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    Aptiv PLC 35041241

    Automotive Connectors FEMALE DCK 2.8, 1.00-2.50MM2 TERM
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    TTI 35041241 Reel 20,000
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    Aptiv PLC 15491922

    Automotive Connectors DCS2 2,8MM FEM(1,00-2,50MM2)AG
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    TTI 15491922 Reel 16,000
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    Aptiv PLC 10864930

    Automotive Connectors 2.80 DCS-2 F >1-2.5MM2 TERM SN
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    TTI 10864930 Reel 16,000
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    Aptiv PLC 35041232

    Automotive Connectors ASM TERM F DCK 2.8 SN
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    TTI 35041232 Reel 25,000
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    Aptiv PLC 33501966

    Automotive Connectors SICMA2 2,8 (1,00-2,50MM2)M AU
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    TTI 33501966 Reel 9,000
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    33501966 Cardboard Strips 900
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    250MM2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking M P Absolute Maximum Ratings (Ta = 25°C)


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    MT3S150P SC-62 PDF

    Untitled

    Abstract: No abstract text available
    Text: STA3073F PNP Silicon Transistor Applications PIN Connection • Power amplifier application  High current switching application Features  :  : High collector breakdown voltage VCEO=-120V Low collector saturation voltage VCE sat =-0.5V(Max.) SOT-89


    Original
    STA3073F -120V OT-89 KSD-T5B032-000 PDF

    2sk3944

    Abstract: No abstract text available
    Text: 2SK3944 注文コード No. N 8 3 3 0 2SK3944 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    2SK3944 250mm2 IT07495 IT09799 IT09800 IT09794 2sk3944 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage


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    2SC3607 -j250 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


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    RN5001 RN5001) RN6001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE P OWE R A M P L I F I E R 2SC4539 APPLICATIONS P O WE R S W I T C H I N G A P P L I C A T I O N S Low Saturation Voltage : V C E s a t = 0 .5 V ( M a x .) (Ic =700mA) High Speed Switching Time: t stg=0.3ns Small Flat Package


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    2SC4539 700mA) 2SA1734 100mA 20/is PDF

    IC JRC circuits

    Abstract: No abstract text available
    Text: 2SC4705 No.3484 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications High hpg A p p licatio n s • Low-frequency general-purpose amp, drivers, m uting circuits Features • High DC current gain (hpE = 800 to 3200) • Low collector-to-emitter saturation voltage : Vce (sat)S 0.5V max


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    2SC4705 100mA, 100mA 7190MH IC JRC circuits PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package


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    2SA1735 -500mA) 2SC4540 -10mA, -100mA -700mA -500mA, -25mA PDF

    ic power 22E

    Abstract: power 22E IC 12E MARKING
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC


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    2SC3607 IS21e CL4-a05 ic power 22E power 22E IC 12E MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN5003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. P O W ER SW ITCH IN G APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


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    RN5003 RN6003 250mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density


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    FP205 FP205 2SA1416 2SC3646, PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage


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    2SK1724 10//S, 250mm2X 31893TH A8-7831 PDF

    2097a

    Abstract: No abstract text available
    Text: O rdering number :E N 4 5 3 6 SA\YO j No.4536 ¡j_ _ FP209 NPN Epitaxial Planar Silicon Transistor Driver Applications F eatu res • Composite type with 2 transistors NPN contained in one package,facilitating


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    FP209 FP209 2SD1621 250mm2X0 250mm2X 53094TH BX-0215 20lBl 20lB2= 2097a PDF

    AX8896

    Abstract: No abstract text available
    Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage


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    2SJ287 250mm2X 250mA ----10V 32593TH AX-8896 AX8896 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process


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    RN5002 RN6002 --10V, PDF

    EN4539

    Abstract: SB0703C
    Text: I Ordering number:EN4539 _ FP301 TR : NPN Epitaxial Planar Silicon Transistor No.4539 SMÊYO SBD : Schottky B arrier Diode i DC/DC Converter Applications F eatures • Composite type with 2 devices NPN transistor and Schottky barrier diode contained in one package,


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    EN4539 FP301 2SD1621 SB07-03C 250mm2X EN4539 SB0703C PDF

    2088a

    Abstract: No abstract text available
    Text: Ordering number : EN 3 9 6 1 A N 0 .3 9 6 1 A II_ FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky B arrier Diode SAiYO DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,


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    FP102 FP102 2SB1396 SB07-03C, 700mA 100mA 250mm2X0 20Ib2 2088a PDF

    2sb1302

    Abstract: No abstract text available
    Text: Ordering number: E N 2 5 5 5 A 2SB1302 N0.2555A SA\YO PNP E pitaxial P lanar Silicon T ransistor High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low collector to emitter saturation voltage


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    2SB1302 250mm2 D268M0/4097TA 2SB1302 -10FA PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)


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    2SC2873 2SA1213 4-Q05 50BASE-- PDF

    MARKING dk

    Abstract: 2sd1628
    Text: ^ O r d e r in g num ber : EN 1 7 8 1 A 2SD1628 SA\YO NPN Epitaxial Planar Silicon Transistor i High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.


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    2SD1628 250mm 10lB2 5277KI/3045MW 250mm2* MARKING dk 2sd1628 PDF

    Untitled

    Abstract: No abstract text available
    Text: O rdering num ber: EN 4494 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransisto rs SA%YO Push-Pull Circuit Applications Features • Com posite type w ith a PN P tran sisto r and an N PN tran sisto r in one package, facilitating high-density m ounting.


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    FP205 FP205 2SA1416 2SC3646, --10Ij --400mA 250mm2 PDF

    Transistor B C 458

    Abstract: c458 2sa1766
    Text: O rd e rin g n u m b e r: EN 3182B N 0.3182B 2SA1766 P N P Epitaxial P lan ar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications F e a tu r e s . A doptionofFB E T , MBIT processes . H igh DC cu rren t gain hpE = 500 to 1200 . Large cu rren t capacity


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    3182B 250mm2 2SA1766 1200MO/6279MO Transistor B C 458 c458 2sa1766 PDF

    8897

    Abstract: No abstract text available
    Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage


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    2SJ288 10//S, 250mm2X VQD--30V 250mA, --500mA, 31893TH AX-8897 8897 PDF

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter


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    2SB1325/2SD1999 2SB1325 250mm2x 150mA 7149MO PDF