Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MMBTH20 Search Results

    MMBTH20 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMBTH20 Fairchild Semiconductor NPN RF Transistor Original PDF
    MMBTH20 National Semiconductor Sulface Mount Transistors Scan PDF
    MMBTH20 National Semiconductor Surface Mount Transistors Scan PDF
    MMBTH20 National Semiconductor NPN RF Transistor Scan PDF

    MMBTH20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPS-H20

    Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		PDF MPSH20 MMBTH20 MPSH20 OT-23 MPS-H20 npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN

    CBVK741B019

    Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		PDF MPSH20 MMBTH20 MPSH20 OT-23 CBVK741B019 F63TNR MMBTH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20

    Untitled

    Abstract: No abstract text available
    Text: MMBTH20 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30è V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)135þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF MMBTH20

    MPSH20

    Abstract: MMBTH20 Q100 500 uf 50v npn, transistor, sc 107 b
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		PDF MPSH20 MMBTH20 MPSH20 OT-23 MMBTH20 Q100 500 uf 50v npn, transistor, sc 107 b

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


    Original     		PDF PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A

    8F SOT-23 PNP on

    Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
    Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process


    Original     		PDF FDLL914 LL-34 FDLL914A FDLL914B FDLL916 FDLL916A 8F SOT-23 PNP on 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor

    bf223

    Abstract: PE210C BF311 PE210B 2SC1293 bfy88 BF330 nec RF package SOT89 2SC1260 BF497
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293


    Original     		PDF BSW43 BSX52 MMBT41o-X O-92var O-23S O-10S O-20SM O-23Svar bf223 PE210C BF311 PE210B 2SC1293 bfy88 BF330 nec RF package SOT89 2SC1260 BF497

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


    Original     		PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    MRF472

    Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293


    Original     		PDF BSW43 BSX52 MMBT41ran MRF472 MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B

    NPN RF Amplifier

    Abstract: y-parameter MMBTH20 MPSH20 U407
    Text: MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A


    OCR Scan     		PDF LSG113Ã b501130 NPN RF Amplifier y-parameter MMBTH20 MPSH20 U407

    Untitled

    Abstract: No abstract text available
    Text: MPSH20/MMBTH20 W A National Jim Semiconductor MPSH20 MMBTH20 Ih r ¡J TO- 236 SOT-23 TO-92 TL/G/10100-5 TL/G/10100-3 NPN RF Transistor Electrical Characteristics ta =25°c unless otherwise noted Parameter Symbol Min Typ Max Units O FF CH ARACTERISTICS V (BR)CEO


    OCR Scan     		PDF MPSH20/MMBTH20 MPSH20 MMBTH20 OT-23) TL/G/10100-5 TL/G/10100-3 100/nAdc,

    J31C

    Abstract: MMBTH30 MMBT6543
    Text: NATL Surface Mount Transistors RF Amplifiers and Oscillator»— NPN Type No. Case Style "A *“ CB0 V cr Max 11 & hre @ iC Vce Min Max (mA) (V) 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25 3 100 25 MMBT918 TO-236 (49) 30 15 3 10 MMBT3563 TO-236 (49) 30 15 2


    OCR Scan     		PDF 0D371ES J31C MMBTH30 MMBT6543

    MMBTH11

    Abstract: MMBTH24 MMBT5179 MMBT918 MMBTH10 MMBTH20 MMBTH34
    Text: This Surface Mount Transistors Material IT a fc-> In b-> ÜÜ □ Surface Mount Transistors NPN RF Amplifiers and Oscillators Case Style ^CBO V CEO ^ EB O V (V) (V) Min Min Min *CBO V <nA)@ “ Max 'v' h FE @ ‘c & .- . Device No. (SOT-23 Mark) ^ JJ


    OCR Scan     		PDF OT-23 MMBT5179 O-236 MMBTH10 MMBT918 MMBTH11 650mA) MMBTH11 MMBTH24 MMBT5179 MMBT918 MMBTH10 MMBTH20 MMBTH34