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    2SB819 Search Results

    2SB819 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB819 Panasonic Silicon PNP Transistor Original PDF
    2SB819 Panasonic Silicon PNP epitaxial planer type transistor Original PDF
    2SB819 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB819 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB819 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB819 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB819 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB819 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB819 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB819 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB819 Unknown Cross Reference Datasheet Scan PDF

    2SB819 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1051

    Abstract: 2SB819
    Text: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB819 Unit: mm 6.9±0.1 1.5 1.0 0.85 4.5±0.1 4.1±0.2 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.


    Original     		PDF 2SD1051 2SB819 2SD1051 2SB819

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB0819 2SB819) 2SD1051

    2sd1051

    Abstract: 2SB0819 2SB819
    Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current


    Original     		PDF 2SB0819 2SB819) 2SD1051 2sd1051 2SB0819 2SB819

    2sd1051

    Abstract: 2SB0819 2SB819 japanese transistor manual
    Text: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.7 4.5±0.1 R 0.9 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.


    Original     		PDF 2SB0819 2SB819) 2SD1051 2sd1051 2SB0819 2SB819 japanese transistor manual

    2sd1051

    Abstract: 2SB0819 2SB819
    Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 R 0.9 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC


    Original     		PDF 2SD1051 2SB0819 2SB819) 2sd1051 2SB0819 2SB819

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V VEBO −5 V Collector current


    Original     		PDF 2SB0819 2SB819) 2SD1051

    583 transistor

    Abstract: 2sd1051 2SB0819 2SB819
    Text: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.


    Original     		PDF 2SD1051 2SB0819 2SB819) 583 transistor 2sd1051 2SB0819 2SB819

    2sd1051

    Abstract: 2SB0819 2SB819
    Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SD1051 2SB0819 2SB819) 2sd1051 2SB0819 2SB819

    2N4250 motorola

    Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a


    Original     		PDF BC160 2N3581 MMBA956H5 2N5819 GES5819 TP5819 D29E6 TIS93 2N4250 motorola bc154 KT501S LOW-POWER SILICON PNP BC313-16

    583 transistor

    Abstract: No abstract text available
    Text: Transistor 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.


    Original     		PDF 2SD1051 2SB0819 2SB819) 583 transistor

    2sd1051

    Abstract: 2SB0819 2SB819
    Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB0819 2SB819) 2SD1051 2sd1051 2SB0819 2SB819

    japanese transistor manual

    Abstract: 2sd1051 hFE is transistor to-220 2SB0819 2SB819
    Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open)


    Original     		PDF 2SD1051 2SB0819 2SB819) japanese transistor manual 2sd1051 hFE is transistor to-220 2SB0819 2SB819

    2SB0819

    Abstract: 2SB819 2SD1051
    Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO −50 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB0819 2SB819) 2SD1051 2SB0819 2SB819 2SD1051

    2SB819

    Abstract: 2SD1051
    Text: Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as


    Original     		PDF 2SB819 2SD1051 2SB819 2SD1051

    2sd1051

    Abstract: 2SB0819 2SB819
    Text: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 6.9±0.1 1.5 * Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage


    Original     		PDF 2SD1051 2SB0819 2SB819) 2sd1051 2SB0819 2SB819

    K020

    Abstract: 2SB0819 2SB819 2SD1051
    Text: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 6.9±0.1 Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –40 V Emitter to base voltage


    Original     		PDF 2SB0819 2SB819) 2SD1051 K020 2SB0819 2SB819 2SD1051

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD1028

    Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A


    Original     		PDF 2SD1001 2SB800 2SD1002 2SD1003 2SD1004 2SD1005 2SB804 2SD1006 2SB805 2SD1007 2SD1028 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004

    2SA933S

    Abstract: 2SB737 2SA1302 TOSHIBA 2sb1425 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
    Text: 27 - 55 € Type No. tt € Manuf. B SANYO TOSHIBA 2SA 1285 - H # 2SA1208 2SA1145 2SA 1285A H « 2SA1208 2SA1020 2 S A 1286 , H 2 S A 1287 J 2SA1770 * 2 S A 1288 2SA 1289 , 2 S A 1290 ✓ & T MATSUSHITA — A ROHM 2SA1124 2SA1282 2SA1124 2SB1212 2SB1068 2SB819


    OCR Scan     		PDF 2SA1285 2SA1285A 2SA1286 2SA1287J 2SA1288 2SA1289 2SA1208 2SA1770 2SA1145 2SA933S 2SB737 2SA1302 TOSHIBA 2sb1425 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175

    b 817

    Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
    Text: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818


    OCR Scan     		PDF 2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


    OCR Scan     		PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


    OCR Scan     		PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A