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    ELXY630ELL271MK25S Price and Stock

    United Chemi-Con Inc ELXY630ELL271MK25S

    CAP ALUM 270UF 20% 63V RADIAL
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    DigiKey ELXY630ELL271MK25S Bulk 857 1
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    Mouser Electronics ELXY630ELL271MK25S
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    Verical ELXY630ELL271MK25S 2,850 100
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    Onlinecomponents.com ELXY630ELL271MK25S 2,880
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    Quest Components ELXY630ELL271MK25S 80
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    Master Electronics ELXY630ELL271MK25S 2,880
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    ELXY630ELL271MK25S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ELXY630ELL271MK25S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 270UF 63V 20% RADIAL Original PDF

    ELXY630ELL271MK25S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007

    NPTB00025

    Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
    Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR

    PIMD3

    Abstract: No abstract text available
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3

    NPT25100

    Abstract: PIMD3
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006

    NPT25015

    Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
    Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015D JESD22-A114 JESD22-A115 APP-NPT25015-25 NPT25015DT

    NPT35015

    Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
    Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power


    Original     		PDF NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT

    Untitled

    Abstract: No abstract text available
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004

    NPT25015DT

    Abstract: NPT25015DR
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015DT NPT25015DR

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    GRM188R72A104KA35D

    Abstract: GaN Bias 25 watt NPTB00025 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019
    Text: AD-001 AD-001: Nitronex NPTB00025 GaN HEMT Tuned for 2.11 to 2.17GHz Application board AD-001 with a Nitronex NPTB00025 GaN HEMT device outputs approximately 3 Watts of average RF power under single carrier WCDMA modulation1 with approximately 12.5.0 dB gain, 30+% drain efficiency and an ACPR better then 35dBc. All measurements were collected at 2.11 to 2.17GHz with a drain bias of


    Original     		PDF AD-001 AD-001: NPTB00025 17GHz AD-001 35dBc. 17GHz 250mA. GRM188R72A104KA35D GaN Bias 25 watt 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019

    NPTB00050

    Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
    Text: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from


    Original     		PDF NPTB00050 4000MHz 500-1000MHz EAR99 450mA, 3000MHz, NDS-007 NPTB00050B Gan on silicon substrate ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115

    NPTB00050B

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


    Original     		PDF 000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR