2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

BC557 pnp transistor

Abstract: BC551 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A
Contextual Info: T092 PLASTIC PACKAGE TRANSISTORS PNP Typ» No. VC80 (V) Min 50 BC307B {Ta=25°C, U n le s s O th e rw is e S p e c ifie d ) E le c tric a l C h a ra c te ristic s M a x im u m R a tin g s VCEO VEBO lC0O (V) Min (V) Min (uA) Max hFE ^ce (VI 45 lc & (mAl

LW336

Abstract: b37 zener ohmmeter diagram ZENER B37 lm317 t092 1N4148 LM236 1N4148 thomson LM334 LM336
Contextual Info: [ Z T S G S -1 H 0 M S 0 N *71» M [3©im ST[M [K]Q©l LM236,A LM336,B 2.5V VOLTAGE REFERENCES . LOWTEMPERATURE COEFFICIENT . WIDE OPERATING CURRENT OF 400|iA TO 10mA . 0.2D DYNAMIC IMPEDANCE • GUARANTEED TEMPERATURE STABILITY . FAST TURN-ON z T092 (Plastic Package

Contextual Info: /T T SGS-THOMSON " 'l i , RülDlgœiUagirMDÊS TL1431 PROGRAMMABLE VOLTAGE REFERENCE • ADJUSTABLE OUTPUT VOLTAGE : Vref tO 36V ■ SINK CURRENT CAPABILITY : 1 to 100mA ■ TYPICAL OUTPUT IMPEDANCE : 0.2Q. ■ 0.4% AND 0.25% VOLTAGE PRECISION z T092 Plastic Package

insb

Abstract: Hall Sensor insb HALL ELEMENT SHS361
Contextual Info: T - .33-01 SANYO SEMICO NDUCTOR CORP DIE » 7 1 1 7 0 7 t DDQSSlfc 4 | " P a s - oi BIDIRECTIONAL THYRISTORS P \ V rm(V loo' ^A) 0.5 t - o i - an . ’200 ' DTA05B : •Vêt • : % imA) (vj;. Package . DTA05E 15 2.3 T092 DTA08E 10 1.5 T092 DTA1C DTA1E

ZTX1051A

Abstract: IE1001 1C501 T092 ZTXI051A
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2- JANUARY Full characterised H 1995 data now available c E E-Line T092 Compatible 4BSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER ZTX1051A UNIT —— Collector-Base Voltage Collector-Emitter Emitter-Base

ZVN2106A

Abstract: T092 j-40-20 T 3361 D
Contextual Info: N-CHANNEL ENHANCEMENT ZVN2106A MODE VERTICAL DMOS FET ISSUE 2- MARCH 94 ❑ FEATURES * 60 Volt VD~ *R J 1 DS on =2Q ID G s E-Line T092 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source V&age .——— ‘DS ID 450 .———. Gate Source Voltage . . .——

T092

Abstract: ZTX552 ZTX553
Contextual Info: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES * 100 volt Vc.o 1 Amp continuous * Ptot= 1 Watt * current I ABSOLUTE MAXIMUM I RATINGS. E-Line T092 Compatible -~ ~rnitter-Base Voltage -——— v EBO — Peak Pulse Current

T092

Abstract: ZVP21
Contextual Info: P-CHANNEL ENHANCEMENT ZVP21IOA MODE VERTICAL DMOS FET ISSUE 2- 1 MARCH 94 ‘DS on =8U * I ❑ FEATURES * 100 volt vD~ o G s E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Pulsed Drain C;rrent ‘DS at Tamb=25°C

transistores

Abstract: AMPLIFICADOR PE210 PE108 oscilador amplificador de 400 w amplificador de RF PE109 amplificadores de audio amplificador transistor audio
Contextual Info: 50E D • ñ2315ím GODOODS T ■ T-2-cL-2A -SID MICROELETRÔNICA S/A Tipo Pol. Emcaps. Term 321 PC107 PNP T092 EBC PC108 PNP T092 EBC PC109 PE107 PE108 PE109 PE155 PE210 PE254 PE255 PE422 PE423 BD135 PNP NPN NPN

