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    2SK385 Search Results

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    2SK385 Price and Stock

    Rochester Electronics LLC 2SK3850-TL-E

    NCH 10V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3850-TL-E Bulk 650
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    Rochester Electronics LLC 2SK3856-5-TB-E

    NCH 30MA 15V MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3856-5-TB-E Bulk 3,806
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    onsemi 2SK3850-TL-E

    2SK3850 - N-Channel 10V Drive Series '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK3850-TL-E 39,900 1
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    onsemi 2SK3856-5-TB-E

    2SK3856 - N-Channel 30MA 15V MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK3856-5-TB-E 144,000 1
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    2SK385 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK385 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK385 Toshiba Original PDF
    2SK385 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK385 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK385 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK385 Unknown Scan PDF
    2SK385 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK385 Unknown FET Data Book Scan PDF
    2SK3850 Sanyo Semiconductor General-Purpose Switching Device Applications Original PDF
    2SK3851 Sanken Electric MOSFET Original PDF
    2SK3851 Sanken Electric Devices for Automotive Application Original PDF
    2SK385/1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK385/2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK385/3 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK385/4 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK385/5 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3856 Sanyo Semiconductor 2SK3856 Original PDF
    2SK3856 Sanyo Semiconductor High-Frequency MOSFETs Original PDF
    2SK385/6 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3857TK Toshiba Silicon N Channel Junction Type For ECM Original PDF

    2SK385 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj


    Original     		PDF 2SK3857TV

    Untitled

    Abstract: No abstract text available
    Text: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK3857TK 100mV

    Untitled

    Abstract: No abstract text available
    Text: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 • VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK3857MFV

    2SK3857MFV

    Abstract: No abstract text available
    Text: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK3857MFV 2SK3857MFV

    MARKING KD

    Abstract: MA 7905 2SK3856
    Text: 2SK3856 Ordering number : ENN7905B N-Channel Silicon MOSFET 2SK3856 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		PDF 2SK3856 ENN7905B MARKING KD MA 7905 2SK3856

    2SK3857TV

    Abstract: No abstract text available
    Text: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK3857TV 2SK3857TV

    2SK3857CT

    Abstract: F 2.2K IDSS
    Text: 2SK3857CT 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3857CT エレクトレットコンデンサマイクロフォン用 Unit: mm ・CSP パッケージのため小型マイクロフォンに最適 ・感度が高い ・減電圧特性に優れる


    Original     		PDF 2SK3857CT 2SK3857CT F 2.2K IDSS

    2sk3856

    Abstract: 79053 2SK38 79051
    Text: 2SK3856 注文コード No. N 7 9 0 5 2SK3856 N チャネル MOS 形シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である。 ・電力利得が大きい。 ・帰還容量が小さい。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF 2SK3856 100MHz 2SK3856 IT06826 IT06828 IT06829 79053 2SK38 79051

    20-THD

    Abstract: 2SK3857MFV
    Text: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK3857MFV 100mV 20-THD 2SK3857MFV

    2SK3857TK

    Abstract: ecm circuit
    Text: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3857TK For ECM 0.22±0.05 Rating Unit VGDS -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range


    Original     		PDF 2SK3857TK 2SK3857TK ecm circuit

    Untitled

    Abstract: No abstract text available
    Text: 2SK3856 Ordering number : ENN7905A N-Channel Silicon MOSFET 2SK3856 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		PDF 2SK3856 ENN7905A

    2SK3856

    Abstract: D2006
    Text: 2SK3856 注文コード No. N 7 9 0 5 B 三洋半導体データシート 半導体ニューズ No.N7905A とさしかえてください。 2SK3856 N チャネル MOS 型シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である。


    Original     		PDF 2SK3856 N7905A 100MHz IT06826 IT06828 IT06829 2SK3856 D2006

    2SK3857TV

    Abstract: No abstract text available
    Text: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm 0.8±0.1 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125


    Original     		PDF 2SK3857TV 2SK3857TV

    2SK3857TK

    Abstract: No abstract text available
    Text: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100


    Original     		PDF 2SK3857TK 2SK3857TK

    Untitled

    Abstract: No abstract text available
    Text: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current


    Original     		PDF 2SK3857TV

    2SK3857TK

    Abstract: No abstract text available
    Text: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range


    Original     		PDF 2SK3857TK 2SK3857TK

    2N4351 MOTOROLA

    Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
    Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132


    Original     		PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76

    Untitled

    Abstract: No abstract text available
    Text: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK3857MFV

    2sk3856

    Abstract: 7905 marking kd
    Text: 2SK3856 Ordering number : ENN7905 N-Channel Silicon MOSFET 2SK3856 FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		PDF 2SK3856 ENN7905 2sk3856 7905 marking kd

    a1276

    Abstract: transistor a1276 2sk3852 K3852 ENA1276 A12765 yoshimura
    Text: 2SK3852 Ordering number : ENA1276 Preliminary SANYO Semiconductors DATA SHEET 2SK3852 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK3852 ENA1276 PW10s, A1276-5/5 a1276 transistor a1276 2sk3852 K3852 ENA1276 A12765 yoshimura

    2SK3857TK

    Abstract: No abstract text available
    Text: 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK3857TK 2SK3857TK

    2SK3857TK

    Abstract: No abstract text available
    Text: 2SK3857TK 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3857TK エレクトレットコンデンサマイクロフォン用 単位: mm 0.22±0.05 1.2±0.05 0.32±0.05 ・0.395mm 厚薄型パッケージのため薄型マイクロフォンに最適


    Original     		PDF 2SK3857TK 395mm 2SK3857TK

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    2SK385

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE 7T-MOS 2SK385 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 20.5MAX. I FEATURES: . High Breakdown. Voltage : V(jjf>)Dsg=400V


    OCR Scan     		PDF t100nA 2SK385 2SK385