Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD2012 TRANSISTOR Search Results

    2SD2012 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SD2012 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2012

    Abstract: 2sd2012 transistor transistor 2SD2012
    Text: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor


    Original     		PDF 2SD2012 2SD2012 O-220F O-220F 2sd2012 transistor transistor 2SD2012

    transistor d2012

    Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012

    D2012 toshiba

    Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 2-10R1A D2012 toshiba transistor d2012 d2012 transistor br d2012 transistor 2SD2012

    2sd2012

    Abstract: No abstract text available
    Text: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor


    Original     		PDF 2SD2012 2SD2012 O-220F O-220F

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012

    transistor d2012

    Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012

    transistor d2012

    Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba
    Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD2012 transistor d2012 d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba

    2SB1375

    Abstract: 2sb1375 equivalent 2SD2012
    Text: SavantIC Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )


    Original     		PDF 2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2sb1375 equivalent 2SD2012

    2SB1375

    Abstract: 2SD2012
    Text: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:


    Original     		PDF 2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012

    2sb1366

    Abstract: 2SD2012
    Text: SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W TC=25 APPLICATIONS ·Audio frequency power amplifier and


    Original     		PDF 2SD2012 O-220F 2SB1366 O-220F) 2sb1366 2SD2012

    2sd2012

    Abstract: 2SB1366 2SB136
    Text: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W TC=25℃ APPLICATIONS ·Audio frequency power amplifier and


    Original     		PDF 2SD2012 O-220F 2SB1366 O-220F) 2sd2012 2SB1366 2SB136

    2SB1375

    Abstract: 2SD2012
    Text: JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃)


    Original     		PDF 2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012

    2SB1375

    Abstract: 2sb1375 transistor
    Text: 2SB1375 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features — 2 3 High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 — — —


    Original     		PDF 2SB1375 O-220 O-220 2SD2012 -50mA 2sb1375 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2012 TRANSISTOR（NPN） TO—220 1. BASE FEATURES 2. COLLECTOR ∙ High DC current gain: hFE 1 =100(Min) 3. EMITTER ∙Low voltage:VCE(sat)=1.0(Max) 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF O-220 2SD2012

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation


    Original     		PDF O-220F 2SD2012 O-220F

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2012 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Saturation Voltage z High Power Dissipation 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD2012

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 T O SH IB A 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 ± 0 .3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P(] = 25W (Tc = 25°C)


    OCR Scan     		PDF 2SD2012

    2SD2012

    Abstract: 2sd2012 transistor
    Text: 2SD2012 TOSHIBA 2SD2012 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm A U D IO FREQUENCY POWER AM PLIFIER APPLICATIONS • • High DC Current Gain : hpE l —100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : Pç; = 25W (Tc = 25°C)


    OCR Scan     		PDF 2SD2012 2SD2012 2sd2012 transistor

    2SD2012

    Abstract: No abstract text available
    Text: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)


    OCR Scan     		PDF 2SD2012 54truments, 2SD2012

    Untitled

    Abstract: No abstract text available
    Text: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		PDF 2SD2012

    transistor 2sd2012

    Abstract: 2sd2012
    Text: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)


    OCR Scan     		PDF 2SD2012 transistor 2sd2012 2sd2012

    2SD2Q12

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2Q12 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE 1 = 100 (Min.) Low Saturation Voltage V’ nVy.ci T w _( .»_ ai.\


    OCR Scan     		PDF 2SD2012 2SD2Q12 2SD2Q12

    2sd2012 transistor

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2012 Transistor Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier F e a tu re s • High DC Current Gain : 100 Min. • Low Saturation Voltage ~ ^CE (Satj = 1.0V (Max.) (Ic = 2A, lB = 0.2A) • High Power Dissipation - Pc = 25W (Tc = 25~C )


    OCR Scan     		PDF 2SD2012 2SB1375 Tc--25 2sd2012 transistor