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    2SB1189 Search Results

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    2SB1189 Price and Stock

    ROHM Semiconductor 2SB1189T100Q

    TRANS PNP 80V 0.7A MPT3
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    DigiKey 2SB1189T100Q Reel 1,000 1,000
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    2SB1189T100Q Cut Tape 1
    • 1 $0.62
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    • 100 $0.3703
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    2SB1189T100Q Digi-Reel 1
    • 1 $0.62
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    Mouser Electronics 2SB1189T100Q 622
    • 1 $0.62
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    ROHM Semiconductor 2SB1189T100R

    TRANS PNP 80V 0.7A MPT3
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    DigiKey 2SB1189T100R Reel 1,000 1,000
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    2SB1189T100R Cut Tape 71 1
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    2SB1189T100R Digi-Reel 1
    • 1 $0.62
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    Mouser Electronics 2SB1189T100R 196
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    Bristol Electronics 2SB1189T100R 12,000
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    Quest Components 2SB1189T100R 9,600
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    2SB1189T100R 79,200
    • 1 $0.53
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    ROHM Semiconductor 2SB1189T100Q/R

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    Bristol Electronics 2SB1189T100Q/R 230 5
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    Quest Components 2SB1189T100Q/R 184
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    ROHM Semiconductor 2SB1189T113Q

    SMALL SIGNAL BIPOLAR TRANSISTOR, 0.7A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON
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    Quest Components 2SB1189T113Q 1,000
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    2SB1189T113Q 1,000
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    2SB1189 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1189 Kexin Medium Power Transistor Original PDF
    2SB1189 ROHM Medium power transistor Original PDF
    2SB1189 TY Semiconductor Medium Power Transistor - SOT-89 Original PDF
    2SB1189 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1189 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1189 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1189 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1189 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SB1189 ROHM Transistor Selection Guide Scan PDF
    2SB1189T100P ROHM Medium Power Transistor (-80 V, -0.7 A) Original PDF
    2SB1189T100Q ROHM Medium Power Transistor (-80 V, -0.7 A) Original PDF
    2SB1189T100Q ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 0.7A SOT-89 Original PDF
    2SB1189T100R ROHM Medium Power Transistor (-80 V, -0.7 A) Original PDF
    2SB1189T100R ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 0.7A SOT-89 Original PDF

    2SB1189 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD transistor

    Abstract: smd marking BD 2SB1189 BD marking
    Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80


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    PDF 2SB1189 -500mA -50mA 100MHz BD transistor smd marking BD 2SB1189 BD marking

    marking BDR

    Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


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    PDF OT-89 2SB1189 2SD1767 -100mA -500mA -50mA -50mA 100MHz marking BDR 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR


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    PDF OT-89-3L OT-89-3L 2SD1767 2SB1189 100mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-89-3L 2SB1189 OT-89-3L 2SD1767 -100mA -500mA -50mA -50mA 100MHz

    2Sb1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    PDF 2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2Sb1238 2SD1859 T100 ic T100 bd marking code transistor ROHM

    3072 rohm

    Abstract: 6440 diode 2SB1189
    Text: SPICE PARAMETER 2SB1189 by ROHM TR Div. * 2SB1189 PNP BJT model * Date: 2006/11/17 .MODEL 2SB1189 PNP + IS=300.00E-15 + BF=228.01 + VAF=20.700 + IKF=.85858 + ISE=300.00E-15 + NE=1.3435 + BR=14.770 + VAR=100 + IKR=6.6440 + ISC=13.781E-12 + NC=1.3072 + NK=.6702


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    PDF 2SB1189 Q2SB1189 00E-15 781E-12 88E-12 978E-12 0758E-9 08E-9 3072 rohm 6440 diode 2SB1189

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80 V Emitter-base Voltage


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    PDF 2SB1189 -500mA -50mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278


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    PDF 2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 96-618-B13) 96-750-D13)

    transistor 2sb1238

    Abstract: 2sb1238
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    PDF 2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 transistor 2sb1238

    2SD1859

    Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    PDF 2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 SC-62 2SD1859 2SB1238 T100 sc621

    2SD1859

    Abstract: No abstract text available
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    PDF 2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62

    2SD1859

    Abstract: 2SD1767 2SB1189 2SB1238 T100
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    PDF 2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 2SB1238 T100

    2SB1238

    Abstract: No abstract text available
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation


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    PDF 2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 R1010A

    2SB1189

    Abstract: 2SB1238 2SD1767 2SD1859 T100
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    PDF 2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2SB1238 2SD1859 T100

    marking 07 sot89

    Abstract: No abstract text available
    Text: 2SB1189 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features — — 0.8 MIN High breakdown voltage Complements to 2SD1767 0.44 0.37 Parameter B 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)


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    PDF 2SB1189 OT-89 OT-89 2SD1767 -100mA -500mA -50mA 100MHz marking 07 sot89

    2SB1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage


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    PDF 2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 2SD1859 T100

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    l289

    Abstract: No abstract text available
    Text: Is 7 > V X $ /Transistors 2SB1189 /M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistor • 4^JfiTj-;£[21/D iin e n s io n s Unit : mm 1 ) = i u ' ? i i j a ^ P c = 2 w r ' * 5 [, (4 0 x -7 40X0.7mm-tz 7 S 2) ra R E E , V ifc V ceo= - 80V, X


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    PDF 2SB1189 40X40X0 2SD1767 l289

    Q2SB1189

    Abstract: No abstract text available
    Text: 2SB1189 h "7 > ' s Z $ / T ransistors 0 Q D 4 4 0 Q PNP y ' J : l > S ; 7 > v * * Epitaxial Planar PNP Silicon Transistor Power Amp. • 1$* • W fM ííE l/ D im e n s io n s Unit : mm 1 ) 3 L ^ * » * P c = 2 W T '* $ o (40 X 4 0 X 0 .7 m m -b 7 5 v ? £ * 6 { iffl0 # )


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    PDF 2SB1189 2SD1767 40X40 SC-62 2SD1767. Q2SB1189

    2SD1659

    Abstract: 2SB689F 2sb123b
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)


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    PDF 2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F --80V, 2SB123B 2SB689F -126FP 2SD1659

    SS138

    Abstract: 2SB1189 2SB1238 2SB889F 2SB899F 2SD1767 2SD1859 2SB899
    Text: 2SB1189 12SB1238 / 2SB899F 2SD1767 / 2SD1859 12SD1200F T ra n sisto rs I M e d iu m P o w e r T r a n s is t o r — 80V, — 0.7A 2 S B 1 189 / 2S B 1238 / 2S B 889F • A b s o l u t e m a x im u m r a t in g * ( T a — 2 5 ^ ) • F * a tu r* * 1 > H i g h b r e a k d o w n v o t in g o . B V e c o


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    PDF 2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 12SD1200F 2SB889F PSB1189 SS138 2SB889F 2SB899

    Untitled

    Abstract: No abstract text available
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)


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    PDF 2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 2SB889F 2SD1767/2SD1859/2SD1200F.

    Untitled

    Abstract: No abstract text available
    Text: 2SB1189 N 7 > V ^ £ /Transistors 9 Q R 1 1 A Q « w D • x tf$ *y 7 J i'y is -ïB P N P '> v = i> b 7 > y z 2 Epitaxial Planar PNP Silicon Transistor /Medium Power Amp. • fl-Jl^iäslil/D im ensions Unit : mm • ttft 1 )3 U -7 $ i*^ P c = 2 W T '< fe 5 0 (40 X


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    PDF 2SB1189 2SD1767. 25ions

    2SD1761

    Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188
    Text: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215


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    PDF 2SB1184 2sb1184f5 2SBU85 2SB1186 2sb1186a 2sb1187 2SB1188 2SB1209 2SD1812 SC-51 2SD1761 2sb1216 2SB1220 2sb118 2SB1204 2SB1208