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    48N60P Search Results

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    48N60P Price and Stock

    Littelfuse Inc IXFK48N60P

    MOSFET N-CH 600V 48A TO264AA
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    DigiKey IXFK48N60P Tube 25
    • 1 -
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    • 100 $15.3388
    • 1000 $13.08296
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    Littelfuse Inc IXFN48N60P

    MOSFET N-CH 600V 40A SOT227B
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    DigiKey IXFN48N60P Tube 1
    • 1 $29.37
    • 10 $26.1
    • 100 $22.8276
    • 1000 $19.47952
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    Littelfuse Inc IXFR48N60P

    MOSFET N-CH 600V 32A ISOPLUS247
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    DigiKey IXFR48N60P Tube 30
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    Littelfuse Inc IXFX48N60P

    MOSFET N-CH 600V 48A PLUS247-3
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    DigiKey IXFX48N60P Tube 300
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    IXYS Corporation IXFN48N60P

    Discrete Semiconductor Modules 600V 48A
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    Mouser Electronics IXFN48N60P 41
    • 1 $29.37
    • 10 $23.09
    • 100 $22.64
    • 1000 $21.01
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    TTI IXFN48N60P Tube 300
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    TME IXFN48N60P 1
    • 1 $27.22
    • 10 $27.22
    • 100 $21.17
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    New Advantage Corporation IXFN48N60P 140 1
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    48N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48N60

    Abstract: sot 227b FS 8860 48N60P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 48N60P 48N60 sot 227b FS 8860 48N60P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID2 IXFK 48N60P IXFX 48N60P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 48N60P O-264

    48N60

    Abstract: ISOPLUS247 IXFR48N60P A160M
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 600 V = 32 A ≤ 160 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol


    Original     		PDF 48N60P ISOPLUS247TM 48N60 ISOPLUS247 IXFR48N60P A160M

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS on ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 48N60P

    48N60

    Abstract: IXFK 48n60p 48N60P PLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous


    Original     		PDF 48N60P O-264 O-264) 48N60 IXFK 48n60p 48N60P PLUS247

    48N60

    Abstract: 48N60P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 48N60P O-264 48N60 48N60P PLUS247

    48N60

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 48 A ≤ 135 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 48N60P OT-227 E153432 48N60

    IXFR48N60P

    Abstract: FS 8860 48n60 ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A ≤ 150 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 48N60P ISOPLUS247TM IXFR48N60P FS 8860 48n60 ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A Ω ≤ 150 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 48N60P ISOPLUS247TM

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p