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    36N60P Search Results

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    36N60P Price and Stock

    Littelfuse Inc IXFH36N60P

    MOSFET N-CH 600V 36A TO247AD
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    DigiKey IXFH36N60P Tube 626 1
    • 1 $11.67
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    RS IXFH36N60P Bulk 8 Weeks 30
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    New Advantage Corporation IXFH36N60P 120 1
    • 1 -
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    • 100 $9.64
    • 1000 $9
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    Littelfuse Inc IXFR36N60P

    MOSFET N-CH 600V 20A ISOPLUS247
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    DigiKey IXFR36N60P Tube 268 1
    • 1 $9.98
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    RS IXFR36N60P Bulk 8 Weeks 30
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    Littelfuse Inc IXFT36N60P

    MOSFET N-CH 600V 36A TO268
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    DigiKey IXFT36N60P Tube 300
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    Newark IXFT36N60P Bulk 300
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    Littelfuse Inc IXFK36N60P

    MOSFET N-CH 600V 36A TO264AA
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    DigiKey IXFK36N60P Tube 300
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    Newark IXFK36N60P Bulk 300
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    RS IXFK36N60P Bulk 8 Weeks 25
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    IXYS Corporation IXFH36N60P

    MOSFETs 600V 36A
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    Mouser Electronics IXFH36N60P
    • 1 $11.4
    • 10 $10.05
    • 100 $9.22
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    Newark IXFH36N60P Bulk 1
    • 1 $11.86
    • 10 $10.45
    • 100 $10.17
    • 1000 $8.75
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    TTI IXFH36N60P Tube 300
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    TME IXFH36N60P 1
    • 1 $10.08
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    • 100 $7.98
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    36N60P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS on t rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 36 A ≤ 190 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol


    Original     		36N60P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFK 36N60P IXFT 36N60P VDSS = 600 V ID25 = 36 A Ω RDS on ≤ 190 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		36N60P O-247 PDF

    M 727 36A

    Abstract: ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		36N60P M 727 36A ISOPLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 20 200 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		36N60P PDF

    36N60P

    Abstract: 247 AA
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFK 36N60P IXFT 36N60P VDSS = 600 V ID25 = 36 A Ω RDS on ≤ 190 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		36N60P 36N60P 247 AA PDF

    ISOPLUS247

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 = 600 V = 20 A ≤ 200 mΩ Ω ≤ 250 ns RDS on t rr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet


    Original     		36N60P ISOPLUS247 PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF