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    2SB1185 Search Results

    2SB1185 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1185 ROHM Silicon PNP Transistor Original PDF
    2SB1185 ROHM Power Transistor (-60V, -3A) Original PDF
    2SB1185 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB1185 Various Russian Datasheets Transistor Original PDF
    2SB1185 Unknown Scan PDF
    2SB1185 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1185 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1185 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1185 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1185 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1185 ROHM TO-220, TO-220FP, TO-220FN, HRT Transistors Scan PDF

    2SB1185 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1185

    Abstract: 2SD1762
    Text: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION


    Original     		PDF 2SB1185 O-220Fa 2SD1762 -500mA 2SB1185 2SD1762

    2SB1185

    Abstract: 2SD1762 2sb118
    Text: SavantIC Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING


    Original     		PDF 2SB1185 O-220Fa 2SD1762 -500mA 2SB1185 2SD1762 2sb118

    2SB1185

    Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
    Text: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243

    2SB1185

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60


    Original     		PDF O-220 2SB1185 O-220 30MHz 2SB1185

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector Saturation Voltage z Complement to Type 2SD1762 2. COLLECTOR 3. EMITTER APPLICATIONS z For Use in Low Frequency Power Amplifier


    Original     		PDF O-220 2SB1185 2SD1762 30MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SB1185 Plastic-Encapsulate Transistors PNP Features TO-220 Power dissipation PCM: 2 W Tamb=25℃ Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER


    Original     		PDF 2SB1185 O-220 30MHz

    2SD1762

    Abstract: 2SB1185
    Text: Inchange Semiconductor Product Specification 2SD1762 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SB1185 APPLICATIONS ・For low frequency power amplifier applications PINNING


    Original     		PDF 2SD1762 O-220Fa 2SB1185 O-220Fa) 30MHz 2SD1762 2SB1185

    2SD1760

    Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
    Text: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SB1185 TRANSISTOR PNP TO-220F FEATURES Low VCE(sat): VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) 1. BASE 2. COLLECTOR MAXIMUM RATINGS* Ta=25℃ unless otherwise noted Symbol


    Original     		PDF O-220F 2SB1185 O-220F 30MHz

    2SB1185

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SB1185 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-220 2SB1185 O-220 30MHz 2SB1185

    2SB1185

    Abstract: No abstract text available
    Text: 2SB1185 2SB1185 TRANSISTOR PNP TO-220 FEATURES 1. BASE Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SB1185 O-220 30MHz 2SB1185

    2SB1185

    Abstract: transistor 2sb1185 2SD1762
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762


    Original     		PDF 2SB1185 2SD1762 30MHz 2SB1185 transistor 2sb1185 2SD1762

    2SD1762

    Abstract: 2SB1185
    Text: SavantIC Semiconductor Product Specification 2SD1762 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN


    Original     		PDF 2SD1762 O-220Fa 2SB1185 O-220Fa) 30MHz 2SD1762 2SB1185

    2SB1185

    Abstract: 2SD1762
    Text: Inchange Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications


    Original     		PDF 2SB1185 O-220Fa 2SD1762 -500mA 2SB1185 2SD1762

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SB1185

    Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
    Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re


    OCR Scan     		PDF 2SB1184/2SB1243/2SB1185 2SD1760/ 2SD1864/2SD1762. 2SB1184 2SB1243 SC-63 2SB1185 O-220FP SC-67 2SB1185 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185

    d 1762

    Abstract: No abstract text available
    Text: h -7 > v X £ /Transistors 2SB1185 7 1 7 ' i s - i - M P N P y ' J ^ > b y > 2 S B 1 1 8 5 v X $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • v H ilS l/ D in ie n sio n s U n it: mm) 1 ) V cE (sat) V c E ( s a t ) = - 0 .5 V ( T y p . )


    OCR Scan     		PDF 2SB1185 2SD1762 111Base d 1762

    B1185

    Abstract: b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185
    Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) VcE(sat) (Ic / I b 2) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). = —0.5V (Typ.) = -2 A /-0 .2 A ) C o m p le m e n ts th e 2 S D 1 7 6 0 / 2 S D 1 8 64 / 2 S D 1 762.


    OCR Scan     		PDF 1184/2S B1243/2S B1185 2SB1184/2SB1243/2SB1185 O-126 O-220, 0Dlb713 O-220FN O-220FN O220FP B1185 b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185

    2SD1762

    Abstract: 230S d1760 D1864
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type


    OCR Scan     		PDF 2SD1760/2SD1864/2SD1762 2SB1184/ 1243/2SB1185. 2SD1760 2SD1864 2SD1762 O-126 O-220, 0Dlb713 230S d1760 D1864

    TRANSISTOR d1760

    Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type


    OCR Scan     		PDF 2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 d1762 f g

    2sB1185

    Abstract: No abstract text available
    Text: / I ransistors h -7 O C D A Q 4 C 2SB1185 i k ^ ;i f y 7 i i ' 7 , l / - t ^ P N P '> U = i> h 7 > y ' 7 ^ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • £t-Jfi^Ji±[2|/Dimensions U n it: mm 1) VcE(sat) t f - 0 . 5 V ( T y p . lir 'f g v - 'o


    OCR Scan     		PDF 2SB1185 2SD1762 -22QFP 2SB1185

    2SD1761

    Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188
    Text: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215


    OCR Scan     		PDF 2SB1184 2sb1184f5 2SBU85 2SB1186 2sb1186a 2sb1187 2SB1188 2SB1209 2SD1812 SC-51 2SD1761 2sb1216 2SB1220 2sb118 2SB1204 2SB1208

    b1185

    Abstract: b1184 y206
    Text: Transistors Power Transistor -6 0 V, - 3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) ►External dim ensions (Units: mm) LOW VcE(sat}. VcE(sat) = —0 .5 V (Typ.) (Ic / I b 2) = - 2 A /- 0 .2 A ) Com plem ents the 2 S D 1 7 6 0 / 2 S D 1 8 6 4 /2 S D 1 7 6 2 .


    OCR Scan     		PDF 2SB1184/2SB1243/2SB1185 96-128-B57) 2SB1184 2SB1243 2SB1185 2SB1184) 2SB1243) 2SB1185) b1185 b1184 y206

    2SB1335A

    Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
    Text: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)


    OCR Scan     		PDF 3SK212 O-220, O-220FP, 2SD1562 2SB1085 2SD1763 2SB1186 2SD2033 2SB1353 2SD1562A 2SB1335A 2SD2037 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856