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    2555N Search Results

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    2555N Price and Stock

    Littelfuse Inc SP2555NUTG

    TVS DIODE 2.5VWM 19VC 10UDFN
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    DigiKey SP2555NUTG Cut Tape 5,524 1
    • 1 $1.3
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    • 1000 $0.62
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    SP2555NUTG Digi-Reel 5,524 1
    • 1 $1.3
    • 10 $1.11
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    • 1000 $0.62
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    SP2555NUTG Reel 3,000 3,000
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    Mouser Electronics SP2555NUTG 19,389
    • 1 $1.16
    • 10 $1.03
    • 100 $0.774
    • 1000 $0.606
    • 10000 $0.564
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    Newark SP2555NUTG Cut Tape 532 1
    • 1 $1.29
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    SP2555NUTG Reel 3,000
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    Rutronik SP2555NUTG Reel 3,000 3,000
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    Win Source Electronics SP2555NUTG 45,000
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    Littelfuse Inc AQ2555NUTG

    TVS DIODE 2.5VWM 19VC 10UDFN
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    DigiKey AQ2555NUTG Digi-Reel 4,693 1
    • 1 $1.27
    • 10 $0.958
    • 100 $1.27
    • 1000 $0.632
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    AQ2555NUTG Cut Tape 4,693 1
    • 1 $1.27
    • 10 $0.958
    • 100 $1.27
    • 1000 $0.632
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    AQ2555NUTG Reel 3,000 3,000
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    Mouser Electronics AQ2555NUTG 10,752
    • 1 $1.59
    • 10 $1.3
    • 100 $1.01
    • 1000 $0.698
    • 10000 $0.597
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    Newark AQ2555NUTG Cut Tape 2,879 1
    • 1 $0.525
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    AQ2555NUTG Reel 3,000
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    RS AQ2555NUTG Bulk 8 Weeks 3,000
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    ComSIT USA AQ2555NUTG 2,193
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    New Advantage Corporation AQ2555NUTG 6,000 1
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    Bivar Inc 3UWD2.555N

    LED WHITE/NEUTRAL 3MM T/H
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    Elesa SPA CE.92255-5N

    DD52R, MECHANICAL POSITION INDIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CE.92255-5N Bag 1
    • 1 $118.01
    • 10 $118.01
    • 100 $118.01
    • 1000 $118.01
    • 10000 $118.01
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    Elesa SPA CE.93255-5N

    DD52R, MECHANICAL POSITION INDIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CE.93255-5N Bag 1
    • 1 $118.01
    • 10 $118.01
    • 100 $118.01
    • 1000 $118.01
    • 10000 $118.01
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    2555N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


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    288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby


    Original
    EDI88128CS 128Kx8 EDI88128LPS) MIL-PRF-38535. PDF

    p 602

    Abstract: WEDPS512K32-XBX bga thermal resistance
    Text: White Electronic Designs WEDPS512K32-XBX 512Kx32 SRAM MULTI-CHIP PACKAGE FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 12, 15, 17, 20, ns Packaging TTL Compatible Inputs and Outputs • 16mm x 18mm, 143 PBGA 5V Power Supply


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    WEDPS512K32-XBX 512Kx32 512Kx32, 1Mx16 25-55ns p 602 WEDPS512K32-XBX bga thermal resistance PDF

    WEDPS512K32-XBX

    Abstract: No abstract text available
    Text: WEDPS512K32-XBX White Electronic Designs 512Kx32 SRAM MULTI-CHIP PACKAGE ADVANCED* FEATURES „ Commercial, Industrial and Military Temperature Ranges „ Access Times of 12, 15, 17, 20, ns „ TTL Compatible Inputs and Outputs „ Packaging „ 5 Volt Power Supply


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    WEDPS512K32-XBX 512Kx32 512Kx32, 1Mx16 25-55ns WEDPS512K32-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI88130CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns An additional chip enable line provides system memory security during power down in non-battery backed up systems and memory banking in high speed battery backed systems where large multiple


