TA 7609
Abstract: No abstract text available
Text: EDI784MSV 4Megx8 NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (4M+128K) bit x 8bit Data Register (512 +16) bit x 8 bit
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Original
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EDI784MSV
EDI784MSV50BC
EDI784MSV50BI
EDI784MSV
TA 7609
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PDF
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EDI784MSV50BB
Abstract: EDI784MSV50BC EDI784MSV50BI
Text: EDI788MSV 8Megx8 NAND Flash ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (8M+256K) bit x 8bit Data Register (512 +16) bit x 8 bit
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Original
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EDI788MSV
EDI784MSV50BM
EDI788MSV
EDI784MSV50BB
EDI784MSV50BC
EDI784MSV50BI
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PDF
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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OCR Scan
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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PDF
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Untitled
Abstract: No abstract text available
Text: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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OCR Scan
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EDI784MSV-RP
250ms
minV50SI
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PDF
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Untitled
Abstract: No abstract text available
Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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OCR Scan
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EDI784MS
EDI784MSV
528-byte
250ms
funI784MSV
EDI784MSV50BB
ED1784MSV50FB
EDI784MSV50BB
EDI7MMSV50BC
300MW
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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OCR Scan
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EDI784MSV-RP
EDI784MSV
528-byte
I784M
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PDF
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J200M
Abstract: No abstract text available
Text: ^EDI ED I784M SV ELECIRONCDE9GIS&NC 4Megx8NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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OCR Scan
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I784M
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDf784MSV50BB
EDI784MSV50BC
EDI784MSV50BI
050TYP.
EDI784MSV
J200M
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PDF
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Untitled
Abstract: No abstract text available
Text: M CIROM C OOCNS N G | INSIDE SECTION 4 . Density 1 Megabit 1 Megabit 4 Megabit« 4 Megabits 32 Megabits 64 Megabits Orgaalzation 82KX82 32KX32 128KX32 128KX32 4MX8 8Mx8 Part Ne. EDI5M8232C-GB EDI5C8232C-JM EDI5M82128C-GB EDI5C32128C-JM EDI784MSV-BM EDI788MSV-BM
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OCR Scan
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82KX82
32KX32
128KX32
EDI5M8232C-GB
EDI5C8232C-JM
EDI5M82128C-GB
EDI5C32128C-JM
EDI784MSV-BM
EDI788MSV-BM
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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OCR Scan
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EDI784MSV-RP
EDI784MSV50SI
EDI784MSV-RP
ECOU8274
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI788MS V 8Megx8 NAND Flash ELECTRONIC DESIGNS, INC ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic {Features The EDI788MSV is a 8M 8,388,608 x8 bit NAND Flash • Single 3.3 - Volt Supply cell provides the most cost-effective solution for high density
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OCR Scan
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EDI788MS
EDI788MSV
528-byte
250ns
24/32Pin
7/96ECO
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDL EDI788MS V 8Megx8 NAND Flash ELECTRONIC DESIGNS, INC ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI788MSV is a 8M 8,388,608 x8 bit NAND Flash • Single 3.3 - Volt Supply cell provides the most cost-effective solution for high density
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OCR Scan
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EDI788MS
24/32Pin
EDI788MSV
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI E D I788M S V 8Megx8 NAND Flash ElÉCTUONC DESICN& HC. ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic ¡Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (8M+256K) bit x 8bit Data Register
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OCR Scan
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I788M
050TYP.
EDI788MSV
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PDF
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