KMM581000N8
Abstract: No abstract text available
Text: KMM581000N DRAM MODULES 1 M x 8 D R A M S IM M M em ory M odule FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs KM44C1000J-1M x 4 in 20-pin SOJ package mounted
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KMM581000N
150ns
180ns
KMM581000N
KM44C1000J-1M
20-pin
30-pin
22/iF
KMM581000N8
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KMM581000N8
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs
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KMM581000N
0Q10434
KMM581000N
KM44C1000J-1M
20-pin
30-pin
KMM581000N-8
150ns
KMM581000N-10
KMM581000N8
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
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KM41C1000AJ-1M
Abstract: km41c1000aj KMM591000N
Text: KMM591000N DRAM MODULES 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM591000N is a 1M bit x 9 D ynam ic RAM high de nsity m em ory m odule. The Sam sung K M M 5 9 1 0 0 0 N c o n s is t o f tw o 4M b it D R A M s
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KMM591000N
KMM591000N
KM44C1000J-1M
20-pin
KM41C1000AJ-1M
30-pin
KMM591000N-8
KMM591000N-10
km41c1000aj
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KM44C1000J
Abstract: KM44C1OOOZ KM44C1OOOJ electronics symbol
Text: SAMSUNG SEMICONDUCTOR INC S3E D 7TbmMS D0GÔ420 7 ig Electronics SAMSUNG K M 4 4 C 1 0 0 0 J /Z r - ^ - 3 3 - I7 □ PRELIMINARY KM 44C1000J/Z Fast Page Mode 1 M X 4 Bit CMOS Dynamic RAM FEBRUARY 1990 GENERAL DESCRIPTION FEATURES The Samsung KM44C1OOOJ/Z is a high speed CMOS
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44C1000J/Z
KM44C1OOOJ/Z
KM44C1
20-LEAD
KM44C1000J
KM44C1OOOZ
KM44C1OOOJ
electronics symbol
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Untitled
Abstract: No abstract text available
Text: j SAMSUNG ELECTRONICS INC 42E D • TTbMlME 00104SG 4 KMM591000N DRAM MODULES 1 M x 9 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION ’" ' The Samsung KMM591000N is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591000N consist of. two 4M b it DRAMs
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00104SG
KMM591000N
KMM591000N
KM44C1000J-1M
20-pin
KM41C1000AJ-1M
20-pln
30-pin
150ns
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C1000BJ
KM44C256BP
KM41C1000BP
KM41C1001BP
KM44C256BJ
km4164
KM44C1000LJ
KM41C464Z
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