SEIKO MS621
Abstract: RB414 ms614s XH414H IV01E SEIKO INSTRUMENTS ms920 XH414H MS920S FL27E MS621 battery ms920 xh414
Text: Network Components Business Unit Micro Batteries Product Catalogue CMOS IC Quartz Crystals Micro Batteries Materials Liquid Crystal Display Custom LCD Module October 2002 Precautions for Your Safety SII Lithium-ion rechargeable batteries MS, RB, HB, TS contain flammable organic solvents. For your
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CAB0210EJ0055-10/C
SEIKO MS621
RB414
ms614s
XH414H IV01E
SEIKO INSTRUMENTS ms920
XH414H
MS920S FL27E
MS621 battery
ms920
xh414
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Untitled
Abstract: No abstract text available
Text: 3 Fiber Outside Plant Products Fiber Optic Closures, Trays and Accessories Fiber Optic Splice Case 2178 Series and Accessories 230 Fiber Optic Splice Closure 2177 Series and Accessories 243 Fiber Optic Dome Splice Closure FD Series 244 SLiC Fiber Aerial Closure and Terminals
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RTE46
RTE62
RTE36-8
RTE46-8
RTE62-8
CSSC20-M100
100/pkg.
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E ]> n 7^4142 KM23C2100 0011124 ? ESSM6K CMOS MASK ROM 2M-BH 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization Byte M ode: 262,144 x 8 ROM T h e K M 23C 2100 is a fully s tatic m as k program m able
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KM23C2100
8/128K
150ns
2100F
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rb414
Abstract: KM44C1003
Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power
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KM44C
HHHHHHI-INMHHM01
KM44C1003DT
rb414
KM44C1003
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RB414
Abstract: B4145 KM44V4004BK
Text: KM44V4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44V4004BK
16Mx4,
512Kx8)
RB414
B4145
KM44V4004BK
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KMM366S204BTN-G0
Abstract: KMM366S204BTN-G2 cdq40 KMM366S204BTN
Text: KMM366S204BTN NEW JEDEC SDRAM MODULE KMM366S204BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S204BTN is a 2M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S204BTN
KMM366S204BTN
2Mx64
1Mx16,
400mil
168-pin
KMM366S204BTN-G8
KMM366S204BTN-G0
KMM366S204BTN-G2
cdq40
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Untitled
Abstract: No abstract text available
Text: KS0123 Multimedia ELECTRONICS DIGITAL VIDEO ENCODER The KS0123 multi - standard video encoder converts CCIR 656 8 - bit multiplexed digital component video into analog baseband signals. It output ccomposite video C V BS and S - Video simultaneoulsy at three
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KS0123
KS0123
33b4b
32-PLCC-REC.
44-PLCC-SQ.
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Untitled
Abstract: No abstract text available
Text: K S57C 3016 4-BIT CMOS Microcontroller ELEC TR ONIC S Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digit LCD
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KS57C3016
up-to-16-digit
100-pin
KS57C3016â
D02fei73Q
71b4142
002b731
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SSS4N60
Abstract: SSS4N55
Text: N-CHANNEL POWER MOSFETS SSS4N60/55 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSS4N60/55
SSS4N60
SSS4N55
to-220f
Tbm42
GD2fl471
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