic diagram

wiring diagram audio amplifier ic 6283

14 pin BERG

DS1304

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