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    Untitled

    Abstract: No abstract text available
    Text: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB


    OCR Scan     		PDF EDI7P16xxxA 220MB 110MB car04 EDI7P16xxxATA00Z EDI7P16xxxCFA00Z 175MB

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­


    OCR Scan     		PDF EDI7F8512C 512Kx8 EDI7F8512C 128Kx8 3E30114 EDI7F8512C120BSC EDI7F8512C150BSC

    a719

    Abstract: EDI411024C 150ni 15trc 1MX1
    Text: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power


    OCR Scan     		PDF EDI411024C EDI4110240 T-46-23-15 EDI411024Ã Noie27 EDI411024C a719 150ni 15trc 1MX1

    9CTI

    Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
    Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		PDF ED1784MS 250ns EDI784MSV EDI784MSV50BB EDI784MSV50FB EDI784MSV50B8 EDI784MSV506C 24/32Pin 300MN 3530im 9CTI S28B 9CTI 10 pin ic EC017 EDJ7

    D012

    Abstract: D019 D020 D023 EDI8F32128C t462
    Text: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is


    OCR Scan     		PDF 323G114 EDI8F32128C 128Kx32 EDI8F32128Cisahighspeed4megabitStatic 128Kx8 EDI8F32128C EDI8F32128C15MMC EDISF32128C20MMC EDI8F32128C25MMC D012 D019 D020 D023 t462

    S0014

    Abstract: TME 57 256KX16 A1526
    Text: ^EDI EDI8F16258C afCTOONC OESGNS. NC '256Kxie SRAM Module 256KX16 Static RAM CMOS Module Features 256Kx16 bit CMOS Static Random Access Memory • Access Times 70,85, and 100ns • Data Retention Function EDI8F16258LP • TTL Compatible Inputs and Outputs


    OCR Scan     		PDF EDI8F16258C 56Kx1S 256Kx16 100ns EDI8F16258LP) EDI8F16258C 4096K 128Kx8 S0014 TME 57 A1526

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ ELECTRO NIC DESIGNS IN C EDI7F32128C High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Module r a iy ia iM ï Features The EDI7F32128C is a 5V-0nly In-System Programmable 128Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as


    OCR Scan     		PDF EDI7F32128C 128Kx32 EDI7F32128C 150ns 128Kx8 OIAia0020821

    Untitled

    Abstract: No abstract text available
    Text: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,


    OCR Scan     		PDF EDI9F3420C 128Kx16 32Kx16 120ns 150ns EDI9F3420C

    Untitled

    Abstract: No abstract text available
    Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		PDF EDI784MS EDI784MSV 528-byte 250ms funI784MSV EDI784MSV50BB ED1784MSV50FB EDI784MSV50BB EDI7MMSV50BC 300MW

    Untitled

    Abstract: No abstract text available
    Text: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This


    OCR Scan     		PDF EDI8F24129C 128KX24 EDI8F24129C 128Kx8 0001b

    TME 57

    Abstract: a6353 355A4 a2361
    Text: m x EDI9F33256C 256Kx32 SRAM Module ELECTRONIC DESIGNS NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­


    OCR Scan     		PDF EDI9F33256C 256Kx32 EDI9F33256C 256Kx4 EDI9F33256C20MZC EDI9F33256C25MZC TME 57 a6353 355A4 a2361

    DODI151

    Abstract: EDI8M8512C EDI8M8512LP
    Text: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


    OCR Scan     		PDF EDI8M8512C 512Kx8 EDI8M8512C 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. DODI151 EDI8M8512LP

    EDI8L3265C

    Abstract: OQ23 "Electronic designs inc"
    Text: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array


    OCR Scan     		PDF EDI8L3265C 64Kx32 EDI8L3265C 128Kx16 EDI8L3265C, EDI8L3265C12AC EDI8L3265C15AC EDI8L3265C17AC EDI8L3265C20AC OQ23 "Electronic designs inc"