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    EDI88130CS 128Kx8 EDI88130LPS) 128Kx8 EDI88130CS PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby


    Original
    EDI88128CS 128Kx8 EDI88128LPS) MIL-PRF-38535. MIL-STD-883 PDF

    CS229

    Abstract: EDI88130CS
    Text: EDI88130CS HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ Battery Back-up Operation • 2V Data Retention EDI88130LPS The EDI88130CS is a high speed, high performance, 128Kx8 bits


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    EDI88130CS 128Kx8 EDI88130LPS) EDI88130CS 128Kx8 MIL-STD-883 CS229 PDF

    EDI88128CS

    Abstract: No abstract text available
    Text: EDI88128CS HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns The EDI88128CS is a high speed, high performance, 128Kx8 megabit density Monolithic CMOS Static RAM. ■ CS and OE Functions for Bus Control


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    EDI88128CS 128Kx8 EDI88128CS 128Kx8 EDI88128LPS) EDI881 MIL-STD-883 PDF

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


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    2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ EDI88130CS m o \ Bedronic Detignt Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory


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    EDI88130CS 128Kx8 EDI88130CS EDI88130LPS, EDI88130CS55NB EDI88130LPS55NB EDI88130CS20TB EDI88130LPS20TB PDF

    EDI88128CS45CB

    Abstract: as128Kx8 663D
    Text: EDI88128CS ^ E D l 12SKx8 Monolithic Sialic Ram ELECTRONIC. DESIGNS, INC. Features 72RfGtf Monotihic Hicfi Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory • Fast Access Times: 12,15r 17,2Q 25,35r 45r & 55ns TTie EDI88128CS is a high speect high performance


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    EDI88128CS 12SKx8 128Kx8 EDI88128LPS) 72RfGtf EDI88128CS EDI88128C 663D1 EDI88128CS45CB as128Kx8 663D PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ E D EDI8C32128C I 128Kx32 Static Ram EL£CTRONC DESIGNS M C 128Kx32 Highspeed Static RAM Features 128Kx32 bit CMOS Static Random Access Memory • Fast Access Times: 17", 20,25,35,45, and 55ns • Individual Byte Selects x8, x16, x32 • Data Retention Function, EDI8C32128LP


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    EDI8C32128C 128Kx32 EDI8C32128LP EDI8C32128C, 128Kx8 EDI8C32128C20GM EDI8C32128C20GI PDF

    EDI88130CS25CB

    Abstract: No abstract text available
    Text: m o i EDI88130CS ^ •c to n ie Designs Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory


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    EDI88130CS 128Kx8 EDI88130CS EDI88130LPS, MIL-STD-883, IndustrialS45TB EDI88130LPS55TB EDI88130CS25CB PDF

    ed188130

    Abstract: ED188130LPS
    Text: EDI88130CS ^ E D I, ÉLECTROMC DESIGNS NC. 128Kx8 Monolithic Static Ram Features 128Kx8 Monolithic CMOS Static RAM, Highspeed 128Kx8 bits Monolithic CMOS Static Random Access Memory The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits.


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    128Kx8 EDI88130LPS) EDI88130CS EDI88130CS 08K5N1NC. ed188130 ED188130LPS PDF

    EDI88128CS45CB

    Abstract: EDI88128LPS25NB
    Text: ^EDI EDI88128CS B actronle Designs Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabitdensity monolithic Static RAM organized as 128Kx8 bits. The device has eight bi-directional input-output lines to


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    EDI88128CS 128Kx8 EDI88128CS EDI88128LPS MIL-STD-883, 128KTB EDI88128LPS20ZB EDI88128LPS25ZB EDI88128LPS35ZB EDI88128CS45CB EDI88128LPS25NB PDF

    STATIC RAM 2114

    Abstract: RAM 2114 2114 static ram ic EDI8M32512CA RAM 2116
    Text: EDI8M32512CA ^EtECTBOMC E D L DEStGNS WC. m 512Kx32 Static Ram 512Kx32 CMOS, High Speed Static RAM Features The EDI8M32512CA, a high speed, high performance, 16 512Kx32 bit CMOS Static megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs.


