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    2SC4781 Search Results

    2SC4781 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4781 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SC4781 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4781 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4781 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4781 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4781 Toshiba Silicon NPN transistor for strobo flash applications and medium power amplifier applications Scan PDF
    2SC4781 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYEP(PCT PROCESS) Scan PDF

    2SC4781 Datasheets Context Search

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    2SC4781

    Abstract: C4781
    Text: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4781 2SC4781 C4781

    2SC4781

    Abstract: C4781
    Text: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4781 2SC4781 C4781

    Untitled

    Abstract: No abstract text available
    Text: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4781

    Untitled

    Abstract: No abstract text available
    Text: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4781

    2SC4781

    Abstract: C4781
    Text: 2SC4781 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4781 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高くリニアリティが良好です。 : hFE (1) = 200~600 (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SC4781 C4781 20070701-JA 2SC4781 C4781

    Untitled

    Abstract: No abstract text available
    Text: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4781

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		PDF 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    2SC4781

    Abstract: Toshiba NOR FLASH
    Text: 2SC4781 TO SH IBA TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4781 Unit in mm 5.1 MAX. MEDIUM POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hEE Linearity : hEE (i) = 200~600 (VCE = 2V, Ic = 1A)


    OCR Scan     		PDF 2SC4781 2SC4781 Toshiba NOR FLASH

    Untitled

    Abstract: No abstract text available
    Text: 2SC4781 SILICON NPN EPITAXIAL TYPE PCT PROCESS TENTATIVE DATA Unit in mm STROBE FLASH APPLICATIONS. mfoium power amplifier applications. FEATURES • Excellent hpE Linearity : h F E ( l ) = 2 0 0 ~ 6 0 0 (VCE=2V, I c = l A ) : h F EC2)=300 (Typ.) (VCH=2V, Ic=4A)


    OCR Scan     		PDF 2SC4781 80MAX

    2SC4781

    Abstract: No abstract text available
    Text: 2SC4781 TO SH IBA TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4781 MEDIUM POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hjpE Linearity : hjpE (i) = 200~600 (VCe = 2V, Ic = 1A) : hFE(2) = 300 (Typ.) (VCE = 2V, I c = 4A)


    OCR Scan     		PDF 2SC4781 2SC4781

    2SC4781

    Abstract: No abstract text available
    Text: TO SHIBA 2SC4781 2SC4781 TO SHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 M AX. M E D IU M POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hEE Linearity : hEE (i) = 200~600 (VCE = 2V, Ic = lA)


    OCR Scan     		PDF 2SC4781 2SC4781

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC4781 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4781 STOROBO FLASH APPLICATIONS U nit in mm 5.1 MAX. M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC C urrent Gain and Excellent h p g Linearity : hFE(1) = 200-600 (VCE = 2V, IC = 1A)


    OCR Scan     		PDF 2SC4781 75MAX.

    Untitled

    Abstract: No abstract text available
    Text: 2SC4781 TOSHIBA 2SC4781 TOSHIBA TRANSISTOR 5TOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX. MEDIUM POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hpg Linearity : hF E (i) = 200-600 (VCE = 2V, Ic = lA)


    OCR Scan     		PDF 2SC4781 75MAX.

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266