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    Toshiba America Electronic Components 2SA1315-Y,HOF(M

    TRANS PNP 80V 2A TO92MOD
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    Toshiba America Electronic Components 2SA1315-Y,T6ASNF(J

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    Toshiba America Electronic Components 2SA1315

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    2SA1315 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1315 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1315 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1315 Unknown Cross Reference Datasheet Scan PDF
    2SA1315 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1315 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1315 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1315 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1315 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1315 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
    2SA1315 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1315 Toshiba TO-92MOD Audio / TV Transistors Scan PDF
    2SA1315-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1315O Toshiba Silicon PNP Epitaxial Planar Power Transistor Scan PDF
    2SA1315-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1315Y Toshiba Silicon PNP Epitaxial Planar Power Transistor Scan PDF
    2SA1315-Y,HOF(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 80V TO226-3 Original PDF
    2SA1315-Y,T6ASNF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 80V TO226-3 Original PDF

    2SA1315 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA1315

    Abstract: 2SC3328 A1315
    Text: 2SA1315 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1315 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		2SA1315 2SC3328 O-92MOD 2SA1315 2SC3328 A1315 PDF

    Transistor A1315

    Abstract: A1315 transistor 2Sa1315 A1315 2SC3328
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 A1315 transistor 2Sa1315 A1315 2SC3328 PDF

    Transistor A1315

    Abstract: 2SA1315 A1315 transistor 2SC3328 A1315
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 2SA1315 A1315 transistor 2SC3328 A1315 PDF

    2SA1315

    Abstract: 2SC3328 A1315 2sa1315 y
    Text: 2SA1315 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1315 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		2SA1315 2SC3328 O-92MOD 20070701-JA 2SA1315 2SC3328 A1315 2sa1315 y PDF

    Transistor A1315

    Abstract: A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328 PDF

    Transistor A1315

    Abstract: 2sa1315
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		2SA1315 2SC3328 O-92MOD Transistor A1315 2sa1315 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    c3328

    Abstract: C3328 NPN Transistor 2SC3328 2SA1315
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •


    Original     		2SC3328 2SA1315 c3328 C3328 NPN Transistor 2SC3328 2SA1315 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    c3328

    Abstract: 2SC3328 2SA1315
    Text: 2SC3328 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3328 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		2SC3328 2SA1315 O-92MOD 20070701-JA c3328 2SC3328 2SA1315 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent PDF

    2SA1315

    Abstract: 2SC3328 A131 C2804 TRANSISTOR 2sa1315
    Text: 2SA1315 TO SH IBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A)


    OCR Scan     		2SA1315 2SC3328 2SA1315 2SC3328 A131 C2804 TRANSISTOR 2sa1315 PDF

    2SA1315

    Abstract: 2SC3328 A131 TT31
    Text: 2SA1315 TOSHIBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (1^= -1A )


    OCR Scan     		2SA1315 2SC3328 961001EAA2 2SA1315 A131 TT31 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ic = lA) High Speed Switching Time : tstg = 1 0 / j s (Typ.) Complementary to 2SA1315


    OCR Scan     		2SA1315 2SC3328 PDF

    C2804

    Abstract: Transistor A131 2SA1315 2SC3328 A131 TT31
    Text: 2SA1315 TO SH IBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 3 1 5 Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 5.1 MAX. • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A) • High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SA1315 2SC3328 O-92MOD C2804 Transistor A131 2SA1315 2SC3328 A131 TT31 PDF

    SA1315

    Abstract: 2SA1315 2SC3328 A131
    Text: TOSHIBA 2SA1315 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 315 IN D USTRIA L APPLICATIONS U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : v C E (sa t)= - 0 .5 V (Max.) ( I c = - 1 A )


    OCR Scan     		2SA1315 2SC3328 SA1315 SA1315 2SA1315 2SC3328 A131 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1315 2 S A 1 315 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = -1 A )


    OCR Scan     		2SA1315 2SC3328 PDF

    2SA1315

    Abstract: No abstract text available
    Text: 2SA1315 TOSHIBA TOSHIBA TRANSISTOR K SILICON PNP EPITAXIAL TYPE PCT PROCESS mm Am m 1 3 1 5 • v ■ v INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : V m ?r*^ = - 0.5V (Max. Win = - l A )


    OCR Scan     		2SA1315 2SC3328 2SA1315 PDF

    2Sj72

    Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
    Text: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *


    OCR Scan     		2SA1160 2SC2500 2SA1160 2SC1627A 2SC2235 2SA817A 2SA965 2SK147 2SJ72 2Sj72 transistor 2SC2655 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF

    2SA1598

    Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
    Text: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft


    OCR Scan     		2SA1483 2SA1622 2SA1586 2SA1611 2SB1218A 2SA1603 2SA1745 2SA1588 2SA1608 2SA1532 2SA1598 2sa1612 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l PDF

    2SA1317

    Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
    Text: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60


    OCR Scan     		2SA1313 2SA1314 2SA1315 2SA1316 SA1317 SA1318 46K/23K 2SC3401 2SA1347 10K/10K 2SA1317 2SA1348 2SC3331 2sc3345 2SC3398 2SA1319 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF