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    D0022 Search Results

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    D0022 Price and Stock

    Wima FKP0D002200B00KSSD

    CAP FILM 220PF 10% 100VDC RAD
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    DigiKey FKP0D002200B00KSSD Bulk 21,959 1
    • 1 $0.71
    • 10 $0.432
    • 100 $0.2888
    • 1000 $0.2126
    • 10000 $0.19156
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    Mouser Electronics FKP0D002200B00KSSD 9,969
    • 1 $0.71
    • 10 $0.323
    • 100 $0.288
    • 1000 $0.212
    • 10000 $0.191
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    Wima FKP2D002201D00KSSD

    FKP 2 220 PF 100 VDC 4.5X6X7.2 P
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    DigiKey FKP2D002201D00KSSD Bulk 7,611 1
    • 1 $0.54
    • 10 $0.326
    • 100 $0.2113
    • 1000 $0.15076
    • 10000 $0.12618
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    Mouser Electronics FKP2D002201D00KSSD 4,274
    • 1 $0.51
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    • 100 $0.197
    • 1000 $0.141
    • 10000 $0.121
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    Avnet Abacus FKP2D002201D00KSSD 12 Weeks 12,000
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    Wima FKP2D002201D00JSSD

    FKP 2 220 PF 100 VDC 4.5X6X7.2 P
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    DigiKey FKP2D002201D00JSSD Bulk 6,178 1
    • 1 $0.58
    • 10 $0.349
    • 100 $0.2277
    • 1000 $0.16313
    • 10000 $0.13694
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    Mouser Electronics FKP2D002201D00JSSD 4,580
    • 1 $0.51
    • 10 $0.343
    • 100 $0.225
    • 1000 $0.15
    • 10000 $0.133
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    Newark FKP2D002201D00JSSD Bulk 18,743 1
    • 1 $0.52
    • 10 $0.357
    • 100 $0.234
    • 1000 $0.183
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    Avnet Abacus FKP2D002201D00JSSD 16 Weeks 12,000
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    Wima FKP0D002200B00JSSD

    CAP FILM 220PF 5% 100VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FKP0D002200B00JSSD Bulk 3,500 1
    • 1 $1.07
    • 10 $0.661
    • 100 $0.447
    • 1000 $0.33304
    • 10000 $0.28673
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    Smart Sensor Devices SSD002-2B-EU

    SENSOR AIR QUALITY BLUETOOTH OUT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSD002-2B-EU 32 1
    • 1 $234.32
    • 10 $219.675
    • 100 $234.32
    • 1000 $234.32
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    D0022 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    basic stamp bipolar stepper motor

    Abstract: LAYOUT PCB BTL TDA 2003 capacitor 1e77 ADB11 smd 1e74 65C816 transistor smd zG j1 B12 GDM smd h2d transistor CDC1631F-E
    Text: PRELIMINARY DATA SHEET MICRONAS CDC16xxF-E Automotive Controller Family User Manual CDC1605F-E Automotive Controller Specification Edition May 25, 2004 6251-606-1PD MICRONAS CDC16xxF-E PRELIMINARY DATA SHEET Contents Page Section Title 5 5 9 1. 1.1. 1.2. Introduction


    Original
    CDC16xxF-E CDC1605F-E 6251-606-1PD basic stamp bipolar stepper motor LAYOUT PCB BTL TDA 2003 capacitor 1e77 ADB11 smd 1e74 65C816 transistor smd zG j1 B12 GDM smd h2d transistor CDC1631F-E PDF

    TWX910-950-1942

    Abstract: XGS05035 XGSQ5030 XGSQ5035 XGSQ5040
    Text: SÛUARE D CO/ GE NE RAL 3918590 GENERAL 15 D • ôSESSQâ D002210 SEM ICONDUCTOR 95D S 02210 CR. General ^ ^S em ico n d u cto r i^L * Industries, Inc. XGSQ5030 XGSQ5035 XGSQ5040 adUHRETl COMPRNV 7-0 3 - 0*7 NPN SWITCHING POWER TRANSISTORS NPN This unique series utilizes General Semiconductor Industries' C 2R process which


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    D002210 XGSQ5030 XGSQ5035 XGSQ5040 XGSQS030 XGSQ5040 10MHz 10//S TWX910-950-1942 TWX910-950-1942 XGS05035 PDF

    westinghouse thyristor drive

    Abstract: sa40d Westinghouse thyristor DDG227S P095PH08FJ0 westinghouse to-94 thyristor inverter
    Text: lilESTCODE SE M IC ON DU CT OR S 3TE D • ^O ^S S D002273 0 ■ IdESB ^ - ¿ 5 T - / 9 Technical Publication WESTCODE ® SEMICONDUCTORS TP095P/R Issue 2 November 1984 Inverter Grade Stud-Base Thyristor Type P095P/P095R 95 amperes average: up to 1200 volts VRRM/VDRM


