2SA1314 Search Results

2SA1314 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1314	Kexin	Audio Power Applications	Original	PDF
2SA1314	Toshiba	PNP transistor	Original	PDF
2SA1314	TY Semiconductor	Audio Power Applications - SOT-89	Original	PDF
2SA1314	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SA1314	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1314	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1314	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SA1314	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1314	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1314	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1314	Toshiba	SOT-89 Transistors	Scan	PDF
2SA1314	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF
2SA1314	Toshiba	Silicon PNP transistor for strobe flash applications and audio power applications	Scan	PDF
2SA1314-A	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2SA1314A	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF
2SA1314-B	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1314B	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF
2SA1314-C	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1314C	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF

2SA1314 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)	Original	2SA1314 2SC2982	PDF
smd transistor 2A Abstract: smd transistor MARKING 2A 2SA1314 2SC2982 Text: Transistors SMD Type Audio Power Applications 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter	Original	2SA1314 -50mA) 2SC2982 -10mA -50mA smd transistor 2A smd transistor MARKING 2A 2SA1314 2SC2982	PDF
2SA1314 Abstract: 2SC2982 Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = −1 V, IC = −4 A)	Original	2SA1314 2SC2982 2SA1314 2SC2982	PDF
Untitled Abstract: No abstract text available Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)	Original	2SA1314 2SC2982	PDF
Untitled Abstract: No abstract text available Text: SMD Type Product specification 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -20	Original	2SA1314 -50mA) 2SC2982 -50mA	PDF
2SA1314 Abstract: 2SC2982 Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)	Original	2SA1314 2SC2982 2SA1314 2SC2982	PDF
2SA1314 Abstract: 2SC2982 Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)	Original	2SA1314 2SC2982 2SA1314 2SC2982	PDF
2SA1314 Abstract: 2SC2982 Text: 2SA1314 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1314 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線性良好です。 : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (最小), 120 (標準) (VCE = −1 V, IC = −4 A)	Original	2SA1314 2SC2982 SC-62 20070701-JA 2SA1314 2SC2982	PDF
D marking amplifier Abstract: smd transistor 2A MARKING 2A smd 2a transistor SMD MARKING 2a smd transistor MARKING 2A 2SA1314 2SC2982 smd Amplifier marking 420 Text: Transistors SMD Type Medium Power Amplifier Applications 2SC2982 Features Low Saturation Voltage : VCE sat = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage	Original	2SC2982 2SA1314 D marking amplifier smd transistor 2A MARKING 2A smd 2a transistor SMD MARKING 2a smd transistor MARKING 2A 2SA1314 2SC2982 smd Amplifier marking 420	PDF
2SA1314 Abstract: 2SC2982 Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)	Original	2SA1314 2SC2982 2SA1314 2SC2982	PDF
2SC4793 2sa1837 Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y	Original	2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor	PDF
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SA1314 2 S A 1 314 TO S H IB A TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER APPLICATIONS 1.6M AX. 4.6MAX. — J- - 1.7M AX. • High DC Current Gain and Excellent Linearity • Low Saturation Voltage	OCR Scan	2SA1314	PDF
2SA1314 Abstract: A1314 J-21 Text: 2SA1314 TO SH IBA 2 S A 1 314 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO PO W ER APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. 0.4 +0.05 High DC Current Gain and Excellent Linearity • V i t /-•X = 1 A O - R O O ( \ T n - n = _ 1 V	OCR Scan	2SA1314 2SA1314 A1314 J-21	PDF

Untitled Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE TRANSISTOR 2SA1314 STROBO FLASH APPLICATIONS. Unit in AUDIO POWER APPLICATIONS. 4.6 MAX. 1.7 MAX. P 3- FEATURES: . High DC Current Gain and Excellent Linearity : hFE D = 1 4 0 ~ 6 0 0 1.6 MAX. Û 4±Q 05 (VCE=-1V, Ic=-0.5A : hFE(2)=60 (Min.), 120 (Typ.), (VCE=-1V, IC=-4A)	OCR Scan	2SA1314 -50mA) 250mmaxa8	PDF
2SA1314 Abstract: No abstract text available Text: 2SA1314 TOSHIBA 2 S A 1 314 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO PO W ER APPLICATIONS • High DC Current Gain and Excellent Linearity : h F E (1) = 140-600 (V CE = - IV, Ie = -0.5A) : hjpE (2) = 60 (Min.), 120 (Typ.), (VCE= -1 V , IC= -4 A )	OCR Scan	2SA1314 250mm2X 2SA1314	PDF
2SA1314 Abstract: A1314 J-21 A1314 transistor Text: 2SA1314 TOSHIBA 2 S A 1 314 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. • High DC Current Gain and Excellent Linearity ViTvm m = ’ 9 ~~rüí / i \ — 1 Af)* w'/v/ (VV’ V^üí	OCR Scan	2SA1314 2SA1314 A1314 J-21 A1314 transistor	PDF
2SA1314 Abstract: A131 Transistor A131 Text: T O S H IB A 2SA1314 2 S A 1 314 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO PO W ER APPLICATIONS • High DC Current Gain and Excellent Linearity : hFE (1) = 140-600 (V c e = - I V , I c = -0 .5 A ) : hF E (2) = 60(M in.), 120 (Typ.), (VCE= _ 1 V , I c = - 4 A )	OCR Scan	2SA1314 2SA1314 A131 Transistor A131	PDF
Untitled Abstract: No abstract text available Text: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l	OCR Scan	OT-89 250mmJ 2SC2883 2SC2884 2SC2873 2SC2982 2SA1203 2SA1204 2SA1213 2SA1314	PDF
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737	PDF
2SB1547 Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718 Text: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020	OCR Scan	ZSB113Ã 2SB1223 2SB1024 2SA1718 2SB950 2SB1342 2SB1224 2SB1022 2SA1719 2SB1464 2SB1547 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718	PDF
2SC3301 Abstract: 2sa120 2SC2880 Text: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E	OCR Scan	2SC2880 2SC3301 2sa120 2SC2880	PDF
2SA1317 Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319 Text: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60	OCR Scan	2SA1313 2SA1314 2SA1315 2SA1316 SA1317 SA1318 46K/23K 2SC3401 2SA1347 10K/10K 2SA1317 2SA1348 2SC3331 2sc3345 2SC3398 2SA1319	PDF
RTIP144C Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.	OCR Scan	2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C	PDF

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2SA1314 Search Results

2SA1314 Datasheets (19)

2SA1314 Datasheets Context Search

Untitled

smd transistor 2A

2SA1314

Untitled

Untitled

2SA1314

2SA1314

2SA1314

D marking amplifier

2SA1314

2SC4793 2sa1837

alternator diode 1776 B

Untitled

2SA1314

Untitled

2SA1314

2SA1314

2SA1314

Untitled

2N3904 331 transistor

2SB1547

2SC3301

2SA1317

RTIP144C