Untitled
Abstract: No abstract text available
Text: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB
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EDI7P16xxxA
220MB
110MB
car04
EDI7P16xxxATA00Z
EDI7P16xxxCFA00Z
175MB
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Untitled
Abstract: No abstract text available
Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo
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EDI7F8512C
512Kx8
EDI7F8512C
128Kx8
3E30114
EDI7F8512C120BSC
EDI7F8512C150BSC
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a719
Abstract: EDI411024C 150ni 15trc 1MX1
Text: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power
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EDI411024C
EDI4110240
T-46-23-15
EDI411024Ã
Noie27
EDI411024C
a719
150ni
15trc
1MX1
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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D012
Abstract: D019 D020 D023 EDI8F32128C t462
Text: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is
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323G114
EDI8F32128C
128Kx32
EDI8F32128Cisahighspeed4megabitStatic
128Kx8
EDI8F32128C
EDI8F32128C15MMC
EDISF32128C20MMC
EDI8F32128C25MMC
D012
D019
D020
D023
t462
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S0014
Abstract: TME 57 256KX16 A1526
Text: ^EDI EDI8F16258C afCTOONC OESGNS. NC '256Kxie SRAM Module 256KX16 Static RAM CMOS Module Features 256Kx16 bit CMOS Static Random Access Memory • Access Times 70,85, and 100ns • Data Retention Function EDI8F16258LP • TTL Compatible Inputs and Outputs
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EDI8F16258C
56Kx1S
256Kx16
100ns
EDI8F16258LP)
EDI8F16258C
4096K
128Kx8
S0014
TME 57
A1526
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Untitled
Abstract: No abstract text available
Text: ^EDI _ ELECTRO NIC DESIGNS IN C EDI7F32128C High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Module r a iy ia iM ï Features The EDI7F32128C is a 5V-0nly In-System Programmable 128Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as
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EDI7F32128C
128Kx32
EDI7F32128C
150ns
128Kx8
OIAia0020821
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Untitled
Abstract: No abstract text available
Text: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,
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EDI9F3420C
128Kx16
32Kx16
120ns
150ns
EDI9F3420C
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Untitled
Abstract: No abstract text available
Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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EDI784MS
EDI784MSV
528-byte
250ms
funI784MSV
EDI784MSV50BB
ED1784MSV50FB
EDI784MSV50BB
EDI7MMSV50BC
300MW
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Untitled
Abstract: No abstract text available
Text: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This
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EDI8F24129C
128KX24
EDI8F24129C
128Kx8
0001b
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TME 57
Abstract: a6353 355A4 a2361
Text: m x EDI9F33256C 256Kx32 SRAM Module ELECTRONIC DESIGNS NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack
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EDI9F33256C
256Kx32
EDI9F33256C
256Kx4
EDI9F33256C20MZC
EDI9F33256C25MZC
TME 57
a6353
355A4
a2361
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DODI151
Abstract: EDI8M8512C EDI8M8512LP
Text: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic four mega
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EDI8M8512C
512Kx8
EDI8M8512C
4096K
128Kx8
the128Kx8
EDI8M8512LP)
EDI8M8512C85C6B
EDI8M8512C85C6I.
DODI151
EDI8M8512LP
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EDI8L3265C
Abstract: OQ23 "Electronic designs inc"
Text: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array
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EDI8L3265C
64Kx32
EDI8L3265C
128Kx16
EDI8L3265C,
EDI8L3265C12AC
EDI8L3265C15AC
EDI8L3265C17AC
EDI8L3265C20AC
OQ23
"Electronic designs inc"
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20E1
Abstract: A310 G000137
Text: 3230114 E LE C TR O N IC D E S IG N S 85D IN C ELE CT RON IC DESIGNS INC AS r 00129 DEj B S 3 D i m T -4 6 -2 3 -1 2 0Q0D15T t, | ~ EDH 8808AC 70/10/12/15 LP Monolithic The fu tu re . .today. 8KxS Static RAM CMOS, Low Power Monolithic Features The EDH 8808AC-LP is a high performance, low
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T-46-23-12
3S3D114
8808AC
8808AC-LP
EDH808AC-10LPJI
8808AC-70LP
8808AC-70LPJI
20E1
A310
G000137
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256KX16
Abstract: EDI8F16256C
Text: EDI8F16256C K X '256KX16 SRAM Module GIECTOONC DCSIGNS, NC. 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in High Density 4096K-bit CMOS Static
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EDI8F16256C
256KX16
4096K-bit
512Kx8
1024Kx4
EDI8F16256C
256Kx4
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell
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353011M
00D0141
8808ACL
8808ACL
8808ACL-10
8808ACL-85
8808ACL-CMHR
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The E D I9 F 3 6 2 5 6 C is a high speed 9 megabit Static R A M 256 K x3 6 bit C M O S Static module organized a s 25 6 K words by 36 bits. Four chip selects E 0 -E 3 are used to independently enable
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EDI9F36256C
256Kx36
placed6KX36
EDI9F36256C25MZC
EDI9F36256C35MZC
EDI9F36256C20MZC
EDBF362S6C
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EDI88128LPS35MC
Abstract: EDI88128LPS25MC 17hs EDI88128CS25TC t1is EDI88128CS EDI88128CS17HC EDI83128 R30P
Text: E L E C T R ONIC DESIGNS INC ^ E D S1E D • 3230114 0000^45 4bO H E L D I E D I8 8 1 2 8 C S Electronic DMlgra In c . — . . . . . High Performance Megabit Monolithic SRAM
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EDI88128CS
128Kx8
EDI88128CS
as128Kx8
EDI88128U3S,
EDI88128CS25MC
EDI88128CS35MC
EDI88128CS17TC
EDI88128CS20TC
EDI88128LPS35MC
EDI88128LPS25MC
17hs
EDI88128CS25TC
t1is
EDI88128CS17HC
EDI83128
R30P
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TME 57
Abstract: No abstract text available
Text: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The EDI9F36256C is a high speed 9 megabit Static RAM 256Kx36 bit CMOS Static module organized as 256K words by 36 bits. Four chip selects E0-E3 are used to independently enable
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EDI9F36256C
256Kx36
EDI9F36256C
EDI9F36256C20MZC
EDI9F36256C25MZC
TME 57
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI5M32128C ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128KX32 CMOS EEPROM Module ] gi II Features The EDI5M32128C is a high speed, high perform ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8
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EDI5M32128C
128KX32
EDI5M32128C
128Kx8
sp5M32128C150GM
EDI5M32128C200GM
EDI5M32128C120GB
EDI5M32128C150GB
EDI5M32128C200GB
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dram 4mx4
Abstract: ca713
Text: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit
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EDI4M44096C
EDI4M44096C
EDI4M44096C1OOZM
dram 4mx4
ca713
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A17-A18j
Abstract: 2555N
Text: ^ EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic four mega
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EDI8M8512C
512Kx8
4096K
128Kx8
the128Kx8
EDI8M8512LP)
EDI8M8512C85C6B
EDI8M8512C85C6I.
A17-A18j
2555N
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Untitled
Abstract: No abstract text available
Text: EDI9F33256C m x 156Kx32 SRAM Module El£CTKONC CCSÍGNS.NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack
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EDI9F33256C
156Kx32
256Kx32
EDI9F33256C
256Kx4
EDBF33256C
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A934
Abstract: No abstract text available
Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,
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EDI9F3420C
128Kx16
32Kx16
120ns
150ns
EDI9F3420C
A934
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