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    2SA1802 Search Results

    2SA1802 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1802 Toshiba PNP transistor Original PDF
    2SA1802 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1802 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1802 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1802 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1802 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1802 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1802 Toshiba SILICON PNP EPITAXIAL TYPE TRANSISTOR Scan PDF
    2SA1802 Toshiba Silicon PNP transistor for strobe flash applications and medium power amplifier applications Scan PDF
    2SA1802A Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SA1802 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681

    TOSHIBA Transistor Silicon PNP Epitaxial Type

    Abstract: 2SA1802 2SC4681 A1802
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 2SC4681 A1802

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681

    2SA1802

    Abstract: A1802 toshiba last digit of year "medium power Amplifier" 7B1A 2SC4681
    Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)


    Original     		PDF 2SA1802 2SC4681 2SA1802 A1802 toshiba last digit of year "medium power Amplifier" 7B1A 2SC4681

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		PDF 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor

    C4681

    Abstract: 7B1A 2SA1802 2SC4681
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802 C4681 7B1A 2SA1802 2SC4681

    Untitled

    Abstract: No abstract text available
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    Untitled

    Abstract: No abstract text available
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802

    7B1A

    Abstract: 2SA1802 2SC4681 C4681
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802 7B1A 2SA1802 2SC4681 C4681

    Untitled

    Abstract: No abstract text available
    Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)


    Original     		PDF 2SC4681 2SA1802

    Untitled

    Abstract: No abstract text available
    Text: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm A MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., < 0.6M AX. -tf- 5.2 ±0 .2 rll • Excellent hjpg Linearity • h -n n • * * rH i • •


    OCR Scan     		PDF 2SA1802 2SC4681 95IV1AX.

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1802 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. U nit in mm & 8 MAX. • Excellent h p g Linearity : h pE l = 200"-600 (V c e = —2V, I(j = —0.5A)


    OCR Scan     		PDF 2SA1802 --60mA) 2SC4681

    7B1A

    Abstract: 2SA1802 2SC4681 A1802
    Text: 2SA1802 TO SHIBA TENTATIVE 2 S A 1 802 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS. M E D IU M POWER AMPLIFIER APPLICATIONS. • a 8 MAX. Excellent hEE Linearity : hFE 1 = 200-600(VCE= -2 V , Ic = -0.5A) : hFE(2) = 140 (Min.) (VCE = -2 V , IC= -3 A )


    OCR Scan     		PDF 2SA1802 2SC4681 7B1A 2SA1802 A1802

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE STROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE i = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = -3 A )


    OCR Scan     		PDF 2SA1802 2SC4681

    2sa1902

    Abstract: No abstract text available
    Text: 2SA1802 SILICON PNP EPITAXIAL TYPE TENTATIVE DATA 2SA1902 U nit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • • • Excellent h fE Linearity : h F E (i) = 200~600(V c e = —2V, I ( j = —0.5A) : h F E ( 2 ) = 140 (M in .)(V cE = - 2 V , I q = - 3 A )


    OCR Scan     		PDF 2SA1802 2SA1902) 2SC4681 --10mA, --60mA 2sa1902

    2SA1802

    Abstract: 2SC4681
    Text: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • Excellent hEE Linearity : hFE l = 200-600 (Vce = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = - 3 A)


    OCR Scan     		PDF 2SA1802 2SC4681 2SA1802

    2SA1802

    Abstract: 2SC4681
    Text: T O S H IB A 2SC4681 2SC4681 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE 1 = 200-600 (Vce = 2 V, IC = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2 V, Ic = 3 A)


    OCR Scan     		PDF 2SC4681 2SA1802 2SA1802 2SC4681

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SA1802

    Abstract: 2SC4681
    Text: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4681 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS A 6.8MAX., • • • • Excellent hpg Linearity : hFE (1) = 200-600 (Vc e = 2 V, In = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2V,~IC = 3 A)


    OCR Scan     		PDF 2SC4681 2SA1802 2SA1802 2SC4681