Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB596 Search Results

    2SB596 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB596 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SB596 Mospec PNP Silicon Power Transistor Scan PDF
    2SB596 Mospec POWER TRANSISTORS(4.0A,80V,30W) Scan PDF
    2SB596 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB596 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB596 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB596 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB596 Unknown Transistor Replacements Scan PDF
    2SB596 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB596 Unknown Cross Reference Datasheet Scan PDF
    2SB596 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB596 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB596 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB596 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB596 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB596 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB596 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB596 Unknown Scan PDF
    2SB596 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB596 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SB596 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB596

    Abstract: 2SD526 2SD52
    Text: JMnic Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SB596 O-220C 2SD526 2SB596 2SD526 2SD52

    2SB596

    Abstract: pnp hfe 120-240 2SD526
    Text: SavantIC Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD526 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SB596 O-220C 2SD526 2SB596 pnp hfe 120-240 2SD526

    2sb596

    Abstract: 2SD526 ic audio amplifier 2*5w
    Text: Inchange Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity


    Original     		PDF 2SB596 O-220C 2SD526 2sb596 2SD526 ic audio amplifier 2*5w

    2SD526

    Abstract: 2SB596
    Text: Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB596 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity


    Original     		PDF 2SD526 O-220C 2SB596 2SD526 2SB596

    2SD526

    Abstract: 2SB596
    Text: SavantIC Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB596 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SD526 O-220C 2SB596 2SD526 2SB596

    2SB596

    Abstract: Transistor 2sb596 2SD526 ic audio amplifier 2*5w transistor 2SD526
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB596 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Complement to Type 2SD526 APPLICATIONS


    Original     		PDF 2SB596 2SD526 2SB596 Transistor 2sb596 2SD526 ic audio amplifier 2*5w transistor 2SD526

    2SB596

    Abstract: 2SD526
    Text: 2SB596 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD526 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SB596 O-220 2SD526 2SB596 2SD526

    transistor 2SD526

    Abstract: 25u20 2SB596 2SD526 2sd52
    Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS .designed for use in power amplifier application FEATURES: * Low Collector-Emitter Saturation Voltage V CE s a tf 1 OV(Max @ Ic=3.0A,Ib=0.3A * DC Current Gain hFE= 40-240@lc= 0.5A * Complementary to PNP 2SB596


    OCR Scan     		PDF 2SB596 2SD526 2SD526 eWB-10 PKr150 transistor 2SD526 25u20 2SB596 2sd52

    2SA1015

    Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
    Text: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^


    OCR Scan     		PDF SA1015 2SA385 2SA715 2SB941 2SB1064 2SA1015 2SA673 2SA1015 2SA1358 2SA965 2SB1212 2SB560 2SA934 2SA985 NEC 2SA1096

    Untitled

    Abstract: No abstract text available
    Text: V IJ a > P N P = m m 2SB596 •¥-fö : mm 0 3 .6 + 0 .2 3 Wÿ v>0 coÊ MU &Ä • hpE • 2SD526 t : P c = 30W T c = 25°C V' o 7' ') * 'y 9 ') (; &■ <0 i t o 3 > 20~ 25 W ^ ' f 7 7 /í í - f ' í t T > (Ta = 25°C) m g a2 ■§• ÎË i& M f£ VCBO


    OCR Scan     		PDF

    2SB596

    Abstract: 2SD526 AC75 20-25W
    Text: TOSHIBA 2SD526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm PO W ER AM PLIFIER APPLICATIONS 43.6 + 0.2 • • • • High Power Dissipation : P0 = 3OW Te = 25°C Good Linearity of hjrg. Complementary to 2SB596. Recommend for 20~25W High Fidelity Audio Frequency


    OCR Scan     		PDF 2SD526 2SB596. 961001EAA2' 2SB596 2SD526 AC75 20-25W

    transistor D526

    Abstract: D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER
    Text: TOSHIBA 2SD526 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2S D526 High Power Dissipation : Pq = 30W T c = 25°C Good Linearity of hpE. Complementary to 2SB596. Recommend for 2Q~25W High Fidelity Audio Frequency


    OCR Scan     		PDF 2SD526 2SB596. O-220AB 50x50x2mm 50X50Xlmm 961001EAA2' transistor D526 D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER

    2SD526

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in POWER AMPLIFIER APPLICATIONS. 03. 6± O .2 FEATURES : • High Power Dissipation : P C=30W Tc=25°C • Good Lineality of h p E . • Complementary to 2SB596. • Recommended for 20 'v 25W High Fidelity Audio


    OCR Scan     		PDF 2SD526 2SB596. 2SD526

    2SB596

    Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
    Text: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T


    OCR Scan     		PDF 2SB824 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB942A 2SB686 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a

    2SA934

    Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
    Text: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54


    OCR Scan     		PDF 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA1782 2SA1015 2SA953 2SA836 2SA934 2SA970 2sa933 2sa952 2sB1064 2SA720 2SA836

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


    OCR Scan     		PDF 2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001

    2SD526

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm POWER AMPLIFIER APPLICATIONS. J2Í3.6±0.2 FEATURES : • High Power Dissipation : PC=30W Tc=25°C • Good Linearity of hpg. • Complementary to 2SB596. • Recommended for 20 ^ 25W High Fidelity Audio


    OCR Scan     		PDF 2SD526 2SB596. 2SD526

    Untitled

    Abstract: No abstract text available
    Text: 2SB596 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpj;. ■ Complementary to 2SD526. • Recommended for 20 ^ 25W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		PDF 2SB596 2SD526.

    2SB596

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)


    OCR Scan     		PDF 2SB596 2SD526. 100x100x2m 100X100X 2SB596

    Nec K 872

    Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
    Text: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634


    OCR Scan     		PDF 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB920 2SB595 2SB703A 2SB942A 2SA1634 Nec K 872 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601

    Untitled

    Abstract: No abstract text available
    Text: 2SD526 TOSHIBA 2SD526 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 10.3MAX. • • • • • High Power Dissipation : P q = 30W Tc = 25°C Good Linearity of hpg. Complementary to 2SB596. Recommend for 20~25W High Fidelity Audio Frequency


    OCR Scan     		PDF 2SD526 2SB596. 961001EAA2'

    transistor 2SD526

    Abstract: 2sd526 2SB596 AC75
    Text: TO SH IBA 2SD526 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm ¿3.6 ±0.2 1 0 .3 M A X . • • • • W r- High Power Dissipation : P0 = 3OW (Te = 25°C Good Linearity of hjpg. Complementary to 2SB596.


    OCR Scan     		PDF 2SD526 2SB596. transistor 2SD526 2sd526 2SB596 AC75

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N