transistor et 455

Abstract: ZIX690B T092 ZSM561 T0921 diode L04C
Contextual Info: SUPPLY VOLTAGE ZSM561 MONITOR ISSUE 2- NOVEMBER 1995 DEVICE DESCRIPTION The device is available in a T092 package for through hole applications as wall as S08 and SOT223 for surface mount requirements. The ZSM561 is a three terminal under voltage monitor circuit for use in microprocessor

BC319B

Abstract: BF337 BC115 BC114 BC207 BC113 BC207A BC207b fairchild semiconductors BC208
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE T A B LE M a x R a tin g s Co d e Vceo V o lts Ptot T a — 25*C M in mW C h a r a c te r is tic s @

tl4311

Abstract: TL431 t092 T092 TL431 TL431AC TL431AI TL431C TL431I tl431l
Contextual Info: SGS-THOMSON TL431 R ilD(g[S@i[L[l(§TnM R!lD(g@ PROGRAMMABLE VOLTAGE REFERENCE . ADJUSTABLE OUTPUT VOLTAGE : V ref tO 36V . SINK CURRENT CAPABILITY: 1 to 100mA . TYPICAL OUTPUT IMPEDANCE : 0.22Q . 1% AND 2% VOLTAGE PRECISION z T092 (P la stic Package) N D IP 8

BC360

Abstract: BC383 BC349 BC360-10 IC 4070 BC384 BC382 BC441-6 t092 250M
Contextual Info: SEMELAB LTD Reliability Option "type No. Polarity 37E D Package v CEO •c cont ■ S1331fi? 000DQ35 T BISriLB hFE@ V c e /'C »T Pd BC341 BC349 BC360 BC360-6 BC360-10 NPN NPN PNP PNP PNP T039 T092 T039 T039 T039 60 20 40 40 40 0.5 0.1 0.5 0.5 0.5 40-250 40-450

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - JU LY 94 FEATU RES * 200 Volt VCE0 * 1 A m p continuous current * Ptot= 1 W a tt REFER TO Z TX 755 FOR G R A P H S E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage

Contextual Info: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ISSUE 3 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR423 uses a bandgap circuit design to achieve a precision micropower voltage reference of 1.25 vo lts. The device is available in a T092 style package forthrough

2N6715

Contextual Info: 2N6714 2N6715 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * * * 40 Volt V CE0 Gain of 50 at lc= 1 Am p P,0,= 1W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

SM-8 Package

Abstract: S08PACKAGE T8 SOT23
Contextual Info: Voltage Regulator Connection Diagrams S0 8 Package Suffix - N8 1 SOT223 4 2 - - 7 1E 2C 3 - - 6 3 C Top View > Top View Pin 4 floating or connected to pin 2 SOT23 Package Suffix - F T092 3d □ 1 2C Top View SM 8 Package Suffix - G Package Suffix - T8

CB140

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX454 ZTX455 ISSUE 2 - MARCH 1994_ FEATURES * 140 V olt V CE0 * 1 A m p c o n tin u o u s current * Ptot= 1 W att E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L ZTX454

2n6726

Abstract: 2n6727
Contextual Info: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * * 4 0 V o ltV CEO Gain of 50 at lc : 1 Amp * Ptot=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 Collector-Base Voltage V C BO -40 Collector-Emitter Voltage

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 - JULY 94_ FEATURES * 300 V o lt V CE0 * 0.5 A m p c o n tin u o u s c u rre n t * Pf„ f= 1 W a tt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS.

BO 241 A

Contextual Info: NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSU E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 Am p continuous current * Low saturation voltage * Ptot= l Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS.

Contextual Info: P-CHANNEL ENHANCEMENT ZVP2120C MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 200 Vo lt VDS * RDS on.=25n _ REFER TO ZVP2120A FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT