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    2SA1416 Search Results

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    2SA1416 Price and Stock

    onsemi 2SA1416S-TD-E

    TRANS PNP 100V 1A PCP
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    DigiKey 2SA1416S-TD-E Cut Tape 1,725 1
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    New Advantage Corporation 2SA1416S-TD-E 6,000 1
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    onsemi 2SA1416T-TD-E

    TRANS PNP 100V 1A PCP
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    DigiKey 2SA1416T-TD-E Reel 950 1,000
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    2SA1416T-TD-E Cut Tape 799 1
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    Rochester Electronics 2SA1416T-TD-E 990 1
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    2SA1416 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1416 Kexin High-Voltage Switching Applications Original PDF
    2SA1416 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistors High-Volt Original PDF
    2SA1416 Sanyo Semiconductor High-voltage switching Original PDF
    2SA1416 TY Semiconductor High-Voltage Switching Applications - SOT-89 Original PDF
    2SA1416 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1416 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1416 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1416 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1416 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1416 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SA1416 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SA1416 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SA1416R Sanyo Semiconductor High-Voltage Switching Applications Original PDF
    2SA1416R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1416S Sanyo Semiconductor High-Voltage Switching Applications Original PDF
    2SA1416S Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1416S-TD-E On Semiconductor 2SA1416 - High Voltage PNP Switching Transistor, hFE = 140 - 280 Original PDF
    2SA1416T Sanyo Semiconductor High-Voltage Switching Applications Original PDF
    2SA1416T Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1416T-TD-E On Semiconductor 2SA1416 - High Voltage PNP Switching Transistor, hFE = 200 - 400 Original PDF

    2SA1416 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


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    PDF 2SA1416 2SC3646 EN2005B 2SA1416

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor http://onsemi.com – 100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s


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    PDF EN2005C 2SA1416/2SC3646 2SA1416 250mm2

    2SC3646

    Abstract: 2SA1416 ITR03526 ITR03527
    Text: Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity.


    Original
    PDF ENN2005A 2SA1416/2SC3646 2SA1416/2SC3646] 25max 2SA1416 2SC3646 2SA1416 ITR03526 ITR03527

    Untitled

    Abstract: No abstract text available
    Text: 2SA1416 / 2SC3646 Ordering number : EN2005C SANYO Semiconductors DATA SHEET 2SA1416/2SC3646 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


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    PDF 2SA1416 2SC3646 EN2005C 2SA1416/2SC3646 2SA1416

    SMD BR 08

    Abstract: 2SA1416
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1416 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


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    PDF 2SA1416 -400mA -40mA -100mA SMD BR 08 2SA1416

    2SA1416

    Abstract: 2SC3646 ITR03526
    Text: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    PDF 2SA1416 2SC3646 EN2005B 2SA1416 2SC3646 ITR03526

    2SA1416

    Abstract: 2SC3646
    Text: 2SA1416 / 2SC3646 注文コード No. N 2 0 0 5 B 三洋半導体データシート 半導体ニューズ No.N2005A をさしかえてください。 2SA1416 / 2SC3646 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用


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    PDF 2SA1416 2SC3646 N2005A 2SA1416 250mm2 100mA 2SC3646

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1416 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage


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    PDF 2SA1416 -100mA

    2SC3646

    Abstract: 2SA1416
    Text: Ordering number:EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time.


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    PDF EN2005A 2SA1416/2SC3646 2SA1416/2SC3646] 2SA1416 2SC3646 2SA1416

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    2SA850

    Abstract: 2N2216 2N5400 MOTOROLA 2N3064 2SB646A 25M SOT89 motorola bc450 15J1A LOW-POWER SILICON PNP KT214A
    Text: LOW-POWER SILICON PNP Item Number Part Number 5 10 -15 20 >= NthAmerSemi NthAmerSemi See Index SGS-Ates Hybrid Semi SGS-Ates Semelab Semelab See Index ~~~~~~ Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Semicoa NthAmerSemi Space Power


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    PDF BCY96 BCY97 BC477 BC477VI HSE174 BC477A BC477B 2N3798A TP3798A 2SA850 2N2216 2N5400 MOTOROLA 2N3064 2SB646A 25M SOT89 motorola bc450 15J1A LOW-POWER SILICON PNP KT214A

    D2493

    Abstract: 2097B 2SA1416 2SC3646 FP205 ITR10922 ITR10923
    Text: 注文コード No. N 4 4 9 4 FP205 No. N4494 81000 FP205 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ プッシュプル回路用 ・PNP トランジスタ , NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が


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    PDF FP205 N4494 FP205 2SA1416 2SC3646 250mm2 100mA D2493 2097B 2SA1416 2SC3646 ITR10922 ITR10923

    Untitled

    Abstract: No abstract text available
    Text: ^O rd e rin g number . EN 2 0 0 5 A 2SA1416/2SC3646 NO.2005A PN P/N PN Epitaxial Planar Silicon Transistors SAiYO i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.


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    PDF 2SA1416/2SC3646 2SA1416 250miii 2I2SA1416/2SC3646

    2SA1416

    Abstract: 2SC3646
    Text: Ordering number:EN2005A 2SA1416/2SC3646 NO.2005A SA \YO PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications 1 Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.


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    PDF EN2005A 2SA1416/2SC3646 2SA1-416 2005-V4 2SA1416 2SC3646

    Untitled

    Abstract: No abstract text available
    Text: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density


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    PDF FP205 FP205 2SA1416 2SC3646,

    Untitled

    Abstract: No abstract text available
    Text: O rdering num ber: EN 4494 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransisto rs SA%YO Push-Pull Circuit Applications Features • Com posite type w ith a PN P tran sisto r and an N PN tran sisto r in one package, facilitating high-density m ounting.


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    PDF FP205 FP205 2SA1416 2SC3646, --10Ij --400mA 250mm2

    2SD1300

    Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
    Text: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.


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    PDF O-126 T0-220AB 2SA164830 2SC4734 2SA1749 2SC4564 min2000 min4000 2SD894 2SD1153 2SD1300 transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205

    C3467

    Abstract: SRE 210 B a1370 A1728 C4519 A1338 B1122 C3392 D1622 FP201
    Text: sa iHyo PCP4/5 series :FPseries l High performance composite type devices suitable for surface mounting which make the sets smallerandlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,


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    PDF FP202-FP207) FP212 A1370 C3467 MT990208TR C3467 SRE 210 B A1728 C4519 A1338 B1122 C3392 D1622 FP201

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    transistor b985

    Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
    Text: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.


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    PDF 250mm! 2SA1882/2SC4984 2SB1118/2SD1618 2SB1119/2SD1619 2SB1120 2SD1620 2SB1121/2SD1621 2SB1122/2SD1622 2SB1123/2SD1623 2SB1124/2SD1624 transistor b985 transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892

    2SA1301 TOSHIBA

    Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
    Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207


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    PDF 2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646

    2SB596

    Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
    Text: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T


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    PDF 2SB824 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB942A 2SB686 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a

    2SA1115

    Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
    Text: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225


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    PDF 2SA1225 2SA1178 2SB1226 2SB1024 2SB1342 2SB1227 2SB1024 2SB1430 2SA1115 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753