K6R4004C1D-JC
Abstract: K6R4004V1D K6R4016V1D-J
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4004C1D-JC
K6R4004V1D
K6R4016V1D-J
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Untitled
Abstract: No abstract text available
Text: PcRam TS1M9360 Description Features The TS1M9360 is a 1M by 9-bit dynamic RAM • 1,048,576-word by 9-bit organization. module with 2pcs of 1Mx4 and 1pc of 1Mx1 DRAMs • Fast Page Mode operation. assembled on the printed circuit board. • Single +5.0V ± 10% power supply.
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TS1M9360
TS1M9360
576-word
TS1M9360me
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we 510
Abstract: UG9M
Text: UG9M13621DBG T 4M Bytes (1M x 36 ) DRAM w/Parity 72Pin SIMM based on 1M X 4 General Description Features The UG9M13621DBG(T) is a 1,048,576 bits by 36 SIMM module.The UG9M13621DBG(T) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package, and 1 pc of 1Mx4 Quad-CAS
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UG9M13621DBG
72Pin
300mil
1000mil)
we 510
UG9M
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1Mx4
Abstract: No abstract text available
Text: UG8M13201DBJ N 4M Bytes (1M x 32 ) DRAM 72Pin SIMM based on 1M X 4 General Description Features The UG8M13201DBJ(N) is a 1,048,576 bits by 32 SIMM module.The UG8M13201DBJ(N) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package,mounted on a 72 Pin unbuffered
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UG8M13201DBJ
72Pin
300mil
500mil)
D661-2788
1Mx4
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Untitled
Abstract: No abstract text available
Text: K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I PRELIMINARY CMOS SRAM Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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K6R4004C1C-C,
K6R4004C1C-E,
K6R4004C1C-I
160mA
155mA
150mA
190mA
185mA
180mA
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K6R4008V1D
Abstract: K6R4016C1D 44-TSOP2
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4008V1D
K6R4016C1D
44-TSOP2
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Untitled
Abstract: No abstract text available
Text: SMART SM5360140U1EUUU Modular Technologies November 12, 1996 4MByte 1M x 36 DRAM Module - 1Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM536014001EUUU SM536014011EUUU SM536014081EUUU SM536014091EUUU Standard
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SM5360140U1EUUU
72-pin
60/70/80ns
300mil
SM536014001EUUU
SM536014011EUUU
SM536014081EUUU
SM536014091EUUU
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Untitled
Abstract: No abstract text available
Text: IC41UV4105 Document Title 1Mx4 bit Dynamic RAM with Fast Page Mode Revision History Revision No History Draft Date Remark 0A 0B Initial Draft 1.Change for VCC 2.6±0.3 to 2.6±0.2V August 9,2001 August 24,2001 Preliminary The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
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IC41UV4105
DR020-0B
IC41UV4105-50J
IC41UV4105-50T
IC41UV4105-70J
IC41UV4105-70T
IC41UV4105-100J
IC41UV4105-100T
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Untitled
Abstract: No abstract text available
Text: SMART SM5331000 Modular Technologies February 12, 1997 4MByte 1M x 33 DRAM Module - 1Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM Operating Voltage :
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SM5331000
72-pin
60/70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
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K6R4016V1D-J
Abstract: No abstract text available
Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001
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K6R4004C1D
115mA
100mA
32-SOJ-400
K6R4016V1D-J
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Preliminary CMOS SRAM K6R4004C1C-C, K6R4004C1C-I Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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K6R4004C1C-C,
K6R4004C1C-I
160mA
155mA
150mA
190mA
185mA
180mA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Preliminary CMOS SRAM KM644002C, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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KM644002C,
KM644002CI
32-SOJ-400
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HY514400A
Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT
Text: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design
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HY514400A
/RAS-on28ms
10/Jan
HY514400A
HY514400AJ
HY514400ALJ
HY514400ALT
HY514400AT
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taa 440
Abstract: No abstract text available
Text: SMART SM5320140U1XUUU Modular Technologies November 19, 1996 4MByte 1M x 32 DRAM Module - 1Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM532014001XUUU SM532014011XUUU SM532014081XUUU SM532014091XUUU Standard
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SM5320140U1XUUU
72-pin
SM532014001XUUU
SM532014011XUUU
SM532014081XUUU
SM532014091XUUU
60/70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
taa 440
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Untitled
Abstract: No abstract text available
Text: SMART SM5320140U1XSUU Modular Technologies May 13, 1996 4MByte 1M x 32 DRAM Module - 1Mx4 based 72-pin SODIMM Features Part Numbers • • • • • • • • • • • SM532014001XSUU SM532014011XSUU SM532014081XSUU SM532014091XSUU Standard :
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SM5320140U1XSUU
72-pin
SM532014001XSUU
SM532014011XSUU
SM532014081XSUU
SM532014091XSUU
60/70/80ns
300mil
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM KM64V4002B/BL, KM64V4002BI/BLI Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark
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KM64V4002B/BL,
KM64V4002BI/BLI
32-TSOP2-400F
047MAX
002MIN
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44-TSOP2
Abstract: K6R4004C1D
Text: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary
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K6R4004C1D
115mA
100mA
32-SOJ-400
44-TSOP2
K6R4004C1D
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tb41
Abstract: No abstract text available
Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The
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KMM5362203AW/AWG
KMM5362203AW/AWG
2Mx36
1Mx16
KMM5362203AW
KMM5362203AW
cycles/16
5362203AW
tb41
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Untitled
Abstract: No abstract text available
Text: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write
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S4C14405
26/20-pin
AS4C14405-60JC
26/20-pin
0Q34HC
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Untitled
Abstract: No abstract text available
Text: KM644002, KM644002E, KM644002I CMOS SRAM Document Title 1Mx4 Bit with OË High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0
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KM644002,
KM644002E,
KM644002I
KM644002I
KM644002E
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KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
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KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
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km44c1003cj
Abstract: No abstract text available
Text: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS
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KMM5361203AW/AWG
KMM5361203AW/AWG
1Mx36
1Mx16
KMM5361203AW
42-pin
24-pin
72-pin
KMM5361233AW
km44c1003cj
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Untitled
Abstract: No abstract text available
Text: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY514400B
HY514400B
4b750flfl
1AC11-10-MAY95
HY514400BJ
HY514400BLJ
HV514400BSLJ
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A19T
Abstract: No abstract text available
Text: Prelim inary CMOS SRAM KM 64V4002B/BL, KM 64V4002B/BLI D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (3.3V Operating), Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory Draft Data R em ark
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KM64V4002B/BL,
KM64V4002B/BLI
32-SOJ-400
A19T
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