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    EDI8M32512CA 512Kx32 EDI8M32512CA, 512Kx8 EDI8M32512LPA20GB EDI8M32512LPA20GI 10x100= STATIC RAM 2114 RAM 2114 2114 static ram ic EDI8M32512CA RAM 2116 PDF

    DODI151

    Abstract: EDI8M8512C EDI8M8512LP
    Text: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


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    EDI8M8512C 512Kx8 EDI8M8512C 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. DODI151 EDI8M8512LP PDF

    IDT7M4077

    Abstract: kw05 2814t
    Text: PRELIMINARY IDT7M4077 256K x 32 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice Technology» Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con­ structed on a mu Itilay er ceramic substrate using eight 256Kx4


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    IDT7M4077 I/O10 I/O11 I/012 IDT7M4077 kw05 2814t PDF

    EDI88130CS20NB

    Abstract: EDI88130CS EDI88130CS15CI EDI88130CS55LB EDI88130CS25CB EDI88130CS25N
    Text: W5X EDI88130CS 128Kx8 M onolithic ELECTRONIC DESIGNS, INC Static Ram Features 128Kx8 Monolithic CMOS Static RAM, Highspeed 128Kx8 bits Monolithic CMOS Static Random Access Memory • The EDI88130CS is a high speed, high performance, Fast Access Times: monolithic Static RAM organized as 128Kx8 bits.


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    EDI88130CS 128Kx8 EDI88130LPS) EDI88130CS 6630t EDIBB130CS 12/96ECOH80S1 EDI88130CS20NB EDI88130CS15CI EDI88130CS55LB EDI88130CS25CB EDI88130CS25N PDF

    IC TB 1237 AN

    Abstract: TB 1237 AN IDT7M4077
    Text: PRELIMINARY IDT7M4077 256Kx 32 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh density 8 m eg ab it static R A M m odu le T h e ID T / M 4 0 7 7 is a 2 5 6 K x 3 2 static R A M m odu le con­ structed on a m ultilayer cera m ic substrate using eight 2 5 6 K x 4


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    256Kx IDT7M4077 IDT7M4077 IC TB 1237 AN TB 1237 AN PDF

    EDI8C32128C45GM

    Abstract: No abstract text available
    Text: W D EDI8C32128C \ 128Kx32 Static Ram ELECTRONIC DESIGNS, INC. 128Kx32 Highspeed Static RAM Features The EDI8C32128C, a high speed, high performance, four 128Kx32 bit CMOS Static megabit density Static RAM organized as 128Kx32 bits, Random Access Memory •


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    EDI8C32128C 128Kx32 EDI8C32128LP EDI8C32128C20GM EDI8C32128C20GI 040x45 BC3212BC EDI8C32128C45GM PDF

    Untitled

    Abstract: No abstract text available
    Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit


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    EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 EDI8M8257LP) 323011M PDF

    Untitled

    Abstract: No abstract text available
    Text: _ EDI8C32128C ^EDI E l e c t r o n i c D e s ig n s I n c . High Performance Four Megabit SRAM Module 128Kx32 CMOS High Speed Static RAM Module Features The EDI8C32128C is a high speed, high performance, four megabit density Static RAM module organized as


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    EDI8C32128C 128Kx32 EDI8C32128C 128Kx8 EDI8C32128C35GC EDI8C32128C45GC EDI8C32128C55GC PDF

    EDI8M8512C

    Abstract: EDI8M8512C25C6B EDI8M8512C30C6B EDI8M8512C35C6B EDI8M8512C45C6B EDI8M8512LP TTL 154
    Text: ^EDI EDI8M8512C Electronic Designs Inc. , High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


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    EDI8M8512C 512Kx8 EDI8M8512C 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. EDI8M8512C25C6B EDI8M8512C30C6B EDI8M8512C35C6B EDI8M8512C45C6B EDI8M8512LP TTL 154 PDF