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    P095P/P095R TP095P/R -20UNF-2A westinghouse thyristor drive sa40d Westinghouse thyristor DDG227S P095PH08FJ0 westinghouse to-94 thyristor inverter PDF

    Untitled

    Abstract: No abstract text available
    Text: ICS1891 Integrated Circuit Systems, Inc. Advance Information 100Base-TX PHYceiver for Unmanaged Fast Ethernet Applications General Description Features The ICS1891 is a fully integrated physical layer device sup­ porting unmanaged 100Mb/s only CSMA/CD Ethernet appli­


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    ICS1891 100Base-TX ICS1891 100Mb/s D2255 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • so-1100 MHz ■ High Isolation ■ All-Off Condition Jj MODEL NO. VEf DSW25030 GaAs SP2T ■ Non-Reflective ■ Ultra Small 0.270 sq. Surface Mount Package .295 RF2 GND 9 10 + 5V GND RF COM 6 8 PIN 1 DESIGNATION RF 1 GND -15V TTL 2 " TTL1 0" “


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    so-1100 DSW25030 D002214 PDF

    b20 p03

    Abstract: GS214 TSD2331 tms 1601 EL B17 B20 n03 G5214
    Text: VITESSE VSC7203 Preliminary Data Sheet 1 GByte/sec SCI Compliant Switch Node Bypass Circuit Features • One Port Conforms to Low Voltage Differential Signalling LVDS Standard (IEEE Std. 1596.3) Multiplexers Allow Bypassing Around any Port for Faulty Node Isolation.


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    VSC7203 27mm/side) G52143-0 00022bS b20 p03 GS214 TSD2331 tms 1601 EL B17 B20 n03 G5214 PDF

    L7C174WC-15

    Abstract: No abstract text available
    Text: L7C174 8K x 8 Cache-Tag Static RAM FEATURES DESCRIPTION □ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 12 ns maximum □ High Speed Flash Clear □ High Speed Read Access Time — 12 ns maximum □ Low Power Operation


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    L7C174 MIL-STD-883, IDT7174, IDT71B74, MK48H74 28-pin 32-pin L7C174WC-15 PDF

    MOSFET D25

    Abstract: No abstract text available
    Text: VMM 15-045 VMM 15-05 Dual Power MOSFET Modules DSS D25 R DS on = 450/500 V = 20 A = 0.2 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T d = 25°C to 150°C VMM 15-045 VMM 15-05 450 500 V V v DGR T,J = 25°C to 150°C; FL. = 2 0 k i2 Cab VMM 15-045


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    4bflb22b D00221B MOSFET D25 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: Single-error-correct SEC high-speed ECC algorithm Single 5.0V ± 0.25V Power Supply All inputs & outputs are fully TTL & CMOS compatible


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    IBM11D8480B IBM11E8480B 72-Pin 130ns 26H2528 SA14-4319-01 000224b PDF

    Untitled

    Abstract: No abstract text available
    Text: SARA Chipset Technical Manual Segmentation SARA Hardware Description Chapter 3. Hardware Description 3.1 Segmentation SARA Hardware Description 3.1.1 Segmentation SARA Internal Block Description Figure 3-1 shows a block diagram of the Segmentation SARA chip.


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    DDD23D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIODE THREE PHASES BRIDGE TYPE DF20AA Power Diode Module D F 2 0 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink


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    DF20AA 20Amp F20Ap D002263 B-125 B-126 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE SF150AA20 UL;E76102 M is an isolated MOSFET module designed for fast switching applications of low voltage/high current. SF1 5 0 A A 2 0 enable you to control high power with compact package. SF1 5 0 A A 2 0 • I ,= 150A. V;s = 200V • Compact Package


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    SF150AA20 E76102 100m200m QDD224A PDF

    2SJ374

    Abstract: diode EGP 10 F20F6P 60v 10a p type mosfet diode EGP
    Text: 6 0 V v 'J - X yt-7-MOSFET 60V S E R IE S PO W ER M O S F E T W M \|->ÎIS1 O U T L I N E D IM E N S IO N S -60v-20a I ffitS * R A T IN G S A b s o lu te J-R Item B M a x im u m . . • R a tin g s sc yw Sym bol T eh V In P eak ID P I da T c = 2 5 °C TOR


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    60v-20A HBB1I15Ã DDDP23B 2SJ374 diode EGP 10 F20F6P 60v 10a p type mosfet diode EGP PDF

    LA3 DR2

    Abstract: vn 530 sp 31 x 132 THOMSON-CSF CCD 414 LEM DIODE tsc 429 7896A
    Text: TD2bô?2 00G223Ö h3^ • - TH 7896A- H _ High data rate version FULL FIELD CCD IMAGE SENSOR 1024x1024 PIXELS ■ Optimized for high data rate applications: minimum readout time = 28 ms (4 outputs).


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    00G223Ö 1024x1024 000E2Sb TH7896AVRH 7896AVR TH7896AGRCQ LA3 DR2 vn 530 sp 31 x 132 THOMSON-CSF CCD 414 LEM DIODE tsc 429 7896A PDF

    VN1220

    Abstract: No abstract text available
    Text: SUPERTEX INC 3 SE D • 07732^5 00QE27b ö M S T X T -3 9 -0 5 N-Channel Enhancement-Mode Vertical DMOS FETs 7 “- 39 - / / Ordering Information Standard Commercial Devices t O rd er N um b er / Package R d S<ON '□ ON) BV oqs (m ax) (m in) TO-39 TO-220


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    00QE27b VN1216N2 VN1220N2 O-220 VN1216N5 VN1220N5 VN1216ND VN1220ND Q227T T-39-05 VN1220 PDF

    Untitled

    Abstract: No abstract text available
    Text: +105°C Metallized Polypropylene Axial . Leaded Wrap and Fill Capacitors F o r al l g e n e r a l p u r p o s e f i l m c a p a c i t o r a p p l i c a t i o n s FEATURES Capacitance Range 0.001 pF to 10.0 pF Voltage Range 160WVDC to 630WVDC Good AC! pulse applications


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    160WVDC 630WVDC 473MPWS3M 33SMPWtC0K 683MPW160K 335MPW250K 683MPW258K 683MPW400K 33SMPW4MX 475MPW1B0K PDF

    Untitled

    Abstract: No abstract text available
    Text: S -29801 CMOS 768-bit bit sequential E2PROM T h e S-29801 is a 7 68 -b it sequential E 2 P R 0 M with internal address counter. A ddress input is the sequential increm ent system by CLK pin, and output is serial. C urrent consum ption is greatly red uced by


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    768-bit S-29801 MB8541 00225b D002257 PDF

    Untitled

    Abstract: No abstract text available
    Text: fc,BE D TOKO AMERICA/ SIGNAL • fiSHÖTl? GGG2SSD 74T « S P T SPT77SO 8-BIT, 500 MSPS FLASH A/D CONVERTER PRELIMINARY INFORMATION SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • 1:2 Demuxed ECL Compatible Outputs


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    SPT77SO SPT7750 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF20CA DIO DE T H R E E P H A S E S B R ID G E T Y P E (High Surge Current Capability) * UL;E76102(M) Power Diode Module D F20C A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­


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    DF20CA E76102 20Amp 550/600A 50/60H B-129 D0022flfl B-130 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static


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    EDI8L32512C S12Kx32 512Kx32 EDI8L32512C 1Mx16 EDBL325I2C PDF

    diode 66a

    Abstract: FCF06A60 GCF06A60 35NSEC
    Text: FAST RECOVERY DIODE GCF06A60 FCF06A60 6.6A/600V/trr : 35nsec FEATURES o Similar to TO-22ÛA Case 9 Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common o Ultra-Fast Recovery ° Low Forward Voltage Drop o High Surge Capability o 100 Volts through 600 Volts Types


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    A/600V/trr 35nsec GCF06A60 FCF06A60 O-220A bbl5123 diode 66a FCF06A60 35NSEC PDF

    diode T88

    Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
    Text: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30


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    IXTN79N20 OT-227 diode T88 f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 ixtn 79n20 79N20 425al PDF

    Untitled

    Abstract: No abstract text available
    Text: I////CATALYST • ■ Iff P relim inary S E M I C O N D U C T O R CAT24WC32/64 32K/64K-Bit Serial CMOS E2PROM FEATURES ■ 400 KHz l2C Bus Compatible* Self-Timed W rite Cycle with Auto-Clear ■ 1.8 to 6 Volt Operation Write Protect Feature ■ Low Power CMOS Technology


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    CAT24WC32/64 32K/64K-Bit 32-Byte CAT24WC32/64 24WC32 C32/64 24WC32KI-2 PDF

    IC-2526

    Abstract: No abstract text available
    Text: M IC2526 M iere! MIC2526 Dual USB High-Side Power Switch Advance Information General Description Features The MIC2526 is a dual integrated high-side power switch designed for self-powered and bus-powered Universal Serial Bus USB applications conforming to USB requirements.


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    IC2526 MIC2526 MIC2526 140mil 500mA MIC2526-2 0DG2S33 IC-2526 PDF