Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM • VDSS = 60V , ID = 115mA, RDS ON = 7.51 • • • • • Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available
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2N7002CSM
115mA,
OT-23
115mA
800mA
350mW
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2N7002CSM
Abstract: No abstract text available
Text: 2N7002CSM MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 FEATURES 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1 1.91 ± 0.10 (0.075 ± 0.004) • V(BR)DSS = 60V
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2N7002CSM
2N7002CSM
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Untitled
Abstract: No abstract text available
Text: 2N7002CSM MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 FEATURES 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1 1.91 ± 0.10 (0.075 ± 0.004) • V(BR)DSS = 60V
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2N7002CSM
2N7002"
2N7002CSM
2N7002CSM-JQR-B
2N7002DCSM
2N7002DCSM-JQR-B
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM • VDSS = 60V , ID = 115mA, RDS ON = 7.5Ω • • • • • Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available
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Original
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PDF
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2N7002CSM
115mA,
OT-23
115mA
800mA
350mW
|
Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM • VDSS = 60V , ID = 115mA, RDS ON = 7.5Ω • • • • • Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available
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Original
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PDF
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2N7002CSM
115mA,
OT-23
115mA
800mA
350mW
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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bav90
Abstract: 1N400* series LCC4 MOSFETS 2N4033CSM4 2N2222ACSM LCC3 transistors 2N3904CSM 2N3867S BAT54CSM
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C E R A M I C LCC1 S U R FAC E LCC3 LCC2 M O U N T LCC4 SMD1 SMD05 Small Signal Power Transistors, MOSFETs, Diodes Transistors, MOSFETs, Diodes, Voltage Regulators LCC1 LCC2
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SMD05
2N918CSM
2N930CSM
2N2222ACSM
2N2369ACSM
2N2484CSM
2N2605ACSM
2N2894ACSM
2N2904ACSM
2N2907ACSM
bav90
1N400* series
LCC4
MOSFETS
2N4033CSM4
LCC3 transistors
2N3904CSM
2N3867S
BAT54CSM
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IRF5402
Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M
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OCR Scan
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PDF
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BZX55C5V6CSM
T0220SM
2N2222CSM
2N2907CSM
BCW33CSM
BZX55C7V5CSM
2N2369ACSM
2N3209CSM
3250C
BCY59CSM
IRF5402
IRFN540
IRFN630
IRFN530
IRFN640
8YV32-5
W06C
2205-M
IRFN733
IRFn342
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