2SK1860

Contextual Info: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 0.40 –0.05 +0.02 2.1±0.1 0.12 –0.01 3 • Absolute Maximum Ratings Ta = 25°C (0.95)

2SK1860

Abstract: 2.2k FET electret microphone CAPACITOR MICROPHONE
Contextual Info: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm • Features Ratings Unit VDSO 20 V Drain to Gate voltage VDGO 20 V Drain to Source current IDSO

2SK1860

Contextual Info: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 0.40 –0.05 +0.02 2.1±0.1 M Di ain sc te on na tin nc ue e/ d 0.12 –0.01 1.5±0.2 2 2.20±0.15

Contextual Info: Panasonic Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET For im p e d a n ce c o n ve rsio n in low fre q u e n c y For e le c tre t c a p a c ito r m ic ro p h o n e • • Features High mutual conductance gm Low noise voltage NV

2SK1860

Contextual Info: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 0.40 –0.05 +0.02 2.1±0.1 0.12 –0.01 2 2.20±0.15 1 5˚ 1.5±0.2 • High mutual conductance gm

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SK3585

Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030