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    KMM581000An-8

    Abstract: No abstract text available
    Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


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    KMM581000AN 581000AN 81000A 44C1000AJ 20-pin 30-pin 130ns 581000AN- 150ns KMM581000An-8 PDF

    41C16000

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


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    16000/T 16Mx8 KMM5816000/T 5816000/T 41C16000/T 24-pin 30-pin KMM5816000-6 110ns KMM5816000-7 41C16000 PDF

    KMM581000N8

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs


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    KMM581000N 0Q10434 KMM581000N KM44C1000J-1M 20-pin 30-pin KMM581000N-8 150ns KMM581000N-10 KMM581000N8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


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    7Tfcj4142 KMM581000AN 581000AN 81000A KM44C1OOOAJ 20-pin 30-pin 581000AN- 130ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b4E » • 7^4142 KMM581020AN GG14454 455 ■ SM6K DRAM MODULES 1 M x 8 DRAM SIMM Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: KMM581020AN-7 • • • » • • • tiuc tcAc I rc


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    KMM581020AN GG14454 KMM581020AN-7 130ns KMM581020AN-8 150ns KMM581020AN-10 100ns 180ns cycles/128ms PDF

    KMM581000N8

    Abstract: No abstract text available
    Text: KMM581000N DRAM MODULES 1 M x 8 D R A M S IM M M em ory M odule FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs KM44C1000J-1M x 4 in 20-pin SOJ package mounted


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    KMM581000N 150ns 180ns KMM581000N KM44C1000J-1M 20-pin 30-pin 22/iF KMM581000N8 PDF

    LN65V

    Abstract: No abstract text available
    Text: DRAM MODULES KMM581020AN 1 M x 8 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020AN is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581020AN co n sist o f tw o 4M b it DRAMs


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    KMM581020AN KMM581020AN KM44C1020ALJ 20-pin 30-pin 22/iF KMM581020AN-7 LN65V PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM581000C DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung KMM581000C consist of eight KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    KMM581000C KMM581000C-6 KMM581000C-7 KMM581000C-8 110ns 130ns 150ns KMM581000C KM41C1000C PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5816000A/AT Fast Page Mode / 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package / GENERAL DESCRIPTION FEATURES The Samsung KMM5816000A is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816000A consists of eight CMOS


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    KMM5816000A/AT 16Mx8 KMM5816000A 16Mx1bit 24-pin 30-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5816000A/AT Fast Page Mode 16Mx8 DRAM SIM M , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5816000A is a 16M bit x 8 Dynamic RAM high density memory module The • Performance Range.


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    KMM5816000A/AT 16Mx8 KMM5816000A 24-pin 30-pin KMM5016OOOA PDF

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


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    KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7 RbM lM2 0 0 1 S 224 KMM5816100/T 343 I SM6 K DRAM MODULES 16 M x8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5816100/T is a 16M bitx8 Dynamic RAM high density memory module. The Samsung


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    KMM5816100/T KMM5816100/T KM41C16000/T 24-pin 30-pin KMM5816100-6 110ns KMM5816100-7 130ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b?E D • KMM581000C 001 S 02 M Tfll S N G IC DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module The Samsung


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    KMM581000C KMM581000C KM41C1000C 20-pin 30-pin 110ns KMM581000C-7 130ns KMM581000C-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


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    KMM581000B 581000B KMM581 KM41C1OOOBJ 20-pln 30-pin 581000B- 130ns 150ns PDF

    KMM581000AN

    Abstract: 581000A KMM581000A
    Text: DRAM MODULES KMM581000AN 1M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM581 OOOAN- 7 • • • • • • • tR A C tC A C tR C 70ns 20ns 130ns KMM581 OOOAN- 8 80ns 20ns 150ns KMM581 OOOAN-10 100ns 25ns 180ns Fast Page Mode operation


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    KMM581000AN KMM581 OOOAN-10 100ns 130ns 150ns 180ns 581000AN KMM581000AN 581000A KMM581000A PDF

    KMM581000BN-6

    Abstract: ic sc 4145 KM44C1000BJ KMM581000BN
    Text: SAMSUNG EL E C T R O N I C S INC b?E D • 7Tbm4E KMM581000BN DQ15ü7b 3ÖT M S I I G K DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung


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    KMM581000BN KMM581000BN-6 KMM581000BN-7 KMM581000BN-8 110ns 130ns 150ns KMM581000BN KM44C1000BJ ic sc 4145 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5816000/T DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The S am sung KMM5816000/T is a 16M bit x 8 D ynam ic RAM high d e nsity m em ory m odule. The S am sung KMM5816000/T con sist o f eight KM41C16000H' DRAMs in 24-pin SOJ/TSOP II package m o unte d on a 30-pin


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    KMM5816000/T 16Mx8 KMM5816000-6 KMM5816000-7 KMM5816000-8 KMM5816000/T KM41C16000H' 24-pin 30-pin PDF

    KMM581000A

    Abstract: KM41C1000AJ KMM481000A-8
    Text: KMM481000A/KMM581000A MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung KMM481000A and KMM581000A are 1 M x 8 dynamic RAM high density memory modules.


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    KMM481000A/KMM581000A KMM481000A-8 KMM581000A-8 KMM481000A-10 KMM581000A-10 150ns 180ns 180ns KMM481000A KMM581000A KM41C1000AJ PDF

    km44c1000aj

    Abstract: KMM581000AN
    Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


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    KMM581000AN 581000AN KMM581 44C1000AJ 20-pin 30-pin KMM581OOOAN km44c1000aj KMM581000AN PDF

    km44c1000aj

    Abstract: 581000A
    Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package


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    KMM581000AN 130ns 150ns 180ns KMM581 30-pin KMM581OOOAN KM44C1000AJ 20-pin 581000A PDF

    64 mega bit ram simm

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte Preliminary KMM5816000AK Fast Page Mode 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KM M 5816000AK is a 16M bit x 8 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The


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    KMM5816000AK 16Mx8 5816000AK 16Mx1 24-pin 816000A KMM5016OOOAK KMM5016QOOAK 64 mega bit ram simm PDF

    KMM581000BN

    Abstract: KMM581000BN-7 KM44C1000BJ KMM581000BN-6 KMM581000
    Text: KMM581000BN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000BN co n sist o f two 4M b it DRAMs KM44C1000BJ 1 M x4 in 20-pin SOJ package mount­


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    KMM581000BN KMM581000BN KM44C1000BJ 20-pin 30-pin 22juF KMM581000BN-6 KMM581000BN-7 KMM581000 PDF

    SS1000

    Abstract: KMM581000B
    Text: KMM581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    KMM581000B 581000B KMM581OOOB KM41C1OOOBJ 20-pin 30-pin 581000B- KMM581 SS1000 KMM581000B PDF

    44C10

    Abstract: No abstract text available
    Text: DRAM MODULE 1 Mega Byte KMM581000CN Fast Page Mode 1Mx8 DRAM SIM M , 1K Refresh , 5V G EN E R A L DES C R IPTIO N The Sam sung K M M 581000C N is a 1M bit x 8 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The S am sung KM M 581000C N consists of tw o CMOS


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    KMM581000CN 581000C 20-pin 130ns 150ns 44C10 PDF