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    2N6755 Price and Stock

    Keysight Technologies N6755A

    Modular Power Supplies High-Performance Autoranging DC Power Module 20V, 50A, 500W, double-wide
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    Mouser Electronics N6755A 2
    • 1 $4202.31
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    • 100 $4202.31
    • 1000 $4202.31
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    Vishay Siliconix 2N6755

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    Bristol Electronics 2N6755 100
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    2N6755 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6755 Fairchild Semiconductor N-Channel Power MOSFETs, 14 A, 60 A/100 V Scan PDF
    2N6755 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. Scan PDF
    2N6755 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6755 IXYS High Voltage Power MOSFETs Scan PDF
    2N6755 IXYS High Voltage Power MOSFETs Scan PDF
    2N6755 Motorola European Master Selection Guide 1986 Scan PDF
    2N6755 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6755 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6755 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6755 Unknown FET Data Book Scan PDF
    2N6755 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6755 National Semiconductor N-Channel Power MOSFETs Scan PDF
    2N6755 Semelab MOS Transistors Scan PDF
    2N6755 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

    2N6755 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N6756

    Abstract: 2N6755 F102 ISQ0020F
    Text: DE I 3 4 t.Ttz.V4 DD2771G Q ~ f A4 3469674 FAIRCHILD SEMICONDUCTOR 84 D 2 7790 2N6755/2N6756 T - 3 ? - / / N-Channel Power MOSFETs, 14 A, 60 V/100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AA These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF 34hcib7M 2N6755/2N6756 2N67S6 2N6755 clb74 E77T4 T-39-11 2N6756 F102 ISQ0020F

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    jfet selector guide

    Abstract: T0-220SM
    Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763


    OCR Scan     		PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM

    1N6801

    Abstract: 2N6767 2n6800 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761
    Text: - 248 - f ft * t Vds or M € tt € i Vdg V 2N6755 IR N 60 2N6756 N 100 IR 2N6757 IR N 150 2N6758 N 200 IR 2N6759 IR N 350 2N6Ï6Û N 400 IR 2N6761 N 450 IR 2N6762 N 500 IR 2K6763 IR N 60 2N6764 IR N 100 2N6765 IR N 150 2N6766 IR N 200 2N6767 IR N 350 2N6768


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-205AF 2N6798 1N6801 2N6767 2n6800 2N6759 2N676 2N6761

    T0220H

    Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
    Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758


    OCR Scan     		PDF 2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H 2N6795 T018 T046

    2N6155

    Abstract: 2n6156 2N6755 2N6756 dioda
    Text: 3875081 G E^SOLID S TATE 01 DE 1 3 0 7 5 0 0 1 0010304 T | D ' T-39-11 Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors * N-Channel Enhancement-Mode


    OCR Scan     		PDF 3fi750fll t-39- 2N6755, 2N6756 0V-100V 2N6755 2N6756 3fi75Clfll 2N6155 2n6156 dioda

    2N6155

    Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
    Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited


    OCR Scan     		PDF 2N6755, 2N6756 0V-100V 2N6755 2N6756 2N6796 O-2I35AF O-205AF 2N6800 2N6155 2n6156 qpl-19500 2N6901 D-05N md-141 2N67 2N6756 JANTX

    Untitled

    Abstract: No abstract text available
    Text: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)


    OCR Scan     		PDF hSD113D T-39-01

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    2N7003

    Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
    Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759

    2N6155

    Abstract: 2N67 2N6756 2N6156 D-05N md-141 2N6755
    Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 60V -100V rDs on = 0.18 fi and 0.25 fl Features: • SO A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		PDF 2N6755, 2N6756 0V-100V 2N6755 2N6756 150cC 2N6155 2N67 2N6156 D-05N md-141

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    MTM20N08

    Abstract: MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 MTM10N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


    OCR Scan     		PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150

    2N6756 JAN

    Abstract: 2N6755
    Text: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


    OCR Scan     		PDF 2N6756 MIL-S-19500/542A contro17) 2N6755 2N6756 JAN

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 4302571 ' h a 0053714 S31 • HAS f r f r i s 2 N 6 7 5 5 2 N 6 7 5 6 N -C h a n n e l E n h an cem en t-M o d e Pow er F ie ld -E ffe c t Transistors August 1991 Package Features T O -2 0 4 A A • 12A and 14A, 6 0 V - 100V BO TTO M VIEW • rDS on = 0 .1 8 fl and 0 .2 5 fl


    OCR Scan     		PDF 2N6755 2N6756

    MTM20N08

    Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


    OCR Scan     		PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTP2P45 MTM35N05 IRF123 IRF150 MTM12N08 MTM12P08 MTM25N08 MTM55N08

    2N6756

    Abstract: 2N6755
    Text: UNITRODE CORP TS 9347963 UNITRODE CORP '' P O W E R M O S F E Î DE § ^ 3 4 7 ^ 3 920 T R A N S I S T O R S 10492 00104^2 0 T , JTX, JTXV ¡ ¡ ¡ g * 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power M OSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF IL-S-19500/542A 2N6756 2N6755

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    2n6152

    Abstract: 2N5159 2N5184 2N6164 2N6755 2N6756 2N6757 2N6758 2N6759 2N676
    Text: - 248 M - € tt f f t t Vd s or € i * £ Vg s ÍS T a= 2 5 '0 * /CH Vd g a s. 1 GSS Pd Id Vg s t h 1 DSS max * /CH ft % 4# fe (13=25*0 I d (o n ) Vd s = Vg s C iss Coss C rss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) ft & m n Vg s =0 (max)


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 2N5159 2N5184 2N6164 2N6759 2N676

    MTP3055A

    Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


    OCR Scan     		PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTP3055A MTM12N06 mtp25n06 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11