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    EDI411024C Search Results

    EDI411024C Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EDI411024C White Microelectronics + 5V (±10%),1M x 1 dynamic RAM CMOS, monolithic Scan PDF
    EDI411024C-100 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    EDI411024C100FB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C100NB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C100QB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C100ZB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C-120 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    EDI411024C-150 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    EDI411024C-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    EDI411024C70FB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C70NB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C70QB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C70ZB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    EDI411024C80FB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C80NB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C80QB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF
    EDI411024C80ZB Electronic Designs 1 Megabit x 1 Dynamic RAM CMOS, Monolithic Scan PDF

    EDI411024C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RAS 0910

    Abstract: EDI411024C EDI411024C100QB EDI411024C100ZB EDI411024C70NB EDI411024C70QB EDI411024C70ZB EDI411024C80NB EDI411024C80QB EDI411024C80ZB
    Text: m EDI411024C x 1Megx1 Fast Page DRAM ELECTRONIC DESIGNS. INC M/legabitx 1 Dynamic RAM CMOS, Monolithic The EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1 Megabit x1. During Read and W rite cycles each bit is addressed


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    PDF EDI411024C 100ns EDI411204C EDI411024C RAS 0910 EDI411024C100QB EDI411024C100ZB EDI411024C70NB EDI411024C70QB EDI411024C70ZB EDI411024C80NB EDI411024C80QB EDI411024C80ZB

    a719

    Abstract: EDI411024C 150ni 15trc 1MX1
    Text: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power


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    PDF EDI411024C EDI4110240 T-46-23-15 EDI411024Ã Noie27 EDI411024C a719 150ni 15trc 1MX1

    EDI411024C

    Abstract: No abstract text available
    Text: m o _ EDI411024C i Electronic D*4gn» Ine. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic railLDHflDNAmf Features The ED 1411024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x1. The use of triple-layer polysilicon process, combined with


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    PDF EDI411024C 1411024C EDI411024C

    EDI411024C

    Abstract: No abstract text available
    Text: ^ E D _ I Electronic Detlgns Inc. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan
    PDF EDI411024C EDI411024C

    Untitled

    Abstract: No abstract text available
    Text: W 3X EDI411024C m g x 1 Fast Page DRAM ELECTRONIC DESIGNS, INC. IMegabitx 1Dynamic RAM CMOS, Monolithic Tîie EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1Megabit x1. During Read and Write cycles each bit is addressed


    OCR Scan
    PDF EDI411024C EDI411204C EDI411024CRev. 20LeadCS0J

    Untitled

    Abstract: No abstract text available
    Text: moi _ C Electronic DMlgn» Ine. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan
    PDF EDI411024C EDI411024C

    RAS 0910

    Abstract: No abstract text available
    Text: ^EDI EDI411024C 1Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC IMegabitx 1 Dynamic RAM CMOS, Monolithic The EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1 Megabit x1. During Read and Write cycles each bit is addressed 1Mx1 bit CMOS Dynamic


    OCR Scan
    PDF EDI411024C 100ns EDI411204C EDI411024C70ZB EDI411024C70ZI 11ndicator RAS 0910

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI411024C Electronic Detlgns Inc. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan
    PDF EDI411024C EDI411024C

    ras 0910

    Abstract: No abstract text available
    Text: OCT 2 8 1990 ^ E D I E D I 4 1 1 0 2 4 C Electronic Designs Inc^ High Performance Megabit M onolithic DRAM 1Mx1 Dynam ic RAM P iiU illM M Y Features CMOS, M onolith ic The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The


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    PDF EDI411024C 150ns Inputs/O100 EDI411024C120NB ED1411024C120FB EDI411024C150NB ED1411024C150FB ras 0910

    RAS 0910

    Abstract: No abstract text available
    Text: ^EDI EDI411024C 1Megx1 Fast Page DRAM ELECTRONIC OESIGNSL HC. IMegabitx 1 Dynamic RAM CMOS, Monolithic Features 1Mx1 bit CMOS Dynamic Random Access Memory • Access Times 70 ,80,100ns • 8ms Refresh Rate • Low Operating Power Dissipation • Low Standby Power