    20E1

    Abstract: A310 G000137
    Text: 3230114 E LE C TR O N IC D E S IG N S 85D IN C ELE CT RON IC DESIGNS INC AS r 00129 DEj B S 3 D i m T -4 6 -2 3 -1 2 0Q0D15T t, | ~ EDH 8808AC 70/10/12/15 LP Monolithic The fu tu re . .today. 8KxS Static RAM CMOS, Low Power Monolithic Features The EDH 8808AC-LP is a high performance, low


    OCR Scan     		PDF T-46-23-12 3S3D114 8808AC 8808AC-LP EDH808AC-10LPJI 8808AC-70LP 8808AC-70LPJI 20E1 A310 G000137

    256KX16

    Abstract: EDI8F16256C
    Text: EDI8F16256C K X '256KX16 SRAM Module GIECTOONC DCSIGNS, NC. 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in High Density 4096K-bit CMOS Static


    OCR Scan     		PDF EDI8F16256C 256KX16 4096K-bit 512Kx8 1024Kx4 EDI8F16256C 256Kx4

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell


    OCR Scan     		PDF 353011M 00D0141 8808ACL 8808ACL 8808ACL-10 8808ACL-85 8808ACL-CMHR

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The E D I9 F 3 6 2 5 6 C is a high speed 9 megabit Static R A M 256 K x3 6 bit C M O S Static module organized a s 25 6 K words by 36 bits. Four chip selects E 0 -E 3 are used to independently enable


    OCR Scan     		PDF EDI9F36256C 256Kx36 placed6KX36 EDI9F36256C25MZC EDI9F36256C35MZC EDI9F36256C20MZC EDBF362S6C

    EDI88128LPS35MC

    Abstract: EDI88128LPS25MC 17hs EDI88128CS25TC t1is EDI88128CS EDI88128CS17HC EDI83128 R30P
    Text: E L E C T R ONIC DESIGNS INC ^ E D S1E D • 3230114 0000^45 4bO H E L D I E D I8 8 1 2 8 C S Electronic DMlgra In c . — . . . . . High Performance Megabit Monolithic SRAM


    OCR Scan     		PDF EDI88128CS 128Kx8 EDI88128CS as128Kx8 EDI88128U3S, EDI88128CS25MC EDI88128CS35MC EDI88128CS17TC EDI88128CS20TC EDI88128LPS35MC EDI88128LPS25MC 17hs EDI88128CS25TC t1is EDI88128CS17HC EDI83128 R30P

    TME 57

    Abstract: No abstract text available
    Text: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The EDI9F36256C is a high speed 9 megabit Static RAM 256Kx36 bit CMOS Static module organized as 256K words by 36 bits. Four chip selects E0-E3 are used to independently enable


    OCR Scan     		PDF EDI9F36256C 256Kx36 EDI9F36256C EDI9F36256C20MZC EDI9F36256C25MZC TME 57

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI5M32128C ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128KX32 CMOS EEPROM Module ] gi II Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8


    OCR Scan     		PDF EDI5M32128C 128KX32 EDI5M32128C 128Kx8 sp5M32128C150GM EDI5M32128C200GM EDI5M32128C120GB EDI5M32128C150GB EDI5M32128C200GB

    dram 4mx4

    Abstract: ca713
    Text: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit


    OCR Scan     		PDF EDI4M44096C EDI4M44096C EDI4M44096C1OOZM dram 4mx4 ca713

    A17-A18j

    Abstract: 2555N
    Text: ^ EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


    OCR Scan     		PDF EDI8M8512C 512Kx8 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. A17-A18j 2555N

    Untitled

    Abstract: No abstract text available
    Text: EDI9F33256C m x 156Kx32 SRAM Module El£CTKONC CCSÍGNS.NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­


    OCR Scan     		PDF EDI9F33256C 156Kx32 256Kx32 EDI9F33256C 256Kx4 EDBF33256C

    A934

    Abstract: No abstract text available
    Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,


    OCR Scan     		PDF EDI9F3420C 128Kx16 32Kx16 120ns 150ns EDI9F3420C A934