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    3N128 Search Results

    3N128 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SIT5711AI-KX-33N-12.800000 SiTime 1 to 60 MHz, Stratum 3E OCXO Datasheet
    SIT9366AI-2B1-33N12.880000 SiTime 1 to 220 MHz, Low Jitter Differential XO Datasheet
    SiT8008BI-32-33N-12.800000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SF Impression Pixel

    3N128 Price and Stock

    SiTime Corporation SIT5711AI-KX-33N-12.800000X

    Oven Controlled Crystal Oscillator (OCXO) 12.8MHz ±0.008ppm 3.3V LVCMOS - Tape and Reel (Alt: SIT5711AI-KX-33N-1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT5711AI-KX-33N-12.800000X Reel 250 32 Weeks 250
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    SiTime Corporation SIT1408BIF11-33N-12.800000D

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 20ppm, 3.3V, 12.8MHz, OE, T&R - Tape and Reel (Alt: SIT1408BIF11-33N-1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT1408BIF11-33N-12.800000D Reel 12 Weeks 3,000
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    SiTime Corporation SIT1418BA-23-33N-12.800000D

    OSCILLATOR, SIT1418, -40 to 125C, 3225, 50ppm, Default Dr Str, 3.3V, 12.8MHz, OE, T&R - Tape and Reel (Alt: SIT1418BA-23-33N-1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT1418BA-23-33N-12.800000D Reel 3,000
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    Delkin Devices BE64TRDLE-3N128-D

    - Trays (Alt: BE64TRDLE-3N128-D)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BE64TRDLE-3N128-D Tray 15
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    SiTime Corporation SIT1421BM-22-33N-128.000000E

    OSCILLATOR, SIT1421, -55 to 125C, 3225, 25ppm, Default Dr Str, 3.3V, 128MHz, ST, T&R - Tape and Reel (Alt: SIT1421BM-22-33N-1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT1421BM-22-33N-128.000000E Reel 1,000
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    3N128 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    3N128 Crystalonics Transistor Data Book 1976 Scan PDF
    3N128 General Electric Silicon MOS Transistor Scan PDF
    3N128 General Electric Silicon MOS transistor. Scan PDF
    3N128 General Instrument Short Form Data 1976 Short Form PDF
    3N128 Motorola The European Selection Data Book 1976 Scan PDF
    3N128 Motorola European Master Selection Guide 1986 Scan PDF
    3N128 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N128 Unknown Shortform Electronic Component Datasheets Short Form PDF
    3N128 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N128 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N128 On Semiconductor TRANS MOSFET N-CH 20V 0.05A 3TO-206AF Rail Scan PDF
    3N128 On Semiconductor SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR Scan PDF

    3N128 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N128

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 3N128 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHP amplifier and oscillator applications in communications equipment.


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    PDF 3N128 3N128

    d 2689

    Abstract: transistor d 2689 3N128
    Text: 3N128 Silicon MOS Transistor. 26.89 Transistors MOSFETs and TempFETs MOSFETs . Page 1 of 1 Enter Your Part # Home Part Number: 3N128 Online Store 3N128 Diodes Silicon MOS Transistor. Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 3N128 3N128 com/3n128 d 2689 transistor d 2689

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    LM1011N

    Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
    Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44


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    PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 LM1011N JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n

    jrc386d

    Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
    Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50


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    PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 jrc386d SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303

    jrc386d

    Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
    Text: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42


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    PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 jrc386d LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    2N4351 MOTOROLA

    Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
    Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132


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    PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76

    3n128

    Abstract: No abstract text available
    Text: T Y P E 3N128 N -C H A N N E L IN S U LA T ED -G A T E D E P LE T IO N -T Y P E F IE LD -E FF E C T TR A N S IS TO R B U L L E T IN N O . D L S 7 3 1 2 0 0 6 . M A R C H 1973 DEPLETION-TYPE MOS SILICON TRANSISTOR For Use in VHF Amplifier Applications to 300 MHz


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    PDF 3N128

    3N128

    Abstract: No abstract text available
    Text: Order this document by 3N128/D MOTOROLA M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHF amplifier and oscillator applications in com­ munications equipment.


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    PDF 3N128/D_ 3N128 5000/imhos 3N128/D 3N128/D 3N128

    maximum drain voltage of FET 3N143

    Abstract: 3N128 equivalent 3N128 FET 3N143 RCA-3N128 AN-3193 rca an3193 TA2840 "rca application note" RCA Solid State amplifier
    Text: G E S OLID STATE 3875081 01 G E SO LID STATE DE § 3 0 7 5 0 0 1 01E 14.984 0014^04 5 Dj Small-Signal M „ _ 3N128, 3N143 Silicon MOS Transistor For Amplifier Mixer & Oscillator Applications in Military &


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    PDF 00l4cifi4 3N128, 3N143 3N143 3N128 maximum drain voltage of FET 3N143 3N128 equivalent FET 3N143 RCA-3N128 AN-3193 rca an3193 TA2840 "rca application note" RCA Solid State amplifier

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    L43C

    Abstract: teledyne philbrick 1430 TELEDYNE PHILBRICK 1435 A/SMD l43c
    Text: WTELECYNE PHILBRICK I 1430 Fast Settling FET Input Operational Amplifier The 1430 is a high speed, precision, jiybrkj operational amplifier that combines fast settling times, low bias cur­ rents, high slew rate, wide bandwidth, and good phase margin. A guaranteed settling time of 200nsec (for a full


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    PDF 200nsec L43C teledyne philbrick 1430 TELEDYNE PHILBRICK 1435 A/SMD l43c

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    MFE3004

    Abstract: 3n128
    Text: motorola sc -c d i o d e s / o p t o j - 34 DE |b3fc,75SS 003ÔD40 6367255 MOTOROLA SC DIODES/OPTO 34-C 38040 FIIELD-EFFÉCT TR A N SISTO R S DICE (continued) T - D “ 2- 5 " 3C128 DIE NO. LINE SOURCE — DFM112 This die provides performance equal to or better than that of


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    PDF DFM112 3N128 MFE3004 MFE3005 3C128

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    P-Channel Depletion Mosfets

    Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
    Text: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,


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    PDF 2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484

    Untitled

    Abstract: No abstract text available
    Text: WTELEDYNE COMPONENTS 1430 FAST SETTLING, FET INPUT OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • Settling Time to ±0.01% 10V step 200 ns Max ■ Operating Temperature. -55°C to +125°C ■ Gain Bandwidth Product. 100 MHz


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    PDF 50V/ns 200nsec 600ns. 200ns. 14304HR

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    SN76477

    Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
    Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p


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    PDF 2114L 6116P3 6116LP3 AY-3-1270 AY-3-1350 AY-3-8910 AY-3-8912 AY-5-1230 CA3080E CA3130E SN76477 TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


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    PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    3N128

    Abstract: 6007A
    Text: TEL EDYNE COMPONENTS 3bE D • fiR17t>D2 DGÜ7SÔL ^ «TSC WTELEDYNE COMPONENTS 1430 FAST SETTLING, FET INPUT OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ The 1430 isa high speed, precision, FET input hybrid op amp that features fast settling time, low bias current, high


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    PDF fiR17t 200nsec 600ns. 200ns. Tooperatethe1430or1430 1250C, 3N128 6007A