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Toshiba America Electronic Components 2SB1557 POWER BIPOLAR TRANSISTOR, 7A I(C), 140V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN
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Quest Components	2SB1557		43			1 $1.8 10 $1.656 100 $1.44 1000 $1.44 10000 $1.44	Buy Now

2SB1557 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB1557	Unknown	Silicon PNP-darlington transistor	Scan	PDF
2SB1557	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB1557	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1557	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1557	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB1557	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1557	Toshiba	Silicon PNP transistor for power amplifier applications	Scan	PDF
2SB1557	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)	Scan	PDF
2SB1557A	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB1557B	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB1557C	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2SB1557 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SD2386 Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION	Original	2SD2386 2SB1557 2SD2386 2SB1557 NPN POWER DARLINGTON TRANSISTORS	PDF
B1557 Abstract: 2SB1557 2SD2386 Text: 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1557 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 Maximum Ratings (Tc = 25°C) Characteristics Symbol	Original	2SB1557 2SD2386 2-16C1A B1557 2SB1557 2SD2386	PDF
2SD2386 Abstract: 2SB1557 npn DARLINGTON 10A Text: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION	Original	2SD2386 2SB1557 2SD2386 2SB1557 npn DARLINGTON 10A	PDF
D2386 Abstract: D2386 TOSHIBA 2SB1557 2SD2386 Text: 2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics	Original	2SD2386 2SB1557 2-16C1A D2386 D2386 TOSHIBA 2SB1557 2SD2386	PDF
D2386 Abstract: 2SB1557 2SD2386 Text: 2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Symbol	Original	2SD2386 2SB1557 2-16C1A D2386 2SB1557 2SD2386	PDF
b1557 Abstract: No abstract text available Text: 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1557 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 Absolute Maximum Ratings (Tc = 25°C) Characteristics	Original	2SB1557 2SD2386 2-16C1A b1557	PDF
2SC4793 2sa1837 Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303 Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688	Original	2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303	PDF
D2386 TOSHIBA Abstract: No abstract text available Text: 2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SD2386 2SB1557 2-16C1A D2386 TOSHIBA	PDF
TRANSISTOR DATASHEET D1555 Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440	Original	2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878	PDF
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717	PDF
Untitled Abstract: No abstract text available Text: 2SB1557- SILICON PNP EPITAXIAL TYPE DARLINGTON POWER U nit in mm POW ER AM PLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2 S D 2 3 8 6 03.2*0.2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SB1557· --140V 2-16C1A	PDF
2SB1557 Abstract: 2SD2386 Text: TOSHIBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 557 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
2SB1557 Abstract: 2SD2386 Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 03.2 ±0.2 1 5.9 M A X . High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Tc = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
TOSHIBA Transistor Silicon PNP Epitaxial Type Abstract: 2SB1557 2SD2386 Text: 2SB1557 TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 3.2 ± 0 .2 15.9M AX High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2386 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SB1557 --140V 2SD2386 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1557	PDF

2SB1557 Abstract: 2SD2386 Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1557 03.2 ±0.2	OCR Scan	2SD2386 2SB1557 2SD2386	PDF
2SB1557 Abstract: 2SD2386 Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
Untitled Abstract: No abstract text available Text: 2SB1557 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 ¿ 3 .2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386	PDF
2SB1557 Abstract: 2SD2386 Text: TO SH IBA 2SD2386 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W E R A M PLIFIER APPLICATIONS 03.2 ± 0.2 1 5.9 MAX. • • High Breakdown Voltage : V q e O = 140 V (Min.) Complementary to 2SB1557	OCR Scan	2SD2386 2SB1557 2SD2386	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 1 <mm; mmr R 1m S h t S v 7» Unit in mm PO W ER AM PLIFIER APPLICATIONS 15.9MAX. High Breakdown Voltage : V c e o = —140V (Min.) Complementary to 2SD2386 1 J-	OCR Scan	2SB1557 --140V 2SD2386	PDF
2SB1557 Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2386 U nit in mm POWER AMPLIFIER APPLICATIONS • • 15.9M A X High Breakdown Voltage : V q e O = 140V (Min.) C o m p le m e n ta ry to 2SB1557 ¿ 3 .2 1 0-2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SD2386 2SB1557	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SD2386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2386 High Breakdown Voltage : V^EO = 140 V (Min.) Complementary to 2SB1557 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SD2386 2SB1557	PDF
2SB1557 Abstract: 2SD2386 Text: TO SH IBA 2SD2386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2386 Unit in mm 1 5.9 M A X . • • 03.2 ± 0.2 High Breakdown Voltage : V q e O = 140 V (Min.) Complementary to 2SB1557 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SD2386 2SB1557 2SD2386	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102	PDF

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2SB1557 Search Results

2SB1557 Price and Stock

Toshiba America Electronic Components 2SB1557

2SB1557 Datasheets (11)

2SB1557 Datasheets Context Search

2SD2386

B1557

2SD2386

D2386

D2386

b1557

2SC4793 2sa1837

D2386 TOSHIBA

TRANSISTOR DATASHEET D1555

STk442-130

Untitled

2SB1557

2SB1557

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SB1557

2SB1557

Untitled

2SB1557

Untitled

2SB1557

Untitled

2SB1557

15J102

2sC5200, 2SA1943, 2sc5198