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    2SK1610 Search Results

    2SK1610 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1610 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK161-0 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1610 Unknown FET Data Book Scan PDF
    2SK1610 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK1610 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1610

    Abstract: SC-65 2SK161-0
    Text: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 500 V VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS*


    Original     		PDF 2SK1610 2SK1610 SC-65 2SK161-0

    Untitled

    Abstract: No abstract text available
    Text: 2SK1610 Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 500 V Gate-Source voltage VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS * 170 mJ Avalanche energy capability


    Original     		PDF 2SK1610

    2SK1610

    Abstract: SC-65 M-J58 2sk16
    Text: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic M Di ain sc te on na tin nc ue e/ d unit: mm 4.0±0.1 V Pulse IDP ±13


    Original     		PDF 2SK1610 2SK1610 SC-65 M-J58 2sk16

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 500 V VGSS ±30 V Pulse ID ±13 A IDP ±26 A EAS* Avalanche energy capacity


    Original     		PDF 2SK1610

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


    Original     		PDF MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013

    2SK1610

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1610 2SK1610

    2sk2324

    Abstract: 2SK2124 2SK2127 2sk2323
    Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )


    OCR Scan     		PDF O-22C O-220E 2SK1605 2SK1606 2SK2123 2SK2124 2SK1607 2SK2032 2SK2571 2SK2509 2sk2324 2SK2127 2sk2323

    2SK161

    Abstract: 2SK161GR vI652
    Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 2SK161 2SK161-0 2SK161-Y 2SK161-GR 2SK161GR vI652

    2SK2324

    Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
    Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)


    OCR Scan     		PDF 2SK758 O-220F 2SK963 2SK1478 A2SK2122 O-220E 2SK1036 2SK766 2SK2324 TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm — NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 55MAX

    2SK1603

    Abstract: 2SK1601 2SK1606 2SK1580 2SK1582 2SK1583 2SK1584 2SK1585 2SK1586 2SK1588
    Text: - 112 - ft f M £ tí: ffl € & m £ A £ 1 % E ft K V * (V) fr fê fr (A) % 3 P d /P c h (max) (A) (W) fö 4# 14 (Ta=25t3) (min) (V) (max) (V) Vd s I gss Vg s (VÏ (min) (A) (max) V d s (A) (V) Id (A) (V) (min) (S) %? Vds (V) 1d (A) 2SK1580 NEC SW MOS


    OCR Scan     		PDF 2SK1580 2SK1S81 2SK1582 2SK1583 2SK1584 2SK1603 35nstyp 2SK1605 50nstyp 2SK1606 2SK1603 2SK1601 2SK1606 2SK1585 2SK1586 2SK1588

    2SK161

    Abstract: TA2024 2SK1610 2SK161GR
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 4 .2 M A X . — 1 1 1 I 1 : NF = 2.5dB Typ. (f = 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 2SK161 TA2024 2SK1610 2SK161GR

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


    OCR Scan     		PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107

    OF03

    Abstract: 2SK1263 2SK2377
    Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128


    OCR Scan     		PDF A2SK2277 2SK2014 2SK2047 2SK1834 220Fro 2SK1980 A2SK2128 A2SK2125 2SK1833 2SK2509 OF03 2SK1263 2SK2377

    MN1280

    Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
    Text: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074


    OCR Scan     		PDF MN1380 MN13801 MN13802 MN1381 MN13811 MN13812 MN1382 MN13821 MN13822 MN1544 MN1280 AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    2SK2277

    Abstract: 2SK2580 220E4 2SK2015 2SK2014
    Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128


    OCR Scan     		PDF 2SK2277 2SK2014 2SK2047 2SK2538 220Fz 2SK1834 220Fro 2SK1980 A2SK2128 220E-0 2SK2580 220E4 2SK2015

    2sk161

    Abstract: TOSHIBA 2SK161
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS — NF = 2.5dB Typ. (f = 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.) Extremely Low Reverse Transfer Capacitance


    OCR Scan     		PDF 2SK161 100MHz) 55MAX 2sk161 TOSHIBA 2SK161

    2SK161

    Abstract: No abstract text available
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS 4 .2 M A X . • • • Low Noise Figure : NF = 2.5dB Typ. (f = 100 MHz) High Forward Transfer Admittance : |Yfs| = 9 mS (Typ.)


    OCR Scan     		PDF 2SK161 2SK161

    2SK161

    Abstract: TOSHIBA 2SK161
    Text: TO SH IBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS 4.2M AX. • • • Low Noise Figure : NF = 2.5dB Typ. (f = 100 MHz) High Forward Transfer Admittance : |Yfs| = 9 mS (Typ.)


    OCR Scan     		PDF 2SK161 2SK161 TOSHIBA 2SK161

    K614

    Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
    Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)


    OCR Scan     		PDF 2SK662 2SK1103 2SJ163 2SK198 2SK374 2SK123 2SK1216 2SK1842 2SJ164 2SK301 K614 K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996

    Untitled

    Abstract: No abstract text available
    Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22ÛF(a) (D55) TO-220E (D59) TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (067) V dss (V) V gss (V) 500 ±20 2SK1406 2SK2509 2SK1833 2SK2125 2SK1608 2SK2126 ton typ (ns) 150 140 480 15 0.5 8


    OCR Scan     		PDF O-220E 2SK1406 A2SK2572 2SK1605 2SK1606 2SK2123 2SK2124 2SK1607 2SK2032 2SK2571