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    2SB928A Search Results

    2SB928A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB928A Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB928A Panasonic Silicon PNP Transistor Original PDF
    2SB928A) Panasonic PNP Transistor Original PDF
    2SB928A TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB928A Unknown Cross Reference Datasheet Scan PDF
    2SB928A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB928A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB928A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB928A Panasonic Silicon Medium Power Transistors Scan PDF

    2SB928A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB928A

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB928A TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High collector to emitter VCEO Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1


    Original     		PDF 2SB928A O-252 -150mA -400mA -500mA, -50mA 10MHz 2SB928A

    2SB0928

    Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
    Text: Power Transistors 2SB0928, 2SB0928A 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO V –180 Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C


    Original     		PDF 2SB0928, 2SB0928A 2SB928, 2SB928A) 2SB0928 2SB0928 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A

    2SD1250

    Abstract: 2SD1250A 2SB0928 2SB0928A 2SB928 2SB928A IC1102
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm


    Original     		PDF 2002/95/EC) 2SB0928 2SB928) 2SB0928A 2SB928A) 2SD1250 2SD1250A 2SD1250A 2SB0928 2SB0928A 2SB928 2SB928A IC1102

    2SB0928

    Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
    Text: Power Transistors 2SB0928 2SB928 , 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SB0928 2SB928) 2SB0928A 2SB928A) 2SD1250 2SD1250A 2SB0928 2SB0928A 2SB928 2SB928A 2SD1250A

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB928A TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High collector to emitter VCEO Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		PDF 2SB928A O-252 -150mA -400mA -500mA, -50mA 10MHz

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm


    Original     		PDF 2002/95/EC) 2SB0928 2SB928) 2SB0928A 2SB928A) 2SD1250 2SD1250A 2SB0928A

    2SB928

    Abstract: 2SB928A 2SD1250 2SD1250A
    Text: Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO –180 V Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C dissipation


    Original     		PDF 2SB928, 2SB928A 2SB928 2SB928 2SB928A 2SD1250 2SD1250A

    2SB928

    Abstract: 2SB928A 2SD1250 2SD1250A
    Text: Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A ● 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 High forward current transfer ratio hFE which has satisfactory linearity


    Original     		PDF 2SD1250, 2SD1250A 2SB928 2SB928A 2SB928A 2SD1250 2SD1250A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm


    Original     		PDF 2002/95/EC) 2SB0928 2SB928) 2SB0928A 2SB928A) 2SD1250 2SD1250A 2SB0928A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


    Original     		PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    2SB0928

    Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
    Text: Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type ● ● ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE sat N type package enabling direct soldering of the radiating fin to


    Original     		PDF 2SD1250, 2SD1250A 2SB0928 2SB928) 2SB0928A 2SB928A) 2SB0928 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


    Original     		PDF 2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB928, 2SB928A 2SB928, 2SB928A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SD1250, 2SD1250A •Features U nit i • High çollector-emitter voltage V ceo)


    OCR Scan     		PDF 2SB928, 2SB928A 2SD1250, 2SD1250A 2SB928

    2SB928

    Abstract: 18-SO 2SB928A 2SD1250 2SD1250A J1213
    Text: Power T ransistors 2SB928, 2SB928A 2SB928, 2SB928A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SD 1250, 2SD1250A Unit • i 8.7max. 6.5max. • Features • High çollector-emitter voltage V c e o


    OCR Scan     		PDF 2SB928, 2SB928A 2SD1250, 2SD1250A 2SB928 18-SO 2SB928A 2SD1250 2SD1250A J1213

    Untitled

    Abstract: No abstract text available
    Text: 2SD1250, 2SD1250A Power Transistors 2SD1250, 2SD1250A Silicon NPN Triple-Diffused Planar Type • Package Dim ensions Power A m plifier TV Vertical D eflection O utput Com plem entary Pair with 2SB928, 2SB928A ■ Features • High DC c u r re n t gain ht t an d good lin earity


    OCR Scan     		PDF 2SD1250, 2SD1250A 2SB928, 2SB928A 2SD1250

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


    OCR Scan     		PDF 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    2SD1250A

    Abstract: IC vertical panasonic 2SD1245 2SD1249 2SD1249A 2SD1250 T0220AB
    Text: PANASONIC INDL/ELEK-CSEUI} 72C D | tl ' i a a A S M DDDISSD 7 1 2SD1245 2SD1245 U > h " y / S \ N P N Triple Diffused Planar Darlington v U =i > N P N H i Unit \ mm J= $1:;f)ig'llS ffl/''A F Pow er Amplifier • it • 10.5 ± 0.5 9.8max. etq 7.6min. Oh


    OCR Scan     		PDF 2SD1245 2SDT245 2SD1250A IC vertical panasonic 2SD1245 2SD1249 2SD1249A 2SD1250 T0220AB

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398