HY51V16160BJC
Abstract: No abstract text available
Text: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V18160B
HY51V16160B
1Mx16,
16-bit
1Mx16
HY51V16160BJC
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 6 1 6 0 B “H Y U N D A I S e r ie s 1M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION The HY51V16160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques
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16-bit
HY51V16160B
16-bit.
42/42pin
11B3S
0083P31Q
GDG47SÃ
1AD55-10-MAY95
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM5V641OOA X-Series IM X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64100A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY51V16160B in 42/42pin SOJ or 44/50pin TSOP-II, two 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy
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HYM5V641OOA
64-bit
HYM5V64100A
HY51V16160B
42/42pin
44/50pin
16-bit
HYM5V64100AXG/ASLXG/ATXG/ASLTXG
1EC06-10-AUG95
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phc51
Abstract: A0317
Text: HYUNDAI H Y 5 1 V 1 6 1 6 0 B S e r ie s 1 M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION T he H Y51V 16160B is th e new generation and fa st dynam ic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques
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16-bit
16160B
16-bit.
HY51V16160B
42/42pin
D55-10-MA
HY51V16160BJC
616CIBSIJC
phc51
A0317
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Untitled
Abstract: No abstract text available
Text: •'HYUNDAI HY51V18160B, HY51V16160B _ 1M x 16bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells within the
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HY51V18160B,
HY51V16160B
16bit
HY51V18160BJC
HY51V18160BSLJC
HY51V18160BTC
HY51V18160BSLTC
Y51V16160BJC
HY51V16160BSLJC
HY51V16160BTC
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM5V64200A X-Series 2M X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64200A is a 2M x 64-bit Fast page mode CMOS DRAM module consisting of eight HY51V16160B in 42/42 pin SOJ or 44/50pin TSOR two 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy
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HYM5V64200A
64-bit
HY51V16160B
44/50pin
16-bit
HYM5V64200AXG/ASLXG/ATXG/ASLTXG
321ED03-10-AUG9S
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1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
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256Kx4-bit,
1MX16BIT
16MX1
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Untitled
Abstract: No abstract text available
Text: - H Y U N D A I * HY51V18160B,HY51 V I6160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V18160B
I6160B
1Mx16,
16-bit
DQO-OQ15)
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V18160B,HY51 V 16160B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V18160B
16160B
1Mx16,
16-bit
1Mx16
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
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d 100 d
Abstract: Y514100A HYM532220
Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"
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HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYM5V64100AN/ATN
HYM5V64100AX/ATX
HYM5V64120AX/ATX
HYMSV72103AN/ATN
HYM5V72A100ATN
HYM5V72A120ATX
HY51V16164B
HY51V18164BJ/BT
d 100 d
Y514100A
HYM532220
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Untitled
Abstract: No abstract text available
Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16
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32814A
32810A
536A804AM
HYM536A814AM
36810A
HY5117404AJ/AT
HY5117400AJ/AT
HY5116404AJ
HY5117404AJ
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