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    PDF 100ns EDI411024C EDI411204C 20LeadCS 20LeadFlatpack 01581USA RAS 0910

    Untitled

    Abstract: No abstract text available
    Text: WDÌ DRAM Test Enable Function E lectronic D « «tg n i Inc. EDI411024CXXQB Functional Description The T e s t E nable Function im plem entation on E lectronic D esigns' 1M x 1 dynam ic RAM allow s te st tim e reduction by use o f a parallel test algorithm . By asserting the TE pin, the


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    PDF EDI411024CXXQB 256Kx1

    Untitled

    Abstract: No abstract text available
    Text: EDI414097C MDi Electronic Dôiign» Inc. • High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic Features The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed


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    PDF EDI414097C EDI414097C EDI414097C70LZB EDI414097C80LZB ED1414097C100LZB

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ELECTPOWC MSGNS NC. | INSIDE SECTION 3 . Density 1 Megabit 1 Megabit 1 Megabit 1 Megabit 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 16 Megabits 16 Megabits 18 Megabits 16 Megabits Organization IM xl IM xl 1Mx1 1Mx1 1Mx4 1Mx4 1Mx4


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    PDF BH411024C-ZB EDI411024C-NB EDI411024C-FB EDI411024C-QB EDI441024C-LZB EDI441024C-BB EDI441024C-FB EDI414097C-LZB E0W14Q97C-BB EDI414087C-FB

    EDI8M8512L

    Abstract: No abstract text available
    Text: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28


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    PDF EDH816H64CX2 EDI88128PXXNM EDI88130CSXXNB 188130LPSXXNB EDI88130PSXXNB 188128CXXLB EDI88128CXXLM EDI88128LPXXLB EDI88128LPXXLM EDI88128PXXLB EDI8M8512L

    511000A

    Abstract: m511000aljp-10 M511000A HM511000P-12 511000 21010-10 HM511001-12 18PIN AAA1M100-12 AAA1M200-07
    Text: 201 IM m CMOS X * ít £ c o Á ^ TRAC nax ns TRCY min (ns) TCAD min (ns) TAH min (ns) D y n a m i c R A M (1 0 4 8 5 7 6 x 1 ) m 's 7 ' TP min (ns) TWCY min (ns) TDH min (ns) TRWC V D D or V C C (ns) (V) 1 8 P I N m I DD max (itiA) Â I DD STANDBY ( 1 SB/ I SB2)


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    PDF 18PIN HM511001AP/JP/ZP-7 HM511001G-10 HM511001G-12 HM511001G-15 HM511001P-10 HM511001P-12 511000A m511000aljp-10 M511000A HM511000P-12 511000 21010-10 HM511001-12 AAA1M100-12 AAA1M200-07

    64kx4 DRAM

    Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
    Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static


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    PDF EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 144bit 32Kx8. MIL-STD-883, 64Kx4 EDI8466CB. 256Kx1 EDI81256C/LP/P. 64kx4 DRAM SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


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    PDF EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832

    Untitled

    Abstract: No abstract text available
    Text: ^EDL ED1411024C IMegxl Fast Page DRAM ELECTRONIC CCSGN& NC 1Megabitx1 DynamicRAM CMOS,Monolithic The EDI411204C is a high performance, low power C M O S ¡Features Dynamic RAM organized a s 1Megabit x1. During Read and Write cycles each bit is addressed 1Mx1 bit C M O S Dynamic


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    PDF ED1411024C 100ns EDI411204C EDI411024C70ZB EDM11024C70ZI EDI411024C DE96N& 20LeadCSOJ 20LeadFlatpack EDW11024C

    EDI44256C

    Abstract: No abstract text available
    Text: ^EDI Dynamic RAM Selector Guide Electronic D u lg n s Inc. The Industry’s Fastest High Density MIL-STD-883, Paragraph 1.2.1 Compliant Dynamic RAMs In response to the need of our military customers for high-performance, M IL-S TD 883 compliant DRAM s, Electronic Designs


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    PDF MIL-STD-883, 256Kx4 EDI44256CXXNB EDI44256CXXQB EDI44256CXXZB EDI411024CXXFB EDI411024CXXNB EDI411024CXXQB EDI44256C