Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.
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HYM581000A
HY514400
HYM581000AM
50nYCLE
1BB03-20-MAY93
061MAX.
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HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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HY514410A
8-10-A
4b750fl
000147b
HY514410AJ
HY514410AU
HY514410AT
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Untitled
Abstract: No abstract text available
Text: HY62256A-I Series »HYUNDAI 32K X 6-bit CMOS SRAM DESCRIPTION The HY62256A-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256A-I
1DC02-11-MA
4b75GflÃ
1DC02-11-MAY94
4b750A
0003f
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Untitled
Abstract: No abstract text available
Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in
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HYCFLF16008
x8/x16
16Mbit
00031flfl
1FC08-01-MAR96
4Li750flfl
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.
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HYM532100A
32-bit
HY514400A
22/iF
HYM5321OOAM/ALM
HYM532100AMG/ALMG
1CC03-00-M
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Untitled
Abstract: No abstract text available
Text: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit
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HY6264A
speed-70/85/100/120ns
1DB01-11-MAY94
HY6264AP
HY6264ALP
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HY53C464LS
Abstract: HY53C464
Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
4b750afl
1AA02-20-APR93
HY53C464S
HY53C464LS
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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HYM53221OA
32-bit
HYM53221
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
4b750Afl
1CE13-10-DEC94
HYM532210A
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Untitled
Abstract: No abstract text available
Text: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.
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HYM532256A
32-bit
HY534256A
22/tF
HYM532256AM/ALM
HYM532256AMG/ALMG
4b75oaa
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HY53C464LS
Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
Text: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
CMO442)
335ie
P-021
A02-20-MA
HY53C464LS
HY53C464F
hy53c464lf
HY53C464LF70
HY53C464S
An-313
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hy5116100
Abstract: No abstract text available
Text: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide
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HY51161OOA
HY5116100A
HY51161
C1801
4b750Ã
1AD19-10-MAYÃ
HY5116100AJ
HY51161OOASLJ
hy5116100
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HY628400LLG-I
Abstract: DV06 138-884
Text: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400-I
512Kx
1DE02-11-MAY95
HY628400LP-I
HY628400LLP-I
HY628400LG-I
HY628400LLG-I
DV06
138-884
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HYM536220
Abstract: HY5118160 HYM536220W70
Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
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HYM536220
36-bit
HYM536220
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
1cd06-01-sep94
HYM536220W70
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PP-T20
Abstract: HY5117400B bel power QBS
Text: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400B
HY5117400B
Y5117400B
4b750fl
1AD46-00-MAY9S
GG0457E
HY5117400BJ
HY5117400BSLJ
PP-T20
bel power QBS
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Untitled
Abstract: No abstract text available
Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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HY5216256
256Kx
16-bit
16bits
4b750Ã
1VC01-00-MAY95
525mil
64pin
4b750flÃ
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048bit EEPROM on a 168 pin
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HYM572A224A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A224ARG/ASLRG/ATRG/ASLTRG
01CKQ2SXMX.
012SQ18)
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Untitled
Abstract: No abstract text available
Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
HY51V16400A
HY51V16400Ato
4b75Dfifl
1AD31-00-MAY95
0QG441D
HY51V16400AJ
HY51V16400ASU
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
HY51V16400A
HY51V16400Ato
1AD31-00-MAY94
4b750flfl
HY51V16400AJ
HY51V16400ASLJ
HY51V16400AT
HY51V16400ASLT
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Untitled
Abstract: No abstract text available
Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands
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HY29F200T/B
HY29F200
16-Bit)
G-70I,
T-70I
R-701
G-70E,
T-70E,
R-70E
G-90I
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P55i
Abstract: B0000h-BFFFF
Text: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and
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16Kbytes,
HY29F800
16-bit
16-bit)
P-55I,
T-55I,
R-551
P-55E,
T-55E,
P55i
B0000h-BFFFF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 1 6 1 0 0 S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116100
fam35)
1AD01
-10-APR93
HY5116100JC
HY5116100UC
HY5116100TC
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Untitled
Abstract: No abstract text available
Text: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed
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256Kx32bit
b75Qfl
DDD5370
1SC01-01-NOV96
HY588321
-01-NOV96
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