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Littelfuse Inc IXTQ36N50P MOSFET N-CH 500V 36A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ36N50P	Tube	195		1	1 $11.15 10 $11.15 100 $7.08767 1000 $11.15 10000 $11.15	Buy Now
Newark	IXTQ36N50P	Bulk			300	1 - 10 - 100 - 1000 $6.65 10000 $6.65	Buy Now
Littelfuse Inc IXFR36N50P MOSFET N-CH 500V 19A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR36N50P	Tube	22		300	1 - 10 - 100 - 1000 $8.06613 10000 $8.06613	Buy Now
Newark	IXFR36N50P	Bulk			300	1 - 10 - 100 - 1000 $8.46 10000 $8.46	Buy Now
RS	IXFR36N50P	Bulk		8 Weeks	30	1 - 10 - 100 $12.48 1000 $12.48 10000 $12.48	Get Quote
Littelfuse Inc IXFT36N50P MOSFET N-CH 500V 36A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT36N50P	Tube			1	1 $11.1 10 $11.1 100 $7.05367 1000 $11.1 10000 $11.1	Buy Now
Newark	IXFT36N50P	Bulk			300	1 - 10 - 100 - 1000 $6.61 10000 $6.61	Buy Now
IXYS Corporation IXTV36N50P MOSFET N-CH 500V 36A PLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTV36N50P	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFV36N50P MOSFET N-CH 500V 36A PLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFV36N50P	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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36N50P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
I 508 V Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol	Original	ISOPLUS247TM 36N50P I 508 V	PDF
123B16 Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	36N50P 36N50P PLUS220 O-268 O-247 405B2 IXFH36N50P 123B16	PDF
36n50P Abstract: PLUS220SMD V36N50P Text: Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 IXTH 36N50P IXTT 36N50P IXTQ 36N50P IXTV 36N50P IXTV 36N50PS RDS on = 500 V = 36 A Ω = 170 mΩ TO-3P (IXTQ) Symbol Test Conditions	Original	36N50P 36N50PS O-247 PLUS220 PLUS220SMD 36n50P PLUS220SMD V36N50P	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A Ω ≤ 170 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	36N50P 36N50PS O-247 O-268 PLUS220 PLUS220SMD	PDF
plus220smd Abstract: 36N50P IXFH36N50P Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 = 500 V = 36 A Ω = 170 mΩ RDS on TO-247 AD (IXFH) (TAB) Symbol Test Conditions	Original	36N50P 36N50PS O-247 405B2 IXFH36N50P plus220smd 36N50P	PDF
36n50P Abstract: 36N50 IXTH36N50P 4515 n 36n50P equivalent QG SMD TRANS IXTV36N50P PLUS220SMD IXTQ36N50P FS25 Text: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A ≤ 170 mΩ Ω TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	36N50P 36N50PS O-247 O-268 PLUS220 PLUS220SMD 36n50P 36N50 IXTH36N50P 4515 n 36n50P equivalent QG SMD TRANS IXTV36N50P PLUS220SMD IXTQ36N50P FS25	PDF
36N50P Abstract: IXTQ36N50P Text: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	36N50P 36N50P IXTQ36N50P	PDF
IXFH36N50P Abstract: 36N50PS 36N50 36n50P PLUS220SMD Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS VDSS ID25 RDS on trr = 500 V = 36 A ≤ 170 mΩ Ω ≤ 200 ms TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	Original	36N50P 36N50PS O-247 IXFH36N50P 36N50P PLUS220 36N50PS 36N50 PLUS220SMD	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr IXFC 36N50P IXFR 36N50P (Electrically Isolated Back Surface) V A mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	36N50P 12-06-05-C	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	36N50P 36N50P PLUS220 O-268 O-247 405B2 IXFH36N50P	PDF
36n50P Abstract: ISOPLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS ID25 = = RDS on ≤ ≤ trr (Electrically Isolated Back Surface) 500 18 190 250 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol	Original	36N50P 36n50P ISOPLUS247	PDF
36N50 Abstract: 36N50P ISOPLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	36N50P 12-06-05-C 36N50 36N50P ISOPLUS247	PDF
36n50P Abstract: No abstract text available Text: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	36N50P 36n50P	PDF
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P	PDF

STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF