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    Microchip Technology Inc 2N5468

    POWER BJT
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    2N5468 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5468 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=400 / Ic=3 / Hfe=15/60 / fT(Hz)=2.5M / Pwr(W)=40 Original PDF
    2N5468 API Electronics Short form transistor data Short Form PDF
    2N5468 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N5468 Diode Transistor Transistor Short Form Data - TO-3 Scan PDF
    2N5468 General Transistor NPN Power Transistors Scan PDF
    2N5468 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5468 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5468 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5468 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5468 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5468 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5468 National Semiconductor RF, VHF, UHF Amplifiers Scan PDF
    2N5468 New England Semiconductor NPN TO-66 Transistor Scan PDF
    2N5468 PPC Products Transistor Short Form Data Scan PDF
    2N5468 Semico NPN Silicon Power Transistor Selection Guide Scan PDF
    2N5468 Semiconductor Technology High Voltage Silicon Medium Power Transistors Scan PDF
    2N5468 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N5468 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N5468 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5468 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5468 O213AA) 30-Jul-02

    2N5468

    Abstract: No abstract text available
    Text: 2N5468 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5468 O213AA) 1-Aug-02 2N5468

    2N5468

    Abstract: 2N5469
    Text: SavantIC Semiconductor Product Specification 2N5468 2N5469 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High-voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·They are intended for use in off-line power


    Original     		PDF 2N5468 2N5469 2N5468 2N5469

    2N5468

    Abstract: 2N5469
    Text: Inchange Semiconductor Product Specification 2N5468 2N5469 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High-voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·They are intended for use in off-line power


    Original     		PDF 2N5468 2N5469 2N5468 2N5469

    SDT423

    Abstract: SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418
    Text: Device Type 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3675 2N3676 2N3878 2N3902 2N5157 SDT402 SDT403 SDT409 SDT410 SDT411 SDT423 SDT424 SDT425 2N4231 2N4232 2N4233 2N5074 2N5075 2N5076 2N5077 2N5466 2N5467 2N5468 2N5469 2N5664


    Original     		PDF 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 SDT423 SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418

    Untitled

    Abstract: No abstract text available
    Text: 2N5468 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5468

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    Untitled

    Abstract: No abstract text available
    Text: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069


    OCR Scan     		PDF 2N5468 2N5469 2N2811 2N2812 2N2813 2N6495 2N4231 2N4232A 2N4233 2N4233A

    Untitled

    Abstract: No abstract text available
    Text: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)


    OCR Scan     		PDF 83mra) 203mm) JAN2N3902, JAN2N5157, SDT401, SDT430, 2N5466, 2N5468

    SDT423

    Abstract: No abstract text available
    Text: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A


    OCR Scan     		PDF 00D57SA 2N2150 2N2151 2N3788 2N3917 2N3918 O-111 2N3025 2N3026 SDT423

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


    OCR Scan     		PDF flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388

    2N3583

    Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430
    Text: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D | 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561


    OCR Scan     		PDF INC77 0GDG132 2N5427 2N5428 2N5429 30-12atts 2N5838 2N5839 2N5840 2N3902 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430

    JAN2N5157

    Abstract: 2N54
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC lF|ä3bflbDS 95D 02851 OOOHfiSl b D |~ T - 3 3 ~ n -JtoUtran ra O M C T ÄTTÄIL ^ Devices, Inc. V E R Y HIGH VOLTAGE, FAST SW ITCHING NPN TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 42 CHIP N U M BER ¿1


    OCR Scan     		PDF

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


    OCR Scan     		PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    15j03

    Abstract: 40328 npn darlington 400v 15a pnp 400v 10a 2N4296 BU326S 2N3583 2N3584 2N4297 2N4298
    Text: K CO INC ¿ A4D D g 2 Û 4 A 3 S E Od U i Q D j g ~j K A Ñ ¿ I S T f t R TKir*. ,S 4 D 00 13* 0DD013E B D T .2 V Q C Ì DIODE TRál\l5J5TQR CO. INC. 201 686-0400 • Telex; 139-385 • Outside NY & NJ area call TO LL FR E E 800-526-4561 FAX No. 201-575-5863


    OCR Scan     		PDF 0DD013E 2N5427 2N5428 2N5429 2N5430 2N5839 2N5840 2N3902 2N6542 2N6543 15j03 40328 npn darlington 400v 15a pnp 400v 10a 2N4296 BU326S 2N3583 2N3584 2N4297 2N4298

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I ELECTRONICS INC Ëb 26C 00224 D T-33-0\ D eT| 0DM35T5 D0D0S54 3 COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No C ase 2N5002 T0111/1 TO111/1 TO -3 TO -3 T O -3 TO 111/1 TO 111/1 TO- 2N5004 2N5067 2N5068 2N5069


    OCR Scan     		PDF T-33-0\ 0DM35T5 D0D0S54 2N5002 2N5004 2N5067 2N5068 2N5069 2N5074 2N5075

    Untitled

    Abstract: No abstract text available
    Text: NEW E N 6 L A N D SEMICONDUCTOR S'îE ]> ÜQÜDDMT NPN TO-66 077 INES lc MAX = 1-7A Vce<xsu$) = 3 5-4 00 V = .75-50 M Hz I t Case 8 0 9 T'33' o I Type No. PNP Comple­ ment VCEfl (SUS) (V) 1C (MAX) W hFI IC/VCE (min-max ® A/V) Ptt @ TC = 2 5 °C (Watts)


    OCR Scan     		PDF 5-400V T--33- 2n3054a 2n6049 2n3583 2n6211 2n3584 2n6212 2n3585 2n6213

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


    OCR Scan     		PDF OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301

    transistor 350-100

    Abstract: 40328 BU326S npn darlington 400v 15a 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427
    Text: 1 1 0 1>L T K A N X I S T O R — w ~r U o - ¡7 7 t CO INC w 34D » 1 Zfl4fl3SS 0GD0132 B «ifci - . , . i 1 j l , 3 3 - 0 9 DIODE TRd \J515T0R CD. INC. (201) 686-0400 • Telex; 139-385 • Outside NY & NJ area call TO LL FR E E 800-526-4561 FAX No. 201-575-5863


    OCR Scan     		PDF D10DL 0DD013E 2N5427 2N5428 2N542s 2N5838 2N5839 2N5840 2N3902 2N6542 transistor 350-100 40328 BU326S npn darlington 400v 15a 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427

    NPN Transistor 600V

    Abstract: 2N5466 2N5468 JAN2N3902 JAN2N5157 SDT401 SDT430
    Text: ^Jolitran IF > fö @ lü J T r © A T T M ,® < Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER FORMERLY 42 dH CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 203mm) toN2N3902, JAN2N5157, SDT401, SDT430, 2N5466, 2N5468 NPN Transistor 600V 2N5466 JAN2N3902 JAN2N5157 SDT401 SDT430

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    STI-3007

    Abstract: STI-3007 A STI3007 2N546b SE7020 2N3583 2N3584 2N3738 2N3739 2N4296
    Text: SE MICO ND UC TO R TECHNOLOGY OSE D I fl13b 4 Sfl 00□0221 1 1 SEMICONDUCTOR TECHNOLOGY, INC. ^ L l l i L y N J ; U L HIGH VOLTAGE SILICON MEDIUM POWER TRANSISTORS • -r ' w oO -n/ g 0, 0H c c , ct t J 3131 S.E. Jay Street " Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511


    OCR Scan     		PDF 313ti4SÃ 0D002E1 2N3583 2N3584 2N3585 2N3738 2N3739 STI-6006 STI-6007 STI-7006 STI-3007 STI-3007 A STI3007 2N546b SE7020 2N4296