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    2SB118 Price and Stock

    ROHM Semiconductor 2SB1182TLQ

    TRANS PNP 32V 2A CPT3
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    2SB1182TLQ 457 162
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    Quest Components 2SB1182TLQ 1,746
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    2SB1182TLQ 400
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    2SB1182TLQ 7,916
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    CoreStaff Co Ltd 2SB1182TLQ 457
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    ROHM Semiconductor 2SB1181TLR

    TRANS PNP 80V 1A CPT3
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    DigiKey 2SB1181TLR Cut Tape 2,446 1
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    Mouser Electronics 2SB1181TLR 340
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    ROHM Semiconductor 2SB1182TLR

    TRANS PNP 32V 2A CPT3
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    DigiKey 2SB1182TLR Cut Tape 2,080 1
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    Mouser Electronics 2SB1182TLR 1,623
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    Quest Components 2SB1182TLR 560
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    ROHM Semiconductor 2SB1188T100Q

    TRANS PNP 32V 2A MPT3
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    Mouser Electronics 2SB1188T100Q 16,974
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    2SB1188T100Q 876
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    2SB1188T100Q 440
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    2SB1188T100Q 456
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    Rutronik 2SB1188T100Q Reel 1,000 1,000
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    ROHM Semiconductor 2SB1188T100R

    TRANS PNP 32V 2A MPT3
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    Find more 2SB118 price and stock on Findchips.com

    2SB118 Datasheets (199)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB118 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB118 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB118 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB118 Unknown Cross Reference Datasheet Scan PDF
    2SB118 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB118 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB118 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB118 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB118 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1180 Panasonic TRANS DARLINGTON PNP 60V 8A 3I-G1 Original PDF
    2SB1180 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB1180 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1180 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1180 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1180 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1180 Panasonic Power Transistors Scan PDF
    2SB1180A Panasonic TRANS DARLINGTON PNP 80V 8A 3I-G1 Original PDF
    2SB1180A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB1180A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1180A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ...

    2SB118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD transistor

    Abstract: smd marking BD 2SB1189 BD marking
    Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80


    Original     		PDF 2SB1189 -500mA -50mA 100MHz BD transistor smd marking BD 2SB1189 BD marking

    2SB1185

    Abstract: 2SD1762
    Text: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION


    Original     		PDF 2SB1185 O-220Fa 2SD1762 -500mA 2SB1185 2SD1762

    SMD TRANSISTOR MARKING 2A

    Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
    Text: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage


    Original     		PDF 2SB1188 100ms 30MHz SMD TRANSISTOR MARKING 2A smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc

    2SB1187

    Abstract: 2SD1761
    Text: Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS


    Original     		PDF 2SB1187 O-220Fa 2SD1761 2SB1187 2SD1761

    transistor 2sb1184

    Abstract: 2SB1184
    Text: Transistors SMD Type Power transistor 2SB1184 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15


    Original     		PDF 2SB1184 O-252 30MHz transistor 2sb1184 2SB1184

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO


    Original     		PDF 2SB1188 100ms 30MHz

    2SB1185

    Abstract: 2SD1762 2sb118
    Text: SavantIC Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING


    Original     		PDF 2SB1185 O-220Fa 2SD1762 -500mA 2SB1185 2SD1762 2sb118

    2SD1763 transistor

    Abstract: 2SB1186 2SD1763 2sb1186 equivalent 15 A PNP POWER TRANSISTOR
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SD1763 APPLICATIONS ·Power amplifier applications.


    Original     		PDF 2SB1186 -120V 2SD1763 -100V; 30MHz 2SD1763 transistor 2SB1186 2SD1763 2sb1186 equivalent 15 A PNP POWER TRANSISTOR

    2SB1185

    Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
    Text: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243

    marking BDR

    Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		PDF OT-89 2SB1189 2SD1767 -100mA -500mA -50mA -50mA 100MHz marking BDR 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82

    2SB1185

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60


    Original     		PDF O-220 2SB1185 O-220 30MHz 2SB1185

    Untitled

    Abstract: No abstract text available
    Text: 2SB1184-P MCC TM Micro Commercial Components Features • • • • • 2SB1184-Q   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1184-R PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SB1184-P 2SB1184-Q 2SB1184-R 150rovements

    2SB1188-R

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1188-P 2SB1188-Q 2SB1188-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Lead Free Finish/RoHS Compliant "P" Suffix designates • • •


    Original     		PDF 2SB1188-P 2SB1188-Q 2SB1188-R

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
    Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated


    Original     		PDF 2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 2SB1241 2SD1733 2SD1863 2SD1898

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR


    Original     		PDF OT-89-3L OT-89-3L 2SD1767 2SB1189 100mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L 2SB1189 OT-89-3L 2SD1767 -100mA -500mA -50mA -50mA 100MHz

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864 2SB1184 SC-63
    Text: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


    Original     		PDF 2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R0039A 2SB1243 2SD1864 2SB1184 SC-63

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


    Original     		PDF 2SD1766-die 2SB1188-die

    Untitled

    Abstract: No abstract text available
    Text: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.


    Original     		PDF 2SB1183 2SB1239 2SD1759 2SD1861. 2SB1183 SC-63

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		PDF 2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A

    103 transistor

    Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
    Text: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)


    OCR Scan     		PDF 2SB1183F5 SC-63) B1183 2SD1759 2SB1183F5 001470a 001471G 2SB1183F5, 103 transistor marking code SSs transistor PNP 2sb transistor LB 122 transistor

    Untitled

    Abstract: No abstract text available
    Text: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390


    OCR Scan     		PDF Ta-25 2SB1132 2SA1900 2SB1184 2SB1182 2SB1181 OT-89)

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO L T D i> 40E ' 7626^1 OQQSS7S h 7 > ÿ ^ i f / T ransistors Ô ^IRHM 2SB1186 T -2 3 -t - 2 S B - f U — r m P H P 1 1 ; h 7 > y X <? Î î ! E J l } $ l Ì : f t i Ì lÌÌffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor


    OCR Scan     		PDF 2SB1186 2SD1763.

    ScansU9X27

    Abstract: No abstract text available
    Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)


    OCR Scan     		PDF 2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27