2N6758
Abstract: 2n677 2N67 2N6756 2N6757 30saa zn675
Text: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited
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2N6757,
2N6758
50V-200V
2N6757
2N6758
ZN6758
2n677
2N67
2N6756
30saa
zn675
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2N6756
Abstract: 2N6755 F102 ISQ0020F
Text: DE I 3 4 t.Ttz.V4 DD2771G Q ~ f A4 3469674 FAIRCHILD SEMICONDUCTOR 84 D 2 7790 2N6755/2N6756 T - 3 ? - / / N-Channel Power MOSFETs, 14 A, 60 V/100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AA These devices are n-channel, enhancement mode, power
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34hcib7M
2N6755/2N6756
2N67S6
2N6755
clb74
E77T4
T-39-11
2N6756
F102
ISQ0020F
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2N6756 JAN
Abstract: 2N6755
Text: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.
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2N6756
MIL-S-19500/542A
contro17)
2N6755
2N6756 JAN
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Untitled
Abstract: No abstract text available
Text: 4302571 ' h a 0053714 S31 • HAS f r f r i s 2 N 6 7 5 5 2 N 6 7 5 6 N -C h a n n e l E n h an cem en t-M o d e Pow er F ie ld -E ffe c t Transistors August 1991 Package Features T O -2 0 4 A A • 12A and 14A, 6 0 V - 100V BO TTO M VIEW • rDS on = 0 .1 8 fl and 0 .2 5 fl
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2N6755
2N6756
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1SV50
Abstract: 2N6151 2N67 2N6757 2N6758
Text: 3875081 G E SOL ID STATE 01 î î f | 3a?SG fll 001ö3öfl b ¥_ 1 T-39-11 Standard Power MÔSFËTs 2N6757, 2N6758 F ile N u m b e r 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CH A NN E L EN HA N C E M E N T MODE
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T-39-11
2N6757,
2N6758
2N6757
2N6758
2N6751
50UACET0
T-39-11
1SV50
2N6151
2N67
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2N6155
Abstract: 2n6156 2N6755 2N6756 dioda
Text: 3875081 G E^SOLID S TATE 01 DE 1 3 0 7 5 0 0 1 0010304 T | D ' T-39-11 Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors * N-Channel Enhancement-Mode
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3fi750fll
t-39-
2N6755,
2N6756
0V-100V
2N6755
2N6756
3fi75Clfll
2N6155
2n6156
dioda
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2N6155
Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited
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2N6755,
2N6756
0V-100V
2N6755
2N6756
2N6796
O-2I35AF
O-205AF
2N6800
2N6155
2n6156
qpl-19500
2N6901
D-05N
md-141
2N67
2N6756 JANTX
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2N6758
Abstract: 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6757 2N6758 JANTX
Text: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited
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2N6757,
2N6758
50V-200V
2N6757
2N6758
2N6796
O-2I35AF
O-205AF
2N6800
2N677
2N6766 JANTX
mosfet 2n6788
qpl-19500
2N67
2N6756
2N6758 JANTX
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2N6756
Abstract: No abstract text available
Text: MOTOROLA SC 14E D I b3b?aSM Q D Öl bic c. 1 " _r - 3 7W y XSTRS/R F MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA 2N6756 14 AMPERE N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FET These TM O S Power FETs are designed for low voltage, high
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2N6756
2N6756
19500/542A
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