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    44C10 Price and Stock

    Grayhill Inc 44C1082-1

    NUT KNURLED PLTD
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    DigiKey 44C1082-1 Bulk 10
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    Mouser Electronics 44C1082-1
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    Newark 44C1082-1 Bulk 10
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    Onlinecomponents.com 44C1082-1
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    Grayhill Inc 44C1082-3

    NUT KNURLED RWRKD PLTD 02775
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    DigiKey 44C1082-3 Bulk 10
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    Avnet Americas 44C1082-3 Bulk 10
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    Mouser Electronics 44C1082-3
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    Newark 44C1082-3 Bulk 10
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    Onlinecomponents.com 44C1082-3
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    Sager 44C1082-3 10
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    E-Switch Inc PR144C1000-104

    SWITCH PUSH SPST-NO 16A 125V
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    E-Switch Inc PR144C1000-134

    SWITCH PB SPST 16A 125V
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    DigiKey PR144C1000-134 Bulk 3,000
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    Newark PR144C1000-134 Bulk 3,000
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    Skyworks Solutions Inc SI4744-C10-GMR

    RF RX AM/FM 520KHZ-1.71MHZ 24QFN
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    DigiKey SI4744-C10-GMR Reel 2,500
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    Rochester Electronics SI4744-C10-GMR 5,000 1
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    Richardson RFPD SI4744-C10-GMR 1
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    Find more 44C10 price and stock on Findchips.com

    44C10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    44C1000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    44C1082-1 Grayhill Accessories, Switches, NUT KNURLED PLTD Original PDF
    44C1082-3 Grayhill Accessories, Switches, NUT KNURLED RWRKD PLTD 02775 Original PDF

    44C10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAB8051

    Abstract: No abstract text available
    Text: Security & Chip Card ICs SLE 44C10S 8-bit Security Controller with 9-Kbyte ROM, 256 byte RAM 1 Kbyte EEPROM and Sleep Mode Short Product Information 07.99 6/ &6 6KRUW 3URGXFW ,QIRUPDWLRQ 5HYLVLRQ +LVWRU\ &XUUHQW 9HUVLRQ  Previous Releases: 2.0 (06.98


    Original     		PDF 44C10S 44C10S SAB8051

    gsm coding in c for 8051 microcontroller

    Abstract: 44C10
    Text: ICs for Chip Cards SLE 44C10S 8-bit Security Controller with 9-Kbyte ROM, 256-byte RAM 1-Kbyte EEPROM and Sleep Mode Short Product Information 04.96 Important: Further information is confidential and on request. Please contact: Siemens Semiconductor Group in Munich, Germany,


    Original     		PDF 44C10S 256-byte 44C10S-x 44C10S 44C10. 44C10 gsm coding in c for 8051 microcontroller

    KMM581000An-8

    Abstract: No abstract text available
    Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


    OCR Scan     		PDF KMM581000AN 581000AN 81000A 44C1000AJ 20-pin 30-pin 130ns 581000AN- 150ns KMM581000An-8

    44c1000

    Abstract: No abstract text available
    Text: 44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tRAC • • • • • • • tcAC tRC 130ns KM 44C1000AL- 7 70 n s 2 0 ns KM44C1OOOAL- 8 80ns 2 0 ns 1 50 ns K M 4 4 C 1 0 0 0 A L -1 0


    OCR Scan     		PDF KM44C1000AL 44C1000AL- KM44C1OOOAL- 130ns 20-LEAD 44c1000

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s


    OCR Scan     		PDF KM44C1000ASL 44C1000ASL- 130ns 150ns 10OOASL-10 100ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns

    TCA 290

    Abstract: 41C1000 km44c1000aj 591000AN
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF KMM591000AN 000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22/iF TCA 290 41C1000 km44c1000aj

    41C1000

    Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
    Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22fiF 41C1000 KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7

    km44c1000aj

    Abstract: KMM581000AN
    Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


    OCR Scan     		PDF KMM581000AN 581000AN KMM581 44C1000AJ 20-pin 30-pin KMM581OOOAN km44c1000aj KMM581000AN

    KM44C1000J

    Abstract: KM44C1OOOZ KM44C1OOOJ electronics symbol
    Text: SAMSUNG SEMICONDUCTOR INC S3E D 7TbmMS D0GÔ420 7 ig Electronics SAMSUNG K M 4 4 C 1 0 0 0 J /Z r - ^ - 3 3 - I7 □ PRELIMINARY KM 44C1000J/Z Fast Page Mode 1 M X 4 Bit CMOS Dynamic RAM FEBRUARY 1990 GENERAL DESCRIPTION FEATURES The Samsung KM44C1OOOJ/Z is a high speed CMOS


    OCR Scan     		PDF 44C1000J/Z KM44C1OOOJ/Z KM44C1 20-LEAD KM44C1000J KM44C1OOOZ KM44C1OOOJ electronics symbol

    41C1000

    Abstract: KMM591000AN 41C1000BJ
    Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF MM591000AN 591000AN KMM591 44C1000AJ 20-pin 41C1000BJ 30-pin 22jiF KMM591OOOAN 41C1000 KMM591000AN

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E T> • 7=ib4mE 001331G 3SS ■ S M G K 44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1002A Is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.


    OCR Scan     		PDF 001331G KM44C1002A 44C1002A 44C1002A- 130ns 150ns 002A-10 180ns G013327

    44C1000AL

    Abstract: No abstract text available
    Text: 44C1000AL CMOS DRAM 1 M X 4 Bit C M O S Dynam ic R A M with F ast P age M o d e FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1000AL is a high speed CMOS 1 ,0 48 ,5 7 6 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1000AL 44C1000AL KM44C1000AL 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM44C1000ASL 130ns 10OOASL-10 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 44C1010A CMOS DRAM 1 M X 4 Bit C M O S Dynamic R A M with Fast Page M ode Write Per Bit M ode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C K M 4 4 C 1 0 1 0A- 7 70 ns 20 n s 13 0 n s K M 4 4 C 1 0 1 0A- 8 80ns 20 ns


    OCR Scan     		PDF KM44C1010A 100ns cycles/16m

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC


    OCR Scan     		PDF KM44C1000AL KM44C1OOOAL- 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e ran ge: tR A C tC A C tR C K M 44C1 000A S L- 7 7 0 ns 2 0 ns 1 3 0 ns K M 44C1 000A S L- 8 80ns 2 0 ns 1 5 0 ns K M 4 4 C 10OOASL-1 0


    OCR Scan     		PDF KM44C1000ASL KM44C1 000ASL- 000ASL-1 100ns cycles/256ms 70/80/100ns>

    Untitled

    Abstract: No abstract text available
    Text: 44C1002A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 A is a high speed C M OS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1002A 20-LEAD

    KM44C1003C

    Abstract: 44C1003 RAS 2410
    Text: CMOS DRAM 44C1003C/CL/CSL 1M x 4 B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: 44C1003C/CL/CSL-5 tR A C tC A C tR C 50ns 13ns 90ns 44C1003C/CL/CSL-6 60ns 15ns 110ns 44C1003C/CL/CSL-7 70ns 20ns 130ns


    OCR Scan     		PDF KM44C1003C/CL/CSL KM44C1003C/CL/CSL KM44C1003C/CI7CSL 24-LEAD 300MIL) 300MIL, KM44C1003C 44C1003 RAS 2410

    rb414

    Abstract: KM44C1003
    Text: 44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C HHHHHHI-INMHHM01 KM44C1003DT rb414 KM44C1003

    74118

    Abstract: ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D
    Text: 44C1003DJ CMOS DRAM E LE C T R O N IC S 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CA S C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Access time -5, -6 or -7 , powér


    OCR Scan     		PDF KM44C 1003D 16Mx4, 512Kx8) KM44C1003DJ 7Tb4142 003Mlfi^ 74118 ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C120CJ/CT KMM364C120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM based on 1M x4,1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C120C is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C120C consists of sixteen CMOS


    OCR Scan     		PDF KMM364C120CJ/CT KMM364C120CJ/CT 1Mx64 KMM364C120C KMM364C120C-7 300mil 48pin

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: 44C1012A-7 44C1012A-8 44C1012A-10 tnAC tcAc I rc


    OCR Scan     		PDF 7Tb414E KM44C1012A KM44C1012A-10 130ns KM44C1012A-8 KM44C1012A-7 150ns KM44C1012A 180ns

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM44C1000ASL 130ns 150ns 180ns 20-LEAD