Untitled
Abstract: No abstract text available
Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)
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2SB0819
2SB819)
2SD1051
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2sd1051
Abstract: 2SB0819 2SB819
Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current
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2SB0819
2SB819)
2SD1051
2sd1051
2SB0819
2SB819
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2sd1051
Abstract: 2SB0819 2SB819 japanese transistor manual
Text: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.7 4.5±0.1 R 0.9 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.
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2SB0819
2SB819)
2SD1051
2sd1051
2SB0819
2SB819
japanese transistor manual
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2sd1051
Abstract: 2SB0819 2SB819
Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 R 0.9 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC
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2SD1051
2SB0819
2SB819)
2sd1051
2SB0819
2SB819
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V VEBO −5 V Collector current
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2SB0819
2SB819)
2SD1051
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583 transistor
Abstract: 2sd1051 2SB0819 2SB819
Text: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.
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2SD1051
2SB0819
2SB819)
583 transistor
2sd1051
2SB0819
2SB819
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2sd1051
Abstract: 2SB0819 2SB819
Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SD1051
2SB0819
2SB819)
2sd1051
2SB0819
2SB819
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583 transistor
Abstract: No abstract text available
Text: Transistor 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 6.9±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 2.0±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.
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2SD1051
2SB0819
2SB819)
583 transistor
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2sd1051
Abstract: 2SB0819 2SB819
Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)
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2SB0819
2SB819)
2SD1051
2sd1051
2SB0819
2SB819
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japanese transistor manual
Abstract: 2sd1051 hFE is transistor to-220 2SB0819 2SB819
Text: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open)
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2SD1051
2SB0819
2SB819)
japanese transistor manual
2sd1051
hFE is transistor to-220
2SB0819
2SB819
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2SB0819
Abstract: 2SB819 2SD1051
Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO −50 V Collector-emitter voltage (Base open)
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2SB0819
2SB819)
2SD1051
2SB0819
2SB819
2SD1051
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.7 4.5±0.1 R 0.9 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.
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2SB0819
2SB819)
2SD1051
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2sd1051
Abstract: 2SB0819 2SB819
Text: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 6.9±0.1 1.5 * Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage
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2SD1051
2SB0819
2SB819)
2sd1051
2SB0819
2SB819
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K020
Abstract: 2SB0819 2SB819 2SD1051
Text: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 6.9±0.1 Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –40 V Emitter to base voltage
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2SB0819
2SB819)
2SD1051
K020
2SB0819
2SB819
2SD1051
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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OCR Scan
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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T0-92
T092L:
T0220F
T0220
T092NL
A1534
T092
2SB642
T092L
2SB0774
SS-Mini 3
2SA1495
2SB946
2SA1124
A1534A
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2SC5224
Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A
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OCR Scan
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O-126
O-202
T0-220
2SC1398A
2SB1573
2SD2407
O-220F
T0220F
T0220
2SC5224
2SA1949
2SD2407
A1534A
2SB0774
2SB1576
2SB946
T0-92N
2SA